LESHAN RADIO COMPANY, LTD.
S29–1/2
High-speed diode
SOD523 SC-79
1
2
BAS516
2
ANODE
1
CATHODE
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V RRM repetitive peak reverse voltage – 85 V
V Rcontinuous reverse voltage – 7 5 V
I Fcontinuous forward current T s =90°C; note 1; see Fig.1 – 2 50 mA
I FRM repetitive peak forward current – 500 mA
I FSM
non-repetitive peak forward current square wave; T
j
=25°C prior to
surge; see Fig.3
t =1µs–4A
t =1 ms – 1 A
t =1 s – 0.5 A
P tot total power dissipation T s =90°C; note 1 – 5 00 mW
T stg storage temperature -65 +150 °C
T jjunction temperature – 15 0 °C
Note
1. Ts is the temperature at the soldering point of the cathode tab.
ELECTRICAL CHARACTERISTICS T j =25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V Fforward voltage see Fig.2 I F = 1 mA 715 mV
I F = 10 mA 855 mV
I F =50 mA 1 V
I F = 150 mA 1.25 V
I R reverse current see Fig.4 V R = 25 V 30 nA
V R =75 V 1 µA
V R = 25 V; T j = 150 °C 30 µA
V R = 75 V; T j = 150 °C; 50 µA
C ddiode capacitance f = 1 MHz; V R = 0; see Fig.5 1 pF
t rr reverse recovery time
when switched from I
F
=10mA to I
R
= 10mA;
4ns
R
L
= 100 Ω; measured at I
R
= 1 mA; see Fig.6
V fr forward recovery voltage
when switched from IF = 10 mA; tr = 20 ns; see Fig.7
1.75 V
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R th j-s
thermal resistance from junction to soldering point
note 1 12 0 K/W
Note 1. Soldering point of the cathode tab.
FEATURES
· Ultra small plastic SMD package
· High switching speed: max. 4 ns
· Continuous reverse voltage: max. 75 V
· Repetitive peak reverse voltage: max. 85 V
· Repetitive peak forward current: max. 500 mA.
APPLICATIONS
· High-speed switching in e.g. surface mounted
circuits.
DESCRIPTION
The BAS516 is a high-speed
switching diode fabricated in
planar technology, and
encapsulated in the SOD523
(SC79) SMD plastic package.
LESHAN RADIO COMPANY, LTD.
S29–2/2
500
400
300
200
100
0
012
T S ( °C )
300
200
100
0
0 50 100 150 200
V F ( V )
I F (mA)
0.6
0.4
0.2
0
0 100 200
T J ( °C )
I R (nA)
C d (pF)
0481216
Fig.1 Maximum permissible continuous forward current as a
function of soldering point temperature. Fig.2 Forward current as a function of
forward voltage.
(1) T j = 150 °C; typical values.
(2)T j =25°C; typical values.
(3) T j =25°C; maximum values.
I F (mA)
Fig.3 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents;
T j =25°C prior to surge.
t P ( µs )
I FSM (A)
10 2
10
1
10 -1
01010
2103104
10 5
10 4
10 3
10 2
10
V R( V )
f = 1 MHz ; T j =25°C;
Fig.4 Reverse current as a function of junction
temperature. Fig.5 Diode capacitance as a function of
reverse voltage; typical values.
BAS516
LESHAN RADIO COMPANY, LTD.
S29–3/2
BAS516
(1) I R = 1 mA.
Input signal: reverse pulse rise time t r = 0.6 ns; reverse voltage pulse duration t p = 100 ns; duty factor δ = 0.05;
Oscilloscope: rise time t r = 0.35 ns.
Fig.6 Reverse recovery voltage test circuit and waveforms.
Input signal: forward pulse rise time t r = 20 ns; forward current pulse duration t p ≥ 100 ns; duty factor δ ≤ 0.005.
Fig.7 Forward recovery voltage test circuit and waveforms.
