MMF(U
)60R36
0P D
atasheet
Sep.
2019
Revision 1.4
MagnaChip Semi
conductor Ltd
.
1
Parameter
V
alue
Unit
V
DS
@
T
j,max
650
V
R
DS(on),max
0.36
Ω
V
TH
,typ
3
V
I
D
11
A
Q
g,typ
28
nC
Order Code
Marking
T
emp. Range
Package
Packing
RoHS Status
MMF60R
360P
TH
60R360P
-55 ~ 150
o
C
TO
-
220F
T
ube
Compliant
MMFU60R
360PTH
(1)
U60R360P
-55 ~ 150
o
C
TO
-
220F
U
T
ube
Compliant
1)
MMF
U60R
36
0PTH obtained UL
certification.
MMF
(U)60R3
60
P
600V 0.36
Ω
N-c
hannel MOSFET
Description
MMF
(U)60R360P
is power M
OSFET usi
ng Magnachi
p
’
s advanced supe
r junction te
chnology that
can realize v
ery low on-resistance and
gate char
ge. It w
ill provide much high ef
f
iciency
by using
optimized char
ge coupling technol
ogy
.
These user
friendly devi
ces give an adv
antage of Low EM
I to
designers as w
ell as low
switching loss.
Features
Low Pow
er Loss by High Speed
Switchi
ng and Low
On-Resistance
100%
Av
alanche
T
ested
Green Packa
ge
–
Pb Free Platin
g, Halogen Free
Key Parameters
Ordering Informatio
n
Applications
PFC Pow
er Supply
Stages
Switching
Applications
Adapter
D
G
S
G
D
S
Package & Internal
Circui
t
MMF(U
)60R36
0P D
atasheet
Sep.
2019
Revision 1.4
MagnaChip Semi
conductor Ltd
.
2
Parameter
Symbol
Rating
Unit
Note
Drain
–
Source vol
tage
V
DSS
600
V
Gate
–
Source vol
tage
V
GSS
±
30
V
Continuous drain
current
(2)
I
D
11
A
T
C
=25
o
C
6.95
A
T
C
=100
o
C
Pulsed drain cu
rrent
(3)
I
DM
33
A
Power dissi
pation
P
D
31
W
Single - pulse aval
anche energy
E
AS
220
mJ
Insulation wi
thstand voltage
for MM
FU6
0R
360P
(4)
V
iso
4500
V
t = 0.3sec
MOSFE
T dv/dt rugged
ness
dv/dt
50
V/ns
Diode dv
/dt ruggedness
(5)
dv/dt
15
V/ns
Storage tempera
ture
T
stg
-55 ~150
o
C
Maximum operatin
g junction
temperature
T
j
150
o
C
2)
Id limited by maximum junction temperature
3)
Pulse width t
P
limited by T
j,m
ax
4)
DC input voltage from all three leads to external heat sink.
5)
I
SD
≤
I
D
, V
DS peak
≤
V
(BR)DSS
Parameter
Symbol
V
alue
Unit
Thermal resistanc
e, junction-case max
R
thjc
4
o
C
/W
Thermal resistanc
e, junction-ambien
t max
R
thja
62.5
o
C
/W
Thermal Character
istics
Absolute Maximum
Rating (T
c
=25
o
C u
nless otherw
ise specified)
MMF(U
)60R36
0P D
atasheet
Sep.
2019
Revision 1.4
MagnaChip Semi
conductor Ltd
.
3
Parameter
Symbol
Min.
T
yp.
Max.
Unit
T
est Condition
Drain
–
Source
Breakdow
n voltage
V
(BR)D
SS
600
-
-
V
V
GS
= 0V
,
I
D
=0.25mA
Gate
Threshold V
olta
ge
V
GS
(th)
2
3
4
V
V
DS
= V
GS,
I
D
=0.25mA
Zero Gate V
oltage
Drain Current
I
D
SS
-
-
1
μ
A
V
DS
= 600V
,
V
GS
= 0V
Gate Leakage
Current
I
GSS
-
-
100
nA
V
GS
=
±3
0V
,
V
DS
=0V
Drain-Source On
State Resistance
R
DS(ON)
-
0.32
0.36
Ω
V
GS
= 10V
, I
D
=
3.8A
Parameter
Symbol
Min.
T
yp.
Max.
Unit
T
est Condition
Input Capacitance
C
iss
-
890
-
pF
V
DS
= 25V
, V
GS
= 0V
,
f = 1.0M
Hz
Output Capacitance
C
oss
-
670
-
Reverse
T
ransfer Capacitance
C
rss
-
40
-
Effectiv
e Output Capaci
tance
Energy Related
(6)
C
o(er)
-
26
-
V
DS
= 0V to 480V
,
V
GS
= 0V
,f = 1.0M
Hz
T
urn On
Delay
T
ime
t
d(on)
-
18
-
ns
V
GS
= 10V
, R
G
= 25Ω,
V
DS
= 300V
, I
D
= 1
1A
Rise
T
ime
t
r
-
40
-
T
urn O
ff Delay
Time
t
d(off)
-
80
-
Fall
T
ime
t
f
-
30
-
T
o
tal Gate Char
ge
Q
g
-
28
-
nC
V
GS
= 10V
, V
DS
= 480V
,
I
D
= 1
1A
Gate
–
Source Cha
rge
Q
gs
-
7
-
Gate
–
Drain Char
ge
Q
gd
-
10
-
Gate Resistance
R
G
-
3.5
-
Ω
V
GS
= 0V
, f = 1.0M
Hz
6)
C
o(er)
is a capacitance that gives the same stored energy as C
OSS
while V
DS
is rising from 0V to 80% V
(BR)DSS
Static Characterist
ics (T
c
=25
o
C unless otherw
ise specified)
Dynamic Characteri
stics (T
c
=25
o
C unless otherw
ise specif
ied)
MMF(U
)60R36
0P D
atasheet
Sep.
2019
Revision 1.4
MagnaChip Semi
conductor Ltd
.
4
Parameter
Symbol
Min.
T
yp.
Max.
Unit
T
est Condition
Continuous Diod
e Forward
Current
I
SD
-
-
11
A
Diode Forw
ard Voltage
V
SD
-
-
1.4
V
I
SD
= 11A, V
GS
= 0V
Reverse Recov
ery Time
t
rr
-
375
-
ns
I
SD
= 11A
di/dt = 100
A/μs
V
DD
= 100V
Reverse Recov
ery Cha
rge
Q
rr
-
4.1
-
μ
C
Reverse Recov
ery Current
I
rrm
-
21.8
-
A
Reverse Diode Ch
aracteristics (
T
c
=25
o
C unless othe
rw
ise specified)
MMF(U
)60R36
0P D
atasheet
Sep.
2019
Revision 1.4
MagnaChip Semi
conductor Ltd
.
5
Characteristic Gra
ph
MMF(U
)60R36
0P D
atasheet
Sep.
2019
Revision 1.4
MagnaChip Semi
conductor Ltd
.
6
MMF(U
)60R36
0P D
atasheet
Sep.
2019
Revision 1.4
MagnaChip Semi
conductor Ltd
.
7
MMF(U
)60R36
0P D
atasheet
Sep.
2019
Revision 1.4
MagnaChip Semi
conductor Ltd
.
8
T
est Circuit
MMF(U
)60R36
0P D
atasheet
Sep.
2019
Revision 1.4
MagnaChip Semi
conductor Ltd
.
9
Physical Dimension
TO
-
220F
(U)-
3L
Dimensions are in mil
limeters unless
otherwise specified
[Unit:
mm]
Note : Package body size, length and width do not include mold flash, protrusions and gate burrs
MMF(U
)60R36
0P D
atasheet
Sep.
2019
Revision 1.4
MagnaChip Semi
conductor Ltd
.
10
DISCLAIMER:
The
Prod
ucts
are
not
d
esigned
for
use
i
n
hostile
environments,
including,
without
limitation,
aircraft,
nuclear
power
generation,
medical
appliance
s,
and
devices
or
systems
in
which
malfunc
tion
of
any
Product
can
reasonably
be
expected
to
result
in
a
personal
injury.
Seller’s
customers
using
or
selling
Seller’s
products
for
use
in
such
applications do so at their own risk and agree to fully defend and indemnify
Seller.
MagnaC
hip reserves
the
right
to change
the s
pecification
s
and circuitry without
notice
at any
time.
Ma
gnaChip does
not c
onsider responsibility
for use
of any circuitry other than circuitry entirely included in
a MagnaChip product.
,
are
registered trademar
k
of MagnaCh
ip
Semiconductor
Ltd.
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