LESHAN RADIO COMPANY, LTD. High-speed diode BAS516 FEATURES * Ultra small plastic SMD package * High switching speed: max. 4 ns * Continuous reverse voltage: max. 75 V * Repetitive peak reverse voltage: max. 85 V * Repetitive peak forward current: max. 500 mA. APPLICATIONS * High-speed switching in e.g. surface mounted circuits. DESCRIPTION The BAS516 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD523 (SC79) SMD plastic package. 1 2 SOD523 SC-79 1 CATHODE 2 ANODE LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V RRM VR repetitive peak reverse voltage continuous reverse voltage IF I FRM continuous forward current repetitive peak forward current T s =90C; note 1; see Fig.1 I FSM non-repetitive peak forward current P tot T stg total power dissipation storage temperature Tj junction temperature CONDITIONS MIN. MAX. UNIT - - 85 75 V V - - 250 500 mA mA square wave; T j =25C prior to surge; see Fig.3 t =1s - 4 A t =1 ms t =1 s - - 1 0.5 A A T s =90C; note 1 - -65 500 +150 mW C - 150 C MAX. UNIT 715 855 mV mV 1 1.25 V V 30 1 nA A 30 50 A A 1 4 pF ns 1.75 V CONDITIONS VALUE UNIT note 1 120 K/W Note 1. Ts is the temperature at the soldering point of the cathode tab. ELECTRICAL CHARACTERISTICS T j =25C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VF forward voltage see Fig.2 I F = 1 mA I F = 10 mA I F =50 mA I F = 150 mA IR reverse current see Fig.4 V R = 25 V V R =75 V V R = 25 V; T j = 150 C V R = 75 V; T j = 150 C; Cd t rr V fr diode capacitance reverse recovery time forward recovery voltage f = 1 MHz; V R = 0; see Fig.5 when switched from I F =10mA to I R = 10mA; R L = 100 ; measured at I R = 1 mA; see Fig.6 when switched from IF = 10 mA; tr = 20 ns; see Fig.7 THERMAL CHARACTERISTICS SYMBOL PARAMETER R Note thermal resistance from junction to soldering point 1. Soldering point of the cathode tab. th j-s S29-1/2 LESHAN RADIO COMPANY, LTD. BAS516 300 500 400 200 I F (mA) I F (mA) 300 200 100 100 (1) T j = 150 C; typical values. (2)T j =25C; typical values. (3) T j =25C; maximum values. 0 0 50 100 150 200 0 0 T S ( C ) 1 2 V F( V ) Fig.1 Maximum permissible continuous forward current as a function of soldering point temperature. Fig.2 Forward current as a function of forward voltage. 10 2 I FSM (A) 10 1 Based on square wave currents; T j =25C prior to surge. 10 -1 0 102 10 103 104 t P ( s ) Fig.3 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 0.6 10 5 10 4 C d (pF) I R (nA) 0.4 10 3 0.2 10 2 f = 1 MHz ; T j =25C; 10 0 100 T J ( C ) Fig.4 Reverse current as a function of junction temperature. 200 0 0 4 8 12 16 V R( V ) Fig.5 Diode capacitance as a function of reverse voltage; typical values. S29-2/2 LESHAN RADIO COMPANY, LTD. BAS516 (1) I R = 1 mA. Input signal: reverse pulse rise time t r = 0.6 ns; reverse voltage pulse duration t p = 100 ns; duty factor = 0.05; Oscilloscope: rise time t r = 0.35 ns. Fig.6 Reverse recovery voltage test circuit and waveforms. Input signal: forward pulse rise time t r= 20 ns; forward current pulse duration t p 100 ns; duty factor 0.005. Fig.7 Forward recovery voltage test circuit and waveforms. S29-3/2