©2000 Fairchild Semiconductor International Rev. A, February 2000
BD239/A/B/C
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW=350µs, duty Cycle2.0% Pulsed
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage: BD23 9
: BD239A
: BD239B
: BD239C
45
60
80
100
V
V
V
V
VCER Collector-Emitter Voltage: BD23 9
: BD239A
: BD239B
: BD239C
55
70
90
115
V
V
V
V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 2 A
ICP *Collector Current (Pulse) 4 A
IB Base Current 0.6 A
PC Collector Dissipation (TC=25°C) 30 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Co ndition Min. Typ. Max. Units
VCEO(sus) *Collector-Emitter Sustaining V oltage
: BD239
: BD239A
: BD239B
: BD239C
IC = 30mA , IB = 0
45
60
80
100
V
V
V
V
ICEO Collector Cut-off Current: BD239/A
: BD239 B /C
VCE = 30V, IB = 0
VCE = 60V, IB = 0 0.3
0.3 mA
mA
ICES Collector Cut-off Current : BD239
: BD239A
: BD239B
: BD239C
VCE = 45V, VBE = 0
VCE = 60V, VBE = 0
VCE = 80V, VBE = 0
VCE = 100V, VBE = 0
0.2
0.2
0.2
0.2
mA
mA
mA
mA
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 1 mA
hFE *DC Current Gain VCE = 4V, IC = 0.2A
VCE = 4V, IC = 1A 40
15
VCE(sat) *Collector-Emitter Saturation Voltage IC = 1A, IB = 0.2A 0.7 V
VBE(on) *Base-Emitter ON Voltage VCE = 4V, IC = 1A 1.3 V
BD239/A/B/C
Medium Power Linear and Switching
Applications
Complement to BD240/A/B/C respectively
1.Base 2.Collector 3.Emitter
1TO-220
4.50
±0.20
9.90
±0.20
1.52
±0.10
0.80
±0.10
2.40
±0.20
10.00
±0.20
1.27
±0.10
ø3.60
±0.10
(8.70)
2.80
±0.10
15.90
±0.20
10.08
±0.30
18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20
±0.20
13.08
±0.20
1.30
±0.10
1.30
+0.10
–0.05
0.50
+0.10
–0.05
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
TO-220
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
BD239/A/B/C
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. E
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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The datasheet is printed for reference information only.
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