Document Number: 93527 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 20-May-09 1
Standard Recovery Diodes
Generation 2 DO-5 (Stud Version), 80 A
80PF(R)...(W) High Voltage Series
Vishay Semiconductors
FEATURES
• High surge current capability
• Designed for a wide range of applications
• Stud cathode and stud anode version
• Wire version available
• Low thermal resistance
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for multiple level
TYPICAL APPLICATIONS
• Converters
• Power supplies
• Machine tool controls
• Welding
• Any high voltage input rectification bridge
ELECTRICAL SPECIFICATIONS
PRODUCT SUMMARY
IF(AV) 80 A
DO-203AB (DO-5)
80PF(R)... 80PF(R)...W
DO-203AB (DO-5)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IF(AV)
80 A
TC123 °C
IF(RMS) 126 A
IFSM
50 Hz 1200 A
60 Hz 1250
I2t50 Hz 7100 A2s
60 Hz 6450
VRRM Range 1400 to 1600 V
TJ- 55 to 150 °C
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM MAXIMUM
AT TJ = 150 °C
mA
80PF(R)...(W) 140 1400 1650 4.5
160 1600 1900
www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93527
2Revision: 20-May-09
80PF(R)...(W) High Voltage Series
Vishay Semiconductors Standard Recovery Diodes
Generation 2 DO-5 (Stud Version), 80 A
Notes
(1) Recommended for pass-through holes
(2) Torque must be appliable only to hexagon and not to plastic structure, recommended for holed heatsink
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
at case temperature IF(AV) 180° conduction, half sine wave 80 A
123 °C
Maximum RMS forward current IF(RMS) 126 A
Maximum peak, one cycle forward,
non-repetitive surge current IFSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = 150 °C
1200
A
t = 8.3 ms 1250
t = 10 ms 100 % VRRM
reapplied
1000
t = 8.3 ms 1050
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
7100
A2s
t = 8.3 ms 6450
t = 10 ms 100 % VRRM
reapplied
5000
t = 8.3 ms 4550
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 71 000 A2s
Low level value of threshold voltage VF(TO) (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 0.73 V
Low level value of forward slope resistance rf(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 3.0 m
Maximum forward voltage drop VFM Ipk = 220 A, TJ = 25 °C, tp = 400 µs rectangular wave 1.46 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range TJ, TStg - 55 to 150 °C
Maximum thermal resistance,
junction to case RthJC DC operation 0.30
K/W
Thermal resistance,
case to heatsink RthCS Mounting surface, smooth, flat and greased 0.25
Maximum allowable
mounting torque
(+ 0 %, - 10 %)
Not lubricated thread, tighting on nut (1) 3.4
(30)
N · m
(lbf · in)
Lubricated thread, tighting on nut (1) 2.3
(20)
Not lubricated thread, tighting on hexagon (2) 4.2
(37)
Lubricated thread, tighting on hexagon (2) 3.2
(28)
Approximate weight 15.8 g
0.56 oz.
Case style See dimensions - link at the end of datasheet DO-203AB (DO-5)
Document Number: 93527 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 20-May-09 3
80PF(R)...(W) High Voltage Series
Standard Recovery Diodes
Generation 2 DO-5 (Stud Version), 80 A Vishay Semiconductors
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Maximum Non-Repetitive Surge Current
Fig. 3 - Maximum Non-Repetitive Surge Current
Fig. 4 - Forward Voltage Drop Characteristics
RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.14 0.10
TJ = TJ maximum K/W
120° 0.16 0.17
90° 0.21 0.22
60° 0.30 0.31
30° 0.50 0.50
0 102030405060708090
110
120
130
140
150
160
Maximum Allowable Case Temperature (°C)
Average Forward Current (A)
80PF(R) Series
140 to 160
RthJC = 0.3 K/W
180° Sine
300
400
500
600
700
800
900
1000
1100
110100
Peak Hal f Sine Wave Forward Current (A)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
70HF(R) Series
Initial T = T Max.
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
JJ
80PF(R) Series
140 to 160
200
300
400
500
600
700
800
900
1000
1100
1200
0.01 0.1 1
Peak Half Sine Wave Forward Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
70HF(R) Series
Initial T = T Max.
No Voltage Reapplied
Rated V Reapplied
RRM
Versus Pulse Train Duration.
JJ
80PF(R) Series
140 to 160
0 0.5 1 1.5 2 2.5 3 3.5 4
1
10
100
1000
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
Tj = 25°C
Tj = Tj Max
70HF(R) Series
(140 to 160)
80PF(R) Series
140 to 160
www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93527
4Revision: 20-May-09
80PF(R)...(W) High Voltage Series
Vishay Semiconductors Standard Recovery Diodes
Generation 2 DO-5 (Stud Version), 80 A
Fig. 5 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Square Wave Pulse Duration (s)
Transient Thermal Impedance Z thJC (K/W)
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Steady State Value
RthJC = 0.3 K/W
(DC Operation)
80PF(R) Series
80PF(R) Series
140 to 160
1
- 80 = Standard device
Device code
51324
80 PF R 160 W
2
- PF = Plastic package
3
- None = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
4
- Voltage code x 10 = VRRM (see Voltage Ratings table)
5
- None = Standard terminal
(see dimensions for 80PF(R)... - link at the end of datasheet)
W = Wire terminal
(see dimensions for 80PF(R)...W - link at the end of datasheet)
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95345
Document Number: 95345 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 26-Aug-08 1
DO-203AB (DO-5) for 50PF(R)...(W),
80PF(R)...(W) and 95PF(R)...(W) Series
Outline Dimensions
Vishay Semiconductors
DIMENSIONS FOR 80PF(R), 50PF(R) AND 95PF(R) SERIES in millimeters
Note
• For metric device please contact factory
Ø 15.6 MAX.
Ø 16.8 MAX.
18.9 + 0.1
0.0
3.5 MIN.
2.4 REF.
4 MIN.
4.2 MAX.
6.45 MIN.
For metric devices: M6 x 1
Ø 3
Plastic cap.
1.2 MAX.
11 ± 0.4
11.45 MAX.
1/4"28-UNF-2A
17.25 MAX.
25.4 MAX.
www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 95345
2Revision: 26-Aug-08
Outline Dimensions
Vishay Semiconductors DO-203AB (DO-5) for 50PF(R)...(W),
80PF(R)...(W) and 95PF(R)...(W) Series
DIMENSIONS FOR 80PF(R)...(W), 50PF(R)...(W) AND 95PF(R)...(W) SERIES in millimeters
Note
• For metric device please contact factory
Ø 15.6 MAX.
Ø 16.8 MAX.
18.9
+ 0.1
0.0
2.4 REF.
For metric devices: M6 x 1
2.05 MAX.
Plastic cap.
17.25 MAX.
1/4"-28-UNF-2A
11 ± 0.4
11.45 MAX.
25.4 MAX.
Document Number: 95345 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 26-Aug-08 3
Outline Dimensions
DO-203AB (DO-5) for 50PF(R)...(W),
80PF(R)...(W) and 95PF(R)...(W) Series Vishay Semiconductors
DIMENSIONS FOR 52PF(R), 82PF(R) AND 97PF(R) SERIES in millimeters
Note
• For metric device please contact factory
2.4 REF.
For metric devices: M6 x 1
6.6 mm2 external lead with
blue or red sleeve insulation
Ø 7 MAX.
12.2 MAX.
Plastic cap.
1/4"-28-UNF-2A
11 ± 0.4
11.45 MAX.
123
134.4
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 02-Oct-12 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
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any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
