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Customer Support Dept.
April 1, 2003
To all our customers
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
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Remember to give due consideration to safety when making your circuit designs, with appropriate
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Notes regar ding these materials
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2SK1315(L)(S), 2SK1316(L)(S)
Silicon N-Channel MOS FET
ADE-208-1267 (Z)
1st. Edition
Mar. 2001
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, DC-DC converter and motor driver
Outline
3
2
1
4
3
2
1
4
LDPAK
1. Gate
2. Drain
3. Source
4. Drain
D
G
S
2SK1315(L)(S), 2SK1316(L)(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage 2SK1315 VDSS 450 V
2SK1316 500
Gate to source voltage VGSS ±30 V
Drain current ID8A
Drain peak current ID(pulse)*132 A
Body to drain diode reverse drain current IDR 8A
Channel dissipation Pch*260 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
2SK1315(L)(S), 2SK1316(L)(S)
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source 2SK1315 V(BR)DSS 450 V ID = 10 mA, VGS = 0
breakdown voltage 2SK1316 500
Gate to source breakdown
voltage V(BR)GSS ±30——V I
G = ±100 µA, VDS = 0
Gate to source leak current IGSS ——±10 µAV
GS = ±25 V, VDS = 0
Zero gate voltage 2SK1315 IDSS 250 µAV
DS = 360 V, VGS = 0
drain current 2SK1316 VDS = 400 V, VGS = 0
Gate to source cutoff voltage VGS(off) 2.0 3.0 V ID = 1 mA, VDS = 10 V
Static Drain to source 2SK1315 RDS(on) 0.55 0.7 ID = 4 A, VGS = 10 V *1
on state resistance 2SK1316 0.60 0.8
Forward transfer admittance |yfs| 4.5 7.5 S ID = 4 A, VDS = 10 V *1
Input capacitance Ciss 1150 pF VDS = 10 V, VGS = 0,
Output capacitance Coss 340 pF f = 1 MHz
Reverse transfer capacitance Crss 55 pF
Turn-on delay time td(on) 17 ns ID = 4 A, VGS = 10 V,
Rise time tr 55 ns RL = 7.5
Turn-off delay time td(off) 100 ns
Fall time tf—45—ns
Body to drain diode forward
voltage VDF 0.9 V IF = 8 A, VGS = 0
Body to drain diode reverse
recovery time trr 350 ns IF = 8 A, VGS = 0,
diF/dt = 100 A/µs
Note: 1. Pulse test
See characteristic curves of 2SK1159, 2SK1160.
2SK1315(L)(S), 2SK1316(L)(S)
4
60
40
20
0 50 100 150
Case Temperature TC (°C)
Channel Dissipation Pch (W)
Power vs. Temperature Derating
2SK1315(L)(S), 2SK1316(L)(S)
5
Package Dimensions
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
LDPAK (L)
1.4 g
10.2 ± 0.3
0.86
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
+ 0.2
– 0.1
1.2 ± 0.2
4.44 ± 0.2
1.3 ± 0.15
2.59 ± 0.2
0.4 ± 0.1
11.0 ± 0.5
8.6 ± 0.3
10.0
11.3 ± 0.5
+ 0.3
– 0.5
(1.4)
1.27 ± 0.2
As of January, 2001
Unit: mm
2SK1315(L)(S), 2SK1316(L)(S)
6
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
LDPAK (S)-(1)
1.3 g
10.2 ± 0.3
1.27 ± 0.2
(1.5)
(1.4)
8.6 ± 0.3
10.0 + 0.3
– 0.5
4.44 ± 0.21.3 ± 0.15
0.1 + 0.2
– 0.1
0.4 ± 0.1
0.86 + 0.2
– 0.1
2.54 ± 0.5
2.54 ± 0.5
1.2 ± 0.2
3.0+ 0.3
– 0.5
(1.5)
7.8
6.6
2.2
1.7
7.8
7.0
As of January, 2001
Unit: mm
2SK1315(L)(S), 2SK1316(L)(S)
7
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
LDPAK (S)-(2)
1.35 g
10.2 ± 0.3
1.27 ± 0.2
(1.5)
(1.4)
8.6 ± 0.3
10.0 + 0.3
– 0.5
4.44 ± 0.21.3 ± 0.2
0.1 + 0.2
– 0.1
0.4 ± 0.1
0.86 + 0.2
– 0.1
2.54 ± 0.5
2.54 ± 0.5
1.2 ± 0.2
5.0+ 0.3
– 0.5
(1.5)
7.8
6.6
2.2
1.7
7.8
7.0
As of January, 2001
Unit: mm
2SK1315(L)(S), 2SK1316(L)(S)
8
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
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