S10226 - Hamamatsu Photonics K.K.

Features

Compact and high cost-performance

Surface mount package: 2.4 × 9.1 × 1.6

Pixel pitch: 7.8 µm

Pixel height: 125 µm

Number of pixels: 1024 ch

Single 3.3 V power supply operation available

High sensitivity, low dark current, low noise

On-chip charge amplifier with excellent input/output

characteristics

Built-in timing generator allows operation with only

Start and Clock pulse inputs

Video data rate: 200 kHz Max.

Spectral response range: 400 to 1000 nm

Note: Consult with the nearest sales office if an evaluation

board is needed.

Applications

Barcode readers

Displacement meters

Refractometers

Interferometers

Miniature spectrometers

IMAGE SENSOR

Small plastic package CMOS image sensor

CMOS linear image sensor

S10226

■ Absolute maximum ratings (Ta=25 °C)

Parameter Symbol Value Unit

Supply voltage Vdd -0.3 to +6 V

Gain selection terminal voltage Vg -0.3 to +6 V

Clock pulse voltage V (CLK) -0.3 to +6 V

Start pulse voltage V (ST) -0.3 to +6 V

Operating temperature *1Topr -25 to +85 °C

Storage temperature Ts t g -25 to +85 °C

*1: No condensation

■ Dimensions

Parameter Value Unit

Number of pixels 1024 -

Pixel pitch 7.8 µm

Pixel height 125 µm

Active area length 7.9872 mm

CMOS linear image sensor

S10226

■ Recommended terminal voltage

Parameter Symbol Min. Typ. Max. Unit

Supply voltage Vdd 3.3 5 5.25 V

High gain - 0 - V

Gain selection

terminal voltage Low gain Vg Vdd-0.25 Vdd Vdd+0.25 V

High Vdd-0.25 Vdd Vdd+0.25 V

Clock pulse voltage Low V (CLK) -0-V

High Vdd-0.25 Vdd Vdd+0.25 V

Start pulse voltage Low V (ST) - 0 - V

■ Electrical characteristics [Ta=25 °C, Vdd=5 V, V (CLK)=V (ST)=5 V]

Parameter Symbol Min. Typ. Max. Unit

Clock pulse frequency f (CLK) 100 - 800 kHz

Video data rate VR -f (CLK)/4 -kHz

■ Electrical and optical characteristics [Ta=25 °C, Vdd=5 V, V (CLK)=V (ST)=5 V]

Parameter Symbol Min. Typ. Max. Unit

Spectral response range λ400 to 1000 nm

Peak sensitivity wavelength λp-700 -nm

Current consumption IDD -5-mA

High gain -0.6 6

Dark output voltage *2

Low gain Vd -0.3 3mV

Saturation output voltage Vsat - 3.0 - V

High gain -0.6 -

Readout noise Low gain Nr -0.3 -mV rms

Offset output voltage Vo 0.4 - V

Photo response non-uniformity *3 *4PRNU - - ±8.5 %

*2: Storage time Ts=10 ms

*3: Uniformity is defined under the condition that all pixels in the device are uniformly illuminated by light which is 50 % of the

saturation exposure level and using 1022 pixels excluding both ends pixels as follows:

PRNU=

∆X/X × 100 (%)

X: Average output of 1022 pixels excluding the pixels at both ends

∆X: Difference between X and maximum or minimum output

*4: Measured with a tungsten lamp of 2856 K

■ Block diagram

KMPDC0165EC

CLK

TIMING GENERATOR

1234510231024

PHOTODIODE ARRAY

ST Trig GND Vdd EOS Vg

Video

SHIFT REGISTER

ADDRESS SWITCH

CHARGE

AMP

CLAMP

CIRCUIT

■ Spectral response (Typical example)

200 300 500400 600 700 900800 100011001200

WAVELENGTH (nm)

100

RELATIVE SENSITIVITY (%)

(Ta=25 ˚C)

KMPDB0258EB

CMOS linear image sensor

S10226

■ Configuration

S10226 consists of a photosensitive area made up of a 1024 pixel photodiode array, address switches for photodiode signal

readout, a shift register for controlling the address switches, a charge amplifier for integrating charging current, a timing circuit for

generating various timings, and a bias circuit. (See equivalent circuit below.)

Each address switch is comprised of an N-channel MOS transistor using the photodiode cathode as the source, the charge

amplifier input end as the drain, and the address pulse input from the shift register as the gate.

Signal readout method

S10226 uses a charge integration method that temporarily accumulates a photoelectrically-converted charge in the junction

capacitance of each pixel. While the output in real-time readout is proportional only to the light intensity, the output in charge

integration is proportional to the product (amount of exposure) of the light intensity and integration time. So the output from charge

integration can be increased by lengthening the integration time, which makes charge integration ideal for low-light-level

detection.

Readout by charge integration

In charge integration, a photoelectrically-converted charge is temporarily accumulated in the junction capacitance of each pixel.

The integration capacitance of the charge amplifier is discharged by a reset signal from the timing generator circuit immediately

before each address switch is turned on. The charge stored in the junction capacitance of each pixel is then input to the charge

amplifier by sequentially turning on the address switch connected to each pixel. At this point, each pixel is initialized.

The output voltage *5 of the charge amplifier is then output as a positive-going integrated waveform from the Video terminal

through the CDS circuit and the next-stage buffer amplifier circuit. Finally, an EOS (End-Of-Scan) signal is output after the last

pixel signal was output.

*5: This is proportional to the amount of exposure. Output response depends on DTC (Discharge Time Constant).

■ Dark voltage output vs.

temperature

-40 -20 20040

60 80 100

TEMPERATURE (˚C)

0.001

0.01

0.1

100

DARK VOLTAGE OUTPUT (mV)

(Typ., Vdd=5 V, Integration time 10 ms)

HIGH GAIN

LOW GAIN

KMPDB0259EA

■ Current consumption vs.

temperature

-40 -20 20040

60 80 100

TEMPERATURE (˚C)

3.0

5.0

4.5

4.0

3.5

CURRENT CONSUMPTION (mA)

(Typ. Vdd=5 V, dark state)

LOW GAIN

HIGH GAIN

KMPDB0260EA

■ Output voltage vs.

ambient

temperature

-50 0 50 100

AMBIENT TEMPERATURE (˚C)

200

400

600

800

1000

1200

1400

1600

OUTPUT VOLTAGE (mV)

(Typ.)

HIGH GAIN

LOW GAIN

KMPDB0267EA

START TRIGGER

VIDEO

GAINGND

Vdd

DIGITAL SHIFT REGISTER END OF

SCAN

CLOCK

KMPDC0250EA

CMOS linear image sensor

S10226

■ Timing chart

CLK

Video

Trig

EOS

CLK

Video

KMPDC0164EB

tr (CLK) tf (CLK)

tpw (CLK)

tr (ST) tf (ST)

tvd

thw (ST), INTEGRATION TIME

KMPDC0164EB

Parameter Symbol Min. Typ. Max. Unit

Start pulse high time thw (ST) T1 × 4102 - - µs

Start pulse rise and fall time tr (ST), tf (ST) 0 20 30 ns

Clock pulse width tpw (CLK), T1 1.25 - 10 µs

Clock pulse rise and fall time tr (CLK), tf (CLK) 0 20 30 ns

Video delay time tvd - 20 - ns

Note: The CLK pulse should be set from high to low just once when the ST pulse is low. The internal shift register starts

operating at this timing.

The storage time is determined by the start pulse intervals. However, since the charge storage of each pixel is carried out

between the signal readout of that pixel and the next signal readout of the same pixel, the start time of charge storage

differs depending on each pixel. In addition, the next start pulse cannot be input until signal readout from all pixels is

completed.

■ Dimensional outline (unit: mm)

KMPDA0211EA

1.6 ± 0.2

(0.9)

0.3 ± 0.15

1.44

1.9 1.93.4

EPOXY RESIN

PHOTOSENSITIVE

SURFACE

PRINT CIRCUIT BOARD

Tolerance unless

otherwise noted: ±0.1

GND

Trig

CLK

EOS

Vdd

Video

ELECTRODES

(8 ×) 0.5 INDEX MARK

ACTIVE AREA

7.9872 × 0.125

2.4

0.8 ± 0.2

1024 CH

9.1

4.55 ± 0.2

1 CH

CMOS linear image sensor

S10226

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658

France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.

Cat. No. KMPD1097E07

Oct. 2008 DN 5

■ Pin connection

Pin No. Name Description Input/output

➀Vg Gain selection: Low gain → Vdd or open, High gain → GND Input

➁GND Ground Input

➂Trig Trigger: Timing signal output for A/D converter Output

➃CLK Clock pulse (Pulse for synchronizing the internally generated pulses that

control sensor operation frequency) Input

➄ST Start pulse (Pulse for initializing the internally generated pulses that set the

timing to start reading pixel signals) Input

➅EOS End of scan (Shift register end-of-scan signal pulse generated after reading

signals from all pixels) Output

➆Vdd Power supply voltage Input

➇Video Video signal output Output

■ Precautions for use

(1) Electrostatic countermeasures

· This device has a built-in protection circuit as a safeguard against static electrical charges. However, to prevent destroying

the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent

static discharges.

· Protect this device from surge voltages which might be caused by peripheral equipment.

(2) Package handling

· The package surface is easily scratched, so handle this device carefully.

· Dust or grime on the light input window might cause non-uniform sensitivity. To remove dust or grime, blow it off with

compressed air.

(3) Reflow soldering

· To prevent damaging this device during reflow soldering, perform soldering within 24 hours after opening the moisture-proof

packing.

· The extent of damage that might occur during reflow soldering depends on the PC board size and reflow oven conditions.

Check the device for any damage before reflow soldering.

(4) Surface protective tape

· Protective tape is affixed to the surface of this product to protect the active area. After assembling the product, remove the

tape before use.

1.9 1.93.4

(8 ×) 0.7

1.44

KMPDC0248EB

0 50 150100 200 250 300 350

TIME (s)

250

200

150

100

TEMPERATURE (˚C)

■ Recommended land pattern ■ Temperature profile of reflow soldering

KMPDB0261EA