SILICON RECTIFIER DIODE 1A/100~600V EC10DS1 EC1ODS2 EC10DS4 EC10DS6 FEATURES Miniature Size, High Surge Capability e Low Forwar@g Voltage Drop Low Reverse Leakage Current Surface Mount Device Packaged in 12mm Tape and Reel e Not Rolling During Assembly MAXIMUM RATINGS Presa oo 1.5.059) 0.0025) 20MIN cir 4.70 1a5r AT 18e0 Prac] 20g td 2 2c U8T) LSCOT Ts 7 TEMG) 31.091) -t ays 151 0599 Forno Dimensions in mm (Inches) OZcuray acon) [T+ BTU u6T) T3cen Ltt SOLDERLING PAD Wate Approx. Net Weight: 0.06 Grams TYPE Voltage Rating symbo? ECLODS1 EC10DS2 EC10DS4 EC1ODS6 | Unit Repetitive Peak v Reverse Voltage RRM 100 200 400 600 v Non-Repetitive Peak Vv -_ Reverse Voltage RSM 250 400 600 Vv Electrical Rating Symbol Condition Rating Unit ' | 180 sinusoidal wave conduction . Ceramic substrate mounted * 1.0 Average Rectified I Ta = 25C A Output Current 180 sinusoidal wave conduction Glass-Epoxy substrate mounted * 0.74 ee Fa 288 | RMS Forward Current TecRMs) 1.57 A Peak One-cycle Forward I 50Hz half sine wave, 25 Surge Current FSM non-repetitive A Operating Frequency 1,000 Hz Operating Junction qT. Temperature Range Jw ~40 to 150 c Storage Temperature Range Totg ~40 to 150 C ELECTRICAL & THERMAL CHARACTERISTICS Characteristics Symbol Test Condition Max. Unit | Peak Forward Vottage [FM | Tem = 1:08 Ti = 25C tt Y Peak Reverse Current Ipm Vrm = Yrrm 73 = 25C 10 uA Thermal Resistance, Ceramic substrate mounted * 108 junction to ambient Beh (ra) [mmm ro em C/W Glass-Epoxy substrate mounted * 157 * Substrate Soldering Land = 2x 2mm (GUD Non inter Bectronics Corporation 596 FIG.1-FORWARD VOLTAGE VS. FORWARD CURRENT 10 10ms SINE 0.5 INSTANTANEOUS FORWARD CURRENT (A) o.1 Q 0.4 0.8 1.2 1.6 1 INSTANTANEOUS FORWARD VOLTAGE (V) FIG.4- AVERAGE FORWARD CURRENT VS. AMBIENT TEMPERATURE AVERAGE FORWARD CURRENT (A) 25 50. 150 AMBIENT TEMPERATURE (C? AVERAGE FORWARD POWER DISSIPATION (W) eS S S For Bp fe eos & 8 & & & nw 9 EP ee 2 S$ SB F FR SURGE FORWARD CURRENT (A) o FIG.2- AVERAGE FORWARD POWER DISSIPATION AVERAGE FORWARD CURRENT (A) EC10DS1 EC10DS2 EC1ODS4 EC1ODS6 FIG.3- FIG.5-AVERAGE FORWARD CURRENT VS. AMBIENT TEMPERATURE w o GLASS-EPOKY AVERAGE FORWARD CURRENT (A) o 9 9 9S & SG Bow SB BD F NY w& & oO 0.4 0.8 1.2 1.6 5000 (75 100-125 156 AMBIENT IEMPERATURE (C) FIG.S-AVERAGE FORWARD CURRENT VS. AMBIENT TEMPERATURE lesn S0Hz SINE WAVE Ta = 40C 9.95 O01 0.2 0.5 1 2 PULSE DURATION (SEC) 597 (uF Non Inter Bectronics Corporation