MMF(U)60R360P Datasheet
Sep. 2019 Revision 1.4 MagnaChip Semiconductor Ltd.
1
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
0.36
VTH,typ
3
V
ID
11
A
Qg,typ
28
nC
Order Code
Marking
Temp. Range
Package
RoHS Status
MMF60R360PTH
60R360P
-55 ~ 150oC
TO-220F
Compliant
MMFU60R360PTH(1)
U60R360P
-55 ~ 150oC
TO-220FU
Compliant
1) MMFU60R360PTH obtained UL certification.
MMF(U)60R360P
600V 0.36 N-channel MOSFET
Description
MMF(U)60R360P is power MOSFET using Magnachips advanced super junction technology that
can realize very low on-resistance and gate charge. It will provide much high efficiency by using
optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to
designers as well as low switching loss.
Features
Low Power Loss by High Speed Switching and Low On-Resistance
100% Avalanche Tested
Green Package Pb Free Plating, Halogen Free
Key Parameters
Ordering Information
Applications
PFC Power Supply Stages
Switching Applications
Adapter
D
G
S
G
D
S
Package & Internal Circuit
MMF(U)60R360P Datasheet
Sep. 2019 Revision 1.4 MagnaChip Semiconductor Ltd.
2
Parameter
Symbol
Rating
Unit
Note
Drain Source voltage
VDSS
600
V
Gate Source voltage
VGSS
±30
V
Continuous drain current(2)
ID
11
A
TC=25oC
6.95
A
TC=100oC
Pulsed drain current(3)
IDM
33
A
Power dissipation
PD
31
W
Single - pulse avalanche energy
EAS
220
mJ
Insulation withstand voltage
for MMFU60R360P (4)
Viso
4500
V
t = 0.3sec
MOSFET dv/dt ruggedness
dv/dt
50
V/ns
Diode dv/dt ruggedness(5)
dv/dt
15
V/ns
Storage temperature
Tstg
-55 ~150
oC
Maximum operating junction
temperature
Tj
150
oC
2) Id limited by maximum junction temperature
3) Pulse width tP limited by Tj,max
4) DC input voltage from all three leads to external heat sink.
5) ISD ID, VDS peak V(BR)DSS
Parameter
Symbol
Value
Unit
Thermal resistance, junction-case max
Rthjc
4
oC/W
Thermal resistance, junction-ambient max
Rthja
62.5
oC/W
Thermal Characteristics
Absolute Maximum Rating (Tc=25oC unless otherwise specified)
MMF(U)60R360P Datasheet
Sep. 2019 Revision 1.4 MagnaChip Semiconductor Ltd.
3
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Condition
Drain Source
Breakdown voltage
V(BR)DSS
600
-
-
V
VGS = 0V, ID=0.25mA
Gate Threshold Voltage
VGS(th)
2
3
4
V
VDS = VGS, ID=0.25mA
Zero Gate Voltage
Drain Current
IDSS
-
-
1
μA
VDS = 600V, VGS = 0V
Gate Leakage Current
IGSS
-
-
100
nA
VGS = ±30V, VDS =0V
Drain-Source On
State Resistance
RDS(ON)
-
0.32
0.36
VGS = 10V, ID = 3.8A
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Condition
Input Capacitance
Ciss
-
890
-
pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
-
670
-
Reverse Transfer Capacitance
Crss
-
40
-
Effective Output Capacitance
Energy Related (6)
Co(er)
-
26
-
VDS = 0V to 480V,
VGS = 0V,f = 1.0MHz
Turn On Delay Time
td(on)
-
18
-
ns
VGS = 10V, RG = 25Ω,
VDS = 300V, ID = 11A
Rise Time
tr
-
40
-
Turn Off Delay Time
td(off)
-
80
-
Fall Time
tf
-
30
-
Total Gate Charge
Qg
-
28
-
nC
VGS = 10V, VDS = 480V,
ID = 11A
Gate Source Charge
Qgs
-
7
-
Gate Drain Charge
Qgd
-
10
-
Gate Resistance
RG
-
3.5
-
VGS = 0V, f = 1.0MHz
6) Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS
Static Characteristics (Tc=25oC unless otherwise specified)
Dynamic Characteristics (Tc=25oC unless otherwise specified)
MMF(U)60R360P Datasheet
Sep. 2019 Revision 1.4 MagnaChip Semiconductor Ltd.
4
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Condition
Continuous Diode Forward
Current
ISD
-
-
11
A
Diode Forward Voltage
VSD
-
-
1.4
V
ISD = 11A, VGS = 0V
Reverse Recovery Time
trr
-
375
-
ns
ISD = 11A
di/dt = 100A/μs
VDD = 100V
Reverse Recovery Charge
Qrr
-
4.1
-
μC
Reverse Recovery Current
Irrm
-
21.8
-
A
Reverse Diode Characteristics (Tc=25oC unless otherwise specified)
MMF(U)60R360P Datasheet
Sep. 2019 Revision 1.4 MagnaChip Semiconductor Ltd.
5
Characteristic Graph
MMF(U)60R360P Datasheet
Sep. 2019 Revision 1.4 MagnaChip Semiconductor Ltd.
6
MMF(U)60R360P Datasheet
Sep. 2019 Revision 1.4 MagnaChip Semiconductor Ltd.
7
MMF(U)60R360P Datasheet
Sep. 2019 Revision 1.4 MagnaChip Semiconductor Ltd.
8
Test Circuit
MMF(U)60R360P Datasheet
Sep. 2019 Revision 1.4 MagnaChip Semiconductor Ltd.
9
Physical Dimension
TO-220F(U)-3L
Dimensions are in millimeters unless otherwise specified
[Unit: mm]
Note : Package body size, length and width do not include mold flash, protrusions and gate burrs
MMF(U)60R360P Datasheet
Sep. 2019 Revision 1.4 MagnaChip Semiconductor Ltd.
10
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. , are registered trademark of MagnaChip
Semiconductor Ltd.