2SD882D - DC Components Co., Ltd.

2SD882D

DISCRETE SEMICONDUCTORS

DC COMPONENTS CO., LTD.

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description

Designed for use in output stage of 1W audio amplifier,

voltage regulator, DC-DC converter and relay driver.

Pinning

1 = Emitter

2 = Collector

3 = Base

Characteristic Symbol Rating Unit

Collector-Base Voltage VCBO 40 V

Collector-Emitter Voltage VCEO 30 V

Emitter-Base Voltage VEBO 5 V

Collector Current(DC) IC3 A

Collector Current(Pulse) IC7 A

Base Current(DC) IB0.6 A

Total Power Dissipation(TC=25oC) PD10 W

Total Power Dissipation(TA=25oC) PD1 W

Junction Temperature TJ+150 oC

Storage Temperature TSTG -55 to +150 oC

Absolute Maximum Ratings(TA=25oC)

Characteristic Symbol Min Typ Max Unit Test Conditions

Collector-Base Breakdown Volatge BVCBO 40 - - V IC=100µA

Collector-Emitter Breakdown Voltage BVCEO 30 - - V IC=1mA

Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=10µA

Collector Cutoff Current ICBO - - 1 µA VCB=30V

Emitter Cutoff Current IEBO - - 1 µA VEB=3V

Collector-Emitter Saturation Voltage(1) VCE(sat) - 0.3 0.5 V IC=2A, IB=0.2A

Base-Emitter Saturation Voltage(1) VBE(sat) - 1 2 V IC=2A, IB=0.2A

DC Current Gain(1) hFE1 30 150 - - IC=20mA, VCE=2V

hFE2 100 200 500 - IC=1A, VCE=2V

Transition Frequency fT- 90 - MHz IC=0.1A, VCE=5V

Output Capacitance Cob - 45 - pF IE=0, VCB=10V, f=1MHz

Electrical Characteristics

(Ratings at 25oC ambient temperature unless otherwise specified)

(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%

Rank Q P E

Range 100~200 160~320 250~500

Classification of hFE2

TO-126ML

Dimensions in inches and (millimeters)

.090

(2.28)

.123(3.12)

.113(2.87)

.084(2.14)

.074(1.88)

.033(0.84)

.027(0.68)

.163(4.12)

.153(3.87) .044(1.12)

.034(0.87)

.060(1.52)

.050(1.27)

.084(2.12)

.074(1.87)

.591(15.0)

.551(14.0)

.300(7.62)

.290(7.37)

.148(3.75)

.138(3.50)

.056(1.42)

.046(1.17)

.180

(4.56)Typ

.146(3.70)

.136(3.44)

.027(0.69)

.017(0.43)

Typ

123