A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
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RF ELECTRICAL SPECIFICATIONS TA = 25 OC
TRANS1.SYM
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
MAG MAX AVAILABLE GAIN
FREQUENCY = 8.0 GHz 8.5 dB
PMAG OUTPUT POWER AT MAG TUNING
FREQUENCY = 8.0 GHz 24 dBm
HIGH POWER GaAs FET
MSC8001
FEATURES INCLUDE:
•27.5 dBm Out put Power with 7db
Associated Gain at 8 G Hz
•Power Optimized Design Pr ovides
High Power-added Efficiency
•Large Cr oss Sect ion Ti/Pt/Au
Gates Enhance Durability and
Reliability
•Chip Devices are Selected fr om
Standard Military Grade Wafer s
•Hermetic Metal/Ceramic Package
Suitable f o r Hi-Rel Applications
•Custom Electr ical Test and
Screening Available f o r Sour ce
Control Dr awings
FET PACKAGE TYPE 30
