IRF9540, RF1S9540SM Data Sheet 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly Developmental Type TA17521. Ordering Information PART NUMBER PACKAGE July 1999 File Number 2282.6 Features * 19A, 100V * rDS(ON) = 0.200 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol BRAND IRF9540 TO-220AB IRF9540 RF1S9540SM TO-263AB RF1S9540 D G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., RF1S9540SM9A. S Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN (FLANGE) DRAIN (FLANGE) GATE SOURCE 4-15 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 IRF9540, RF1S9540SM TC = 25oC, Unless Otherwise Specified Absolute Maximum Ratings Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg IRF9540, RF1S9540SM -100 -100 -19 -12 -76 20 150 1 960 -55 to 175 UNITS V V A A A V W W/oC mJ oC 300 260 oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS V Drain to Source Breakdown Voltage BVDSS ID = -250A, VGS = 0V (Figure 10) -100 - - Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = -250A -2 - -4 V VDS = Rated BVDSS, VGS = 0V - - -25 A A Zero Gate Voltage Drain Current IDSS VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC On-State Drain Current (Note 2) ID(ON) Gate to Source Leakage Current IGSS Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time rDS(ON) gfs td(ON) Rise Time tr Turn-Off Delay Time td(OFF) Fall Time - - -250 -19 - - A - - 100 nA ID = -10A, VGS = -10V (Figures 8, 9) - 0.150 0.200 VDS > ID(ON) x rDS(ON) MAX, ID = -6A (Figure 12) 5 7 - S VDD = -50V, ID 19A, RG = 9.1, RL = 2.3, VGS = -10V, (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature - 16 20 ns - 65 100 ns - 47 70 ns - 28 70 ns VGS = -10V, ID = -19A, VDS = 0.8 x Rated BVDSS, Ig(REF) = -1.5mA (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature - 70 90 nC - 14 - nC - 56 - nC VDS = -25V, VGS = 0V, f = 1MHz (Figure 11) - 1100 - pF - 550 - pF - 250 - pF - 3.5 - nH - 4.5 - nH - 7.5 - nH - - 1 oC/W - - 62.5 oC/W VDS > ID(ON) x rDS(ON) MAX, VGS = -10V VGS = 20V tf Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Qg(TOT) Qgs Gate to Drain "Miller" Charge Qgd Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Internal Drain Inductance LD Measured From the Contact Screw on Tab to the Center of Die Measured From the Drain Lead, 6mm (0.25in) from Package to the Center of Die Internal Source Inductance LS Thermal Resistance Junction to Case RJC Thermal Resistance Junction to Ambient RJA 4-16 Measured From the Source Lead, 6mm (0.25in) From Package to Source Bonding Pad Typical Socket Mount Modified MOSFET Symbol Showing the Internal Devices Inductances D LD G LS S IRF9540, RF1S9540SM Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode MIN TYP MAX - - -19 UNITS A - - -76 A - - -1.5 V - 170 - ns - 0.8 - C D G S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time VSD trr Reverse Recovery Charge QRR TC = 25oC, ISD = -19A, VGS = 0V (Figure 13) TJ = 150oC, ISD = 19A, dISD/dt = 100A/s TJ = 150oC, ISD = 19A, dISD/dt = 100A/s NOTES: 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 25V, starting TJ = 25oC, L = 4mH, RG = 25, peak IAS = 19A. (Figures 15, 16). Unless Otherwise Specified -20 1.0 -20 ID, DRAIN CURRENT (A) 1.2 0.8 0.6 0.4 0.2 0 25 0 125 50 75 100 TC , CASE TEMPERATURE (oC) 150 175 -15 -10 -5 0 25 75 125 175 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 1 ZJC, TRANSIENT THERMAL IMPEDANCE (oC/W) POWER DISSIPATION MULTIPLIER Typical Performance Curves 0.5 0.2 0.1 PDM 0.1 0.05 t1 0.02 0.01 0.01 10-5 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x RJC + TC SINGLE PULSE 10-4 10-3 10-2 10-1 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 4-17 1 10 IRF9540, RF1S9540SM Typical Performance Curves Unless Otherwise Specified (Continued) 200 -100 VGS = -16V 10s 100s ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 1ms 10 10ms 100ms OPERATION IN THIS AREA IS LIMITED BY rDS(ON) 1 DC TC = 25oC TJ = MAX RATED 0.1 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX -80 VGS = -12V -60 VGS = -10V -40 VGS = -9V VGS = -8V -20 VGS = -5V SINGLE PULSE 1 0 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 500 0 VGS = -12V -40 VGS = -10V VGS = -9V -30 VGS = -8V -20 VGS = -7V VGS = -6V -10 0 0 -2 VGS = -5V VGS = -4V -6 -8 -4 -10 -100 -1 TJ = 25oC TJ = -55oC -0.1 0 -2 0.14 0.10 -40 -60 ID, DRAIN CURRENT (A) -80 -100 NOTE: Heating effect of 2s pulse is minimal. FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 4-18 -14 2.0 NORMALIZED DRAIN TO SOURCE ON RESISTANCE RESISTANCE () rDS(ON), DRAIN TO SOURCE ON VGS = -20V -20 -4 -6 -8 -10 -12 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 7. TRANSFER CHARACTERISTICS VGS = -10V 0 -50 TJ = 125oC PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 0.18 VGS = -4V -40 -10 FIGURE 6. SATURATION CHARACTERISTICS 0.22 -30 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS, DRAIN TO SOURCE VOLTAGE (V) 0.26 -20 FIGURE 5. OUTPUT CHARACTERISTICS IDS(ON), DRAIN TO SOURCE CURRENT (A) ID, DRAIN CURRENT (A) VGS = -16V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = -14V -10 VGS = -7V VGS = -6V VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA -50 VGS = -14V 1.5 VGS = -10V, ID = 10A PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 1.0 0.5 0.2 -40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC) FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 160 IRF9540, RF1S9540SM Typical Performance Curves Unless Otherwise Specified (Continued) 2000 1.15 1.05 0.95 0.85 CISS 1200 800 COSS 400 CRSS 0 0.75 -40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC) -10 0 160 -30 -20 -50 -40 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 15 100 12 ISD, SOURCE TO DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TJ = -55oC 9 TJ = 25oC TJ = 125oC 6 3 0 -20 -60 -40 ID, DRAIN CURRENT (A) -80 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TJ = 150oC TJ = 25oC 10 1 0.1 0.4 0 -100 0.6 0.8 ID = -19A -5 VDS = -20V VDS = -50V VDS = -80V 0 20 40 60 Qg(TOT) , GATE CHARGE (nC) 80 FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 4-19 1.2 1.4 1.6 FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE 0 -10 1.0 VSD, SOURCE TO DRAIN VOLTAGE (V) FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT VGS, GATE TO SOURCE (V) gfs, TRANSCONDUCTANCE (S) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD 1600 C, CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250A 1.8 IRF9540, RF1S9540SM Test Circuits and Waveforms VDS tAV L 0 VARY tP TO OBTAIN - RG REQUIRED PEAK IAS + VDD DUT 0V VDD tP VGS IAS IAS VDS tP 0.01 BVDSS FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(OFF) td(ON) tr 0 RL - DUT VGS + 10% 10% VDS VDD RG tf 90% 90% VGS 0 10% 50% 50% PULSE WIDTH 90% FIGURE 17. SWITCHING TIME TEST CIRCUIT -VDS (ISOLATED SUPPLY) CURRENT REGULATOR FIGURE 18. RESISTIVE SWITCHING WAVEFORMS 0 VDS DUT 12V BATTERY 0.2F 50k 0.3F Qgs Qg(TOT) DUT G VGS Qgd D VDD 0 S Ig(REF) IG CURRENT SAMPLING RESISTOR 0 +VDS ID CURRENT SAMPLING RESISTOR FIGURE 19. GATE CHARGE TEST CIRCUIT 4-20 Ig(REF) FIGURE 20. GATE CHARGE WAVEFORMS IRF9540, RF1S9540SM All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. 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