SEMICONDUCTOR KTB688B TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES B Q K F Recommended for 45 50W Audio Frequency Amplifier Output Stage. R G H I C J Complementary to KTD718B. D E ) L MAXIMUM RATING (Ta=25 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -120 V Emitter-Base Voltage VEBO -5 V Collector Current IC -10 A Base Current IB -1 A PC 80 W Tj 150 Tstg -55 150 M d P 1 P 2 T 3 1. BASE DIM MILLIMETERS _ 0.20 A 15.60 + _ 0.20 B 4.80 + _ 0.20 C 19.90 + _ 0.20 D 2.00 + _ 0.20 d 1.00 + _ 0.20 E 3.00 + _ 0.20 3.80 + F _ 0.20 G 3.50 + _ 0.20 H 13.90 + _ 0.20 I 12.76 + _ 0.20 J 23.40 + K 1.5+0.15-0.05 _ 0.30 L 16.50 + _ 0.20 M 1.40 + _ 0.20 13.60 + N _ 0.20 9.60 + O _ 0.30 P 5.45 + _ 0.10 Q 3.20 + _ 0.20 R 18.70 + 0.60+0.15-0.05 T 2. COLLECTOR (HEAT SINK) 3. EMITTER Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC TO-3P(N)-E ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-120V, IE=0 - - -10 A Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -10 A Collector-Emitter Breakdown Voltage V(BR)CEO IC=-50mA, IB=0 -120 - - V DC Current Gain hFE (Note) VCE=-5V, IC=-1A 55 - 160 VCE(sat) IC=-5A, IB=-0.5A - - -2.5 V Base-Emitter Voltage VBE VCE=-5V, IC=-5A - - -1.5 V Transition Frequency fT VCE=-5V, IC=-1A - 10 - MHz VCB=-10V, IE=0, f=1MHz - 280 - pF Collector-Emitter Saturation Voltage Cob Collector Output Capacitance Note : hFE Classification R:55 2005. 3. 14 110, O:80 160 Revision No : 1 1/2 KTB688B 0m A COMMON EMITTER -4 0 -8 Tc=25 C mA 0 -30 -200mA -6 -100mA -4 -50mA I B =-20mA -2 0mA 0 -2 -4 -6 -8 -10 -12 -14 100 1 Ta=Tc INFINITE HEAT SINK 2 300x300x2mm Al HEAT SINK 3 200x200x2mm Al HEAT SINK 4 100x100x2mm Al HEAT SINK 1 80 60 2 40 3 5 NO HEAT SINK 4 20 5 0 0 40 80 120 160 200 COLLECTOR-EMITTER VOLTAGE VCE (V) AMBIENT TEMPERATURE Ta ( C) VCE(sat) - IC SAFE OPERATING AREA -5 -3 -30 COMMON EMITTER -1 -0.5 -0.3 C 0 10 = Tc Tc=25 C Tc=-25 C -0.1 -0.05 -0.03 -0.03 -0.1 t=1ms t=10ms t=100ms t=500ms I C MAX(PULSED) I C/I B =10 -0.01 -0.01 240 -0.3 -1 -3 -10 I C MAX(CONTINUOUS) -10 DC O Tc PE =2 RA 5 TI C ON -5 -3 -1 SINGLE NONREPETITIVE PULSE Tc=25 C -0.5 -0.3 VCEO MAX COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 0 COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) -10 COLLECTOR POWER DISSIPATION PC (W) Pc - Ta IC - VCE CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE -0.1 COLLECTOR CURRENT IC (A) -1 -3 -10 -30 -100 -300 COLLECTOR EMITTER VOLTAGE VCE (V) hFE - IC 1k DC CURRENT GAIN hFE COMMON EMITTER 500 VCE =-5V 300 Tc=100 C Tc=25 C 100 Tc=-25 C 50 30 10 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 COLLECTOR CURRENT IC (A) 2005. 3. 14 Revision No : 1 2/2