SAMSUNG SEMTCONDUCTOR INC 48 el eFbu hte 0003854 e i eH ee fe oe L ee ae KA2201/N T~14-06- Ol LINEAR INTEGRATED CIRCUIT . 1.2W AUDIO POWER AMPLIFIER TheKA2201/Nis a monolithic integrated audio amplifier in 8 pin plastic dual in line package designed for audio frequency class B amplifier. FEATURES Wide operating supply voltage (3V ~ 14V) * Medium output power. Po =1.2W at Vcc =9V, Ri =82, THD=10%. Low quiescent circuit current (Icc =4mA: Typ). Good ripple rejection. - Minimum number of external parts required. 8 DIP o Qe + ae r- SCHEMATIC DIAGRAM ory os] Ir Re = o Q2 as I Ri : = Rs ce SAMSUNG SEMICONDUCTOR 70 SAMSUNG SEMICONDUCTOR INC 948 DE squuu42 003854 4 [. + Pr 100W/16V woe a a a a T- > ty os ~O! KA2201IN LINEAR INTEGRATED CIRCUIT ABSOLUTE MAXIMUM RATINGS (Ta =25C) , Characteristic Symbol Value Unit Supply Voltage Veco 16 Vv Output Peak Current lo 1.5 A Power Dissipation Py 1.25 Ww Operating Temperature Topr -20~ +70 c Storage Temperature Tstg -40~ +150 C ELECTRICAL CHARACTERISTICS (Ta= 25C, Veo = 9V, f= 1KHz, Ry =6000, R, =1200, R, =89 unless otherwise specified) Characteristic Symbol Test Conditions Min Typ Max | Unit Quiescent Circuit Current lec Vi=0 4 12 mA : Veco = 9V, RL= 402, THD = 10% 1.6 Voc = 9V, Ri = 82, THD = 10% 0.9 1.2 Output Power Po Veco = 6V, RL= 40, THD = 10% 0.75 w Voc = 6V, RL= 80, THD = 10% 0.4 0.5 Voc = 12V, RL= 82, THD = 10% 2 Total Harmonic Distortion THD Po = 500mMW 0.3 1.0 % Voltage Gain (Open Loop) Avo R= 75 dB . Voltage Gain (Closed Loop) Ay R, = 1202 33 36 39 dB Input Resistance Ri 5 MQ . Rg = 10K2 , Output Noise Voltage Vno BW (3dB) = 50Hz~ 20KHz 0.3 1.0 mV TEST CIRCUIT - veo ce wt - L C4 100W/16V PZ 56 1 O1p OQ OUTPUT eo ae a ee KA2201/N SAMSUNG SEMECONDUCTOR INC 4A DE EB vacuaue o003455 & en Co Pe DMA 05-01 j LINEAR INTEGRATED CIRCUIT QUIESCENT CIRCUIF CURRENTSUPPLY VOLTAGE 10 IgclmA}, QUIESCENT CIRCUIT CURRENT 9 4 8 12 16 2 Voc(), SUPPLY VOLTAGE FREQUENCY RESPONSE RESPONSE (d8) 10 235 10235 IK 23 6 10K 23 5 100K KHz}, FREQUENCY TOTAL HARMONIC DISTORTION-OUTPUT POWER Voc = 9V R.=80 R= 1200, t= 1KHz THD(%), TOTAL HARMONIC DISTORTION 0 9 02 04 O6 08 1.0 Pw), OUTPUT POWER 12 14 THD (%}, TOTAL HARMONIC DISTORTION AXdB), CLOSED LOOP VOLTAGE GAIN OUTPUT POWER-SUPPLY VOLTAGE THO = 10% f= 1KHz R= o 2 4 6 8 0 i2 4 6 8 Vee{V}, SUPPLY VOLTAGE TOTAL HARMONIC DISTORTION-FREQUENCY 0 10 235 100 235 1K 23 5 10K 23 5 100K KH2), FREQUENCY VOLTAGE GAIN-FEEDBACK RESISTANCE 0 Lo 400 150 RAM), FEEDBACK RESISTANCE & SAMSUNG SEMICONDUCTOR 72 KA2201/N SAMSUNG SEMICONDUCTOR INC a Def raeua4e oo03 T-"14 -OF-Of LINEAR INTEGRATED CIRCUIT POWER DISSIPATION-OUTPUT POWER Voc =9V R.=8a f= a 2 a S 2 oe PW), POWER DISSIPATION 2 8 Qo 05 1 15 P{W), OUTPUT POWER POWER DISSIPATION-SUPPLY VOLTAGE 1.0 . 8a 160 08 2 < 5 08 a 4 Ww 2 9 04 g - 02 9 4 8 12 16 20 Vee{V}, SUPPLY VOLTAGE rH SAMSUNG SEMICONDUCTOR anes 35 . ay i