80PF(R)...(W) High Voltage Series Vishay Semiconductors Standard Recovery Diodes Generation 2 DO-5 (Stud Version), 80 A FEATURES 80PF(R)... 80PF(R)...W * High surge current capability * Designed for a wide range of applications * Stud cathode and stud anode version * Wire version available * Low thermal resistance * Compliant to RoHS directive 2002/95/EC DO-203AB (DO-5) DO-203AB (DO-5) * Designed and qualified for multiple level TYPICAL APPLICATIONS * Converters * Power supplies PRODUCT SUMMARY IF(AV) 80 A * Machine tool controls * Welding * Any high voltage input rectification bridge MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) I2 t VRRM UNITS 80 A TC 123 C 126 A 50 Hz 1200 60 Hz 1250 50 Hz 7100 60 Hz 6450 Range 1400 to 1600 V - 55 to 150 C IF(RMS) IFSM VALUES TJ A A2 s ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 140 1400 1650 160 1600 1900 80PF(R)...(W) Document Number: 93527 Revision: 20-May-09 For technical questions, contact: ind-modules@vishay.com IRRM MAXIMUM AT TJ = 150 C mA 4.5 www.vishay.com 1 80PF(R)...(W) High Voltage Series Standard Recovery Diodes Generation 2 DO-5 (Stud Version), 80 A Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at case temperature IF(AV) Maximum RMS forward current TEST CONDITIONS 180 conduction, half sine wave IF(RMS) t = 10 ms Maximum peak, one cycle forward, non-repetitive surge current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t Low level value of threshold voltage Low level value of forward slope resistance Maximum forward voltage drop No voltage reapplied UNITS 80 A 123 C 126 A 1200 No voltage reapplied 100 % VRRM reapplied VALUES 1250 A 1000 Sinusoidal half wave, initial TJ = 150 C 1050 7100 6450 A2s 5000 100 % VRRM reapplied 4550 t = 0.1 ms to 10 ms, no voltage reapplied A2s 71 000 VF(TO) (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 0.73 V rf (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 3.0 m VFM Ipk = 220 A, TJ = 25 C, tp = 400 s rectangular wave 1.46 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range SYMBOL TJ, TStg Maximum thermal resistance, junction to case RthJC Thermal resistance, case to heatsink RthCS Maximum allowable mounting torque (+ 0 %, - 10 %) TEST CONDITIONS DC operation UNITS - 55 to 150 C 0.30 K/W Mounting surface, smooth, flat and greased 0.25 Not lubricated thread, tighting on nut (1) 3.4 (30) Lubricated thread, tighting on nut (1) 2.3 (20) Not lubricated thread, tighting on hexagon (2) 4.2 (37) Lubricated thread, tighting on hexagon (2) 3.2 (28) N*m (lbf * in) 15.8 Approximate weight Case style VALUES g 0.56 See dimensions - link at the end of datasheet oz. DO-203AB (DO-5) Notes (1) Recommended for pass-through holes (2) Torque must be appliable only to hexagon and not to plastic structure, recommended for holed heatsink www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 93527 Revision: 20-May-09 80PF(R)...(W) High Voltage Series Standard Recovery Diodes Generation 2 DO-5 (Stud Version), 80 A Vishay Semiconductors RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180 0.14 0.10 120 0.16 0.17 90 0.21 0.22 60 0.30 0.31 30 0.50 0.50 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note * The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC 80PF(R) Series 140 to 160 RthJC = 0.3 K/W 150 140 180 Sine 130 120 1200 Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (C) 160 1000 900 800 700 600 500 400 10 20 30 40 50 60 70 80 80PF(R) 70HF(R) Series Series 140 to 160 300 200 0.01 110 0 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial T J = TJ Max. No Voltage Reapplied Rated VRRM Reapplied 1100 90 0.1 Pulse Train Duration (s) Average Forward Current (A) At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = TJ Max. @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1000 900 800 700 600 500 80PF(R) Series Series 70HF(R) 140 to 160 400 300 Fig. 3 - Maximum Non-Repetitive Surge Current 1000 Instantaneous Forward Current (A) Peak Half Sine Wave Forward Current (A) Fig. 1 - Current Ratings Characteristics 1100 1 Tj = 25C Tj = Tj Max 100 10 70HF(R) 80PF(R) Series Series (140toto160 160) 140 1 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 2 - Maximum Non-Repetitive Surge Current Document Number: 93527 Revision: 20-May-09 0 0.5 1 1.5 2 2.5 3 3.5 Instantaneous Forward Voltage (V) 4 Fig. 4 - Forward Voltage Drop Characteristics For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 80PF(R)...(W) High Voltage Series Standard Recovery Diodes Generation 2 DO-5 (Stud Version), 80 A Transient Thermal Impedance Z thJC (K/W) Vishay Semiconductors 1 Steady State Value RthJC = 0.3 K/W (DC Operation) 0.1 80PF(R) Series Series 80PF(R) 140 to 160 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 5 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code 80 PF R 160 W 1 2 3 4 5 1 - 80 = Standard device 2 - PF = Plastic package 3 - None = Stud normal polarity (cathode to stud) R = Stud reverse polarity (anode to stud) 4 - 5 - Voltage code x 10 = VRRM (see Voltage Ratings table) None = Standard terminal (see dimensions for 80PF(R)... - link at the end of datasheet) W = Wire terminal (see dimensions for 80PF(R)...W - link at the end of datasheet) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 4 www.vishay.com/doc?95345 For technical questions, contact: ind-modules@vishay.com Document Number: 93527 Revision: 20-May-09 Outline Dimensions Vishay Semiconductors DO-203AB (DO-5) for 50PF(R)...(W), 80PF(R)...(W) and 95PF(R)...(W) Series DIMENSIONS FOR 80PF(R), 50PF(R) AND 95PF(R) SERIES in millimeters 6.45 MIN. O3 4.2 MAX. 1.2 MAX. 3.5 MIN. 4 MIN. Plastic cap. 25.4 MAX. 11.45 MAX. 2.4 REF. 11 0.4 1/4"28-UNF-2A For metric devices: M6 x 1 17.25 MAX. O 15.6 MAX. O 16.8 MAX. 18.9 + 0.1 0.0 Note * For metric device please contact factory Document Number: 95345 Revision: 26-Aug-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Outline Dimensions DO-203AB (DO-5) for 50PF(R)...(W), 80PF(R)...(W) and 95PF(R)...(W) Series Vishay Semiconductors DIMENSIONS FOR 80PF(R)...(W), 50PF(R)...(W) AND 95PF(R)...(W) SERIES in millimeters 2.05 MAX. Plastic cap. 25.4 MAX. 11.45 MAX. 2.4 REF. 11 0.4 1/4"-28-UNF-2A For metric devices: M6 x 1 17.25 MAX. O 15.6 MAX. O 16.8 MAX. 18.9 + 0.1 0.0 Note * For metric device please contact factory www.vishay.com 2 For technical questions, contact: indmodules@vishay.com Document Number: 95345 Revision: 26-Aug-08 Outline Dimensions DO-203AB (DO-5) for 50PF(R)...(W), Vishay Semiconductors 80PF(R)...(W) and 95PF(R)...(W) Series DIMENSIONS FOR 52PF(R), 82PF(R) AND 97PF(R) SERIES in millimeters 12.2 MAX. O 7 MAX. 123 6.6 mm2 external lead with blue or red sleeve insulation 134.4 Plastic cap. 11.45 MAX. 2.4 REF. 11 0.4 1/4"-28-UNF-2A For metric devices: M6 x 1 Note * For metric device please contact factory Document Number: 95345 Revision: 26-Aug-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000