SbE D MM 7929237 GO41577 33T MBSGTH ky SGS-THOMSON MICROELECTRONICS Til-il BZX 55 C 0V8 > 200 S G S-THOMSON ZENER DIODES LARGE VOLTAGE RANGE : 0.8V TO 200V DOUBLE SLUG TYPE CONSTRUCTION PRO ELECTRON REGISTRATION CECC FOR TYPES : 2.7V TO 62V (level quality assessment :L) DESCRIPTION DO 35 500mW hermetically sealed glass silicon Zener (Glass) diodes. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit Prot Power Dissipation* Tamp = 50C 0.5 Ww lzm Continuous Reverse Current Tamb = 50C See page 2 mA Tstg Storage and Junction Temperature Range - 65 to 175 C q 55 to 175 TL Maximum Lead Temperature for Soldering during 230 C 10s at 4mm from Case THERMAL RESISTANCE Symbol Parameter Value Unit Rth g a) | Junctionambient* 250 C * On infinite heatsink with 4mm lead length July 1989 144 99 SbE D MM 7929237 0041578 276 MSGTH BZX 55 C OV8 200 SG S-THOMSON ELECTRICAL CHARACTERISTICS (Tam) = 25C unless otherwise specified} Types Varilzt rztAzt | lzt tz/lz x Vz In/VR Vr lzm (1} ) (1) Tamb Tamb 25 150C 50C min max max max min max max max (V) (2) (mA) (2) (mA) (1040) (uA) (v) (mA) BZX 55 OVB (2) 073 083 8 5 600 1 BZ2X 55 C 2Vv4 228 256 85 5 600 1 -8 -6 50 100 1 155 A BZX 55 C 2V7 25 29 85 5 600 1 -8 -6 10 50 1 135 A B2X 55 C 3V0 28 3.2 85 5 600 1 -8 -6 4 40 1 125 P+ A BZX 56 V 3V3 31 35 85 5 600 1 -8 -5 2 40 1 115 P + A BZX 55 C 3V6 34 38 85 5 600 1 -8 -4 2 40 1 105 P + A BZX 55 3V9 37 41 85 5 600 1 -7? -3 2 40 1 95 P + A BZX 55 C 4V3 40 46 75 5 600 1 -4 -14 1 20 1 30 P + A BZX 55 C 4V7 44 50 60 5 600 1 -3 1 05 10 1 85 P + A BZX 55 C 5V1 48 54 35 5 550 1 -2 5 o1 2 1 80 P + A BZX 55 C 5V6 52 60 25 5 460 1 -1 6 01 2 1 70 P + 4 BZX 55 C 6V2 58 66 10 5 200 1 0 7 01 2 2 64 P + A BZX 55 C 6V8 64 72 8 5 150 1 1 8 01 2 3 58 P + A BZX 55 C 7V5 70 79 7 5 50 64 4 9 01 2 5 3 P + A BZX 55 C 8V2 77 87 7 5 50. 1 1 9 01 2 62 47 P + A BZX55C 9V1 85 96 10 5 50.1 2 10 01 2 6.8 43 P + A BZ2X55C 10 94 106 15 5 70 1 3 1 01 2 75 40 > A BZX55C 11 104 116 20 5 70 1 3 WW 01 2 82 36 P > A BZX55C 12 114 127 20 5 90 61 3 am O71 2 971 32 * A BZX55C13 124 141 26 5 110 1 3 14 01 2 10 29 P+ A BZX55C 15 138 156 30 5 110 1 3 am 0.1 2 11 27 - A BZX 55 C 16 153 171 40 5 170 1 3 11 o1 2 12 24 P+ A BZX 5518 168 191 50 5 170 #64 3 11 o1 2 13 21 P - A BZ2X 55 C 20 188 212 55 5 220 1 3 nl 01 2 15 20 P + A BZX 55 C 22 208 233 55 5 220 1 3 W1 a1 2 16 18 P + A BZX 55C 24 228 256 80 5 220 1 4 12 o1 2 18 16 P + A BZX 55C 27 251 289 80 5 220 1 4 12 01 2 20 {4 * A BZX 55 C 30 28 32 80 5 220 1 4 12 o1 2 22 13 P + A BZX 55 C 33 31 35 80 5 220 1 4 12 01 2 24 12 + A BZX 55 C 36 34 38 80 5 220 1 4 12 01 2 27 1 * A BZX 55 C 39 37 41 90 25 500 05 4 12 01 5 30 10 > A BZX 55 C 43 40 46 90 25 600 05 4 12 01 5 33 92 + A BZ2X 55 C 47 44 50 110 25 700 OS 4 12 o1 5 36 85 A BZX55C 51 48 54 125 25 700) 6005 4 12 01 10 39 78 A BZX 55 C 56 Se 60 135 25 1000 05 4 12 01 10 43 70 * A BZX 55 C 62 58 66 150 25 1000 05 4 12 01 10 47 64 . BZX 55 C 68 64 72 200 25 1000 05 4 12 01 10 51 59 : BZX 55 C75 70 80 250 25 1500 05s 4 12 01 10 56 53 . BZX 55 C 82 77 a7 300 25 2000 05 4 12 O71 10 62 48 BZX 55 C 91 85 96 450 1 5000 01 4 12 0.4 10 68 44 BZX 55 C 100 94 106 450 1 5000 01 4 12 01 10 75 40 BZX 55 C 110 104 116 600 1 5000 01 4 12 0.1 10 82 36 BZX 55 120 114 127 800 1 5000 o1 4 12 0.1 10 91 33 BZX 55 C 130 124 141 1000 1 5000 a1 4 t2 0.1 10 |100 30 BZX 55 C 150 138 156 1200 1 000 at 4 12 01 10 1110 26 BZX 55 C 160 153 171 1500 1 5000 a1 4 12 01 10 1120 25 BZX 55 C 180 168 191 1800 1 5000 O1 4 12 ot 10 1130 22 BZX 55 200 188 212 2000 1 5000 o1 4 12 01 10 4150 20 (1) Pulse test 20ms< tps 50ms 58 < 2% (2) The BZX 55 C OV8 is a diode used with a positive bias The lead which 1s marked by a ring should be connected to the negative terminal of the current source A Devices under CCQ/CECC Esa qualified product P Preferred voltages The regulatian voltages are detined according to the E24 series Tight tolerances on preferred voltages only BZX55B +2%BZX55A 11% Forward voltage drop Ve <1 5V (Tamp = 5C, Ir = 200mA) 2/4 ka7 SGS-THOMSO 4 SesTHOMSON 100 SbE D MM 7929237 0041579 8S G S-THOMSON P{W) 6 Tamp (C) 0 25 50 75 100 125 150175 Fig.1 - Pawer dissipation versus ambient temperature on infinite heatsink. Zz (% 4100 50 t {s) 40-1 4 410 0 40-3 402 102 Fig.3 - Transient thermal impedance junctian-ambient versus pulse duration. 102 MBSGTH BZ2X 55 C 0V8 200 {c /w#) 400 300 200 400 0 5 10 45 20 25 Fig.2 - Thermal resistance versus lead length on infinite heatsink. INFINITE HEATSINK L Test point of teonnexion (a) C (pF) 409 1071 55 82x 55 8, = 40-2 ZX 25 C 39 40 55 Cc 200 Vp (Vv) Vew W) 4073 4 10 100 500 0.7 0.8 0.9 4 4.4 41.2 Fig.4 ~ Capacitance versus reverse Fig.5 - Peak forward current applied voltage. versus peak forward voltage drop {typical values) . G7 SGS-THOMSON 34 oY, MICROELECTROMICS 101 S6E D MM 7929237 GO41580 924 MESGTH BZX 55 C OVS 200 G S-THOMSON Tp (ma) {a} 103 Ty = 150 C Va = 0.75 VzT i 102 10-4 10-2 410 4973 Vzr (W} Vz7 } 10-4 4 10 102 4 10 102 403 Fig.6 ~ Aeverse current versus regulation Fig.7 - Differential resistance versus voltage {maximum values) . regulation voltage (maximum values) . PACKAGE MECHANICAL DATA DO 35 Glass 127 min 3,05 va 12,7 min 2153 4,50 ~ 2,00 | SF ee SS - -@)- i Cooling method by convection and conduction Marking clear, ring at cathode end Weight 0 15g aA G7 SGS-THOMSON yf MICROELECTROMICS 102