NTE133
N–Channel JFET Silicon Transistor
General Purpose AF Amplifier
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Drain–Source Voltage, VDS 25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain–Gate Voltage, VDG 25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate–Source Voltage, VGS –25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current, IG10mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (TA = +25°C), PD300mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 2mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/16” from case for 10sec), TL+260°C. . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Gate–Source Breakdown Voltage V(BR)GSS IG = 1µA, VDS = 0 –25 – – V
Gate Reverse Current IGSS VGS = 20V, VDS = 0 – – –1 nA
VGS = 20V, VDS = 0, TA = +150°C – – –1 µA
Gate–Source Cutoff Voltage VGS(off) ID = 1µA, VDS = 15V – – –6.5 V
Gate–Source Voltage VGS ID = 50µA, VDS = 15V –0.4 – –6.0 V
Zero–Gate–Voltage Drain Current IDSS VDS = 15V, VGS = 0 0.5 – 15 mA
Forward Transfer Admittance |yfs| VDS = 15V, VGS = 0, f = 1kHz 1000 – 7500 µmho
.207 (5.28) Dia
.018 (0.45)
.100 (2.54) Dia
Source
Drain
Gate
.180
(4.57)
.500
(12.7)
Min
.060
(1.52)
Min
Seating
Plane
