NTE133 N-Channel JFET Silicon Transistor General Purpose AF Amplifier Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Drain-Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Drain-Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25V Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Lead Temperature (During Soldering, 1/16" from case for 10sec), TL . . . . . . . . . . . . . . . . . . . +260C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Min Typ Max Unit -25 - - V VGS = 20V, VDS = 0 - - -1 nA VGS = 20V, VDS = 0, TA = +150C - - -1 A VGS(off) ID = 1A, VDS = 15V - - -6.5 V Gate-Source Voltage VGS ID = 50A, VDS = 15V -0.4 - -6.0 V Zero-Gate-Voltage Drain Current IDSS VDS = 15V, VGS = 0 0.5 - 15 mA Forward Transfer Admittance |yfs| VDS = 15V, VGS = 0, f = 1kHz 1000 - 7500 mho Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage Symbol Test Conditions V(BR)GSS IG = 1A, VDS = 0 IGSS .207 (5.28) Dia .060 (1.52) Min .180 (4.57) .500 (12.7) Min Seating Plane .018 (0.45) .100 (2.54) Dia Drain Source Gate