GF1A - GF1M General Purpose Rectifiers (Glass Passivated) Features * * * * * Low Forward Voltage Drop High Current Capability Easy Pick and Place High Surge Current Capability This Device is Pb-Free and is RoHS Compliant www.onsemi.com SMA CASE 403AE (COLOR BAND DENOTES CATHODE) MARKING DIAGRAM $Y&Z&3 GF1x $Y &Z &3 GF1x x = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Specific Device Code = A/B/D/G/J/K/M ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2001 August, 2019 - Rev. 8 1 Publication Order Number: GF1A/D GF1A - GF1M ABSOLUTE MAXIMUM RATINGS TA = 25C unless otherwise noted Value Symbol Parameter 1A 1B 1D 1G 1J 1K 1M Units 50 100 200 400 600 800 1000 V VRRM Maximum Repetitive Reverse Voltage IF(AV) Average Rectified Forward Current, @ TL = 125C 1.0 A IFSM Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave 30 A Tstg Storage Temperature Range -65 to +175 C TJ Operating Junction Temperature Range -65 to +175 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol PD Parameter Value Units Power Dissipation 1.8 W RJA Thermal Resistance, Junction-to-Ambient* 80 C/W RqJL Thermal Resistance, Junction-to-Lead* 26 C/W *Device mounted on PCB with 0.2 x 0.2 (5.0 x 5.0 mm) copper pad areas. ELECTRICAL CHARACTERISTICS TA = 25C unless otherwise noted Device Symbol 1A Parameter VF Maximum Forward Voltage @ 1.0 A trr Maximum Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A IR Maximum Reverse Current @ Rated VR TA = 25C TA = 125C CT 1B 1D 1G 1.0 1J 1K 1M Units 1.2 V ms 2.0 mA 5.0 50 Typical Capacitance VR = 4.0 V, f = 1.0 MHz 15 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking GF1A GF1A GF1B GF1B GF1D GF1D GF1G GF1G GF1J GF1J GF1K GF1K GF1M GF1M Package Quantity SMA 7500 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 GF1A - GF1M 1.6 Peak Forward Surge Current, I FSM [A] Average Rectified Forward Current, I F [A] TYPICAL CHARACTERISTICS 1.4 1.2 1 RESISTIVE OR INDUCTIVE LOAD P.C.B. MOUNTED ON 0.2 x 0.2" (5.0 x 5.0 mm) COPPER PAD AREAS 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 Lead Temperature [C] 150 175 100 50 20 10 5 2 1 1 100 50 100 100 10 10 Reverse Current, I R [mA] Forward Current, I F [A] 5 10 20 Number of Cycles at 60 Hz Figure 2. Non-Repetitive Surge Current Figure 1. Forward Current Derating Curve 1 0.1 0.01 0.4 2 TA = 25 C Pulse Width = 300 mS 2% Duty Cycle 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage, V F [V] 1.8 TA = 125 C 1 0.1 TA = 75 C 0.01 TA = 25 C 0.001 2 Figure 3. Forward Voltage Characteristics 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage [%] Figure 4. Reverse Current vs. Reverse Voltage Total Capacitance, C T [pF] 100 50 20 10 5 2 1 0.01 0.1 1 10 Reverse Voltage, V R [V] Figure 5. Total Capacitance www.onsemi.com 3 100 GF1A - GF1M PACKAGE DIMENSIONS SMA CASE 403AE ISSUE O B B 5.60 4.80 0.13 M C B A 2.65 2.95 2.50 1.65 1.20 B 1.75 4.30 B A 4.75 4.00 LAND PATTERN RECOMMENDATION TOP VIEW 2.50 MAX A 2.20 1.90 B C 0.203 0.050 2.05 1.95 NOTES: 0.30 0.05 0.13 M C B SIDE VIEW 8 0 A A. EXCEPT WHERE NOTED, CONFORMS TO JEDEC DO214 VARIATION AC. B DOES NOT COMPLY JEDEC STANDARD VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DIMENSIONS AND TOLERANCE AS PER ASME Y14.5-2009. E. LAND PATTERN STD. DIOM5025X231M R0.15 4X GAGE PLANE 0.45 8 0 0.41 0.15 1.52 0.75 DETAIL A SCALE 20 : 1 www.onsemi.com 4 GF1A - GF1M ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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