SMD Schottky Barrier Diodes CDBV1100-HF Forward current: 1.0 A Reverse voltage: 100V RoHS Device Halogen Free SOD-323 0.071(1.80) 0.063(1.60) Features 0.012(0.30) Typ. - Low leakage current. 0.055(1.40) 0.047(1.20) 0.108(2.75) 0.100(2.55) - Easy pick and place. - Plastic package has Underwriters Lab. Flammability Classification 94V-0 - Exceeds environmental standard MIL-S-19500/228. 0.004(0.10) Typ. 0.035(0.90) Max. 0.004(0.10) 0.001(0.02) Mechanical Data 0.017(0.42) 0.009(0.22) - Case: SOD-323, molded plastic. Dimensions in inches and (millimeter) - Terminals: Solderable per MIL-STD-750, method 2026. - Polarity: Indicated by cathode end. Circuit Diagram Maximum Ratings (at T =25C unless otherwise noted) A Symbol Value Unit 100 V VR(RMS) 70 V IO 1 A Non-repetitive peak forward surge current @ t=8.3ms IFSM 9 A Power dissipation PD 250 mW RJA 400 C/W TJ -55 ~ +150 C TSTG -55 ~ +150 C Parameter Peak repetitive reverse voltage VRRM Working peak reverse voltage VRWM RMS reverse voltage Average rectified output current Thermal resistance from junction to ambient Operating junction temperature range Storage temperature range Electrical Characteristics Conditions Parameter Reverse current (at TA=25C unless otherwise noted) VR = 100V , TJ=25C Symbol IR IF = 0.1A Min. Typ. Max. Unit 0.2 50 A 0.52 Forward voltage (Note 1) VF V 0.82 IF = 1A Total capacitance f = 1MHz , VR = 4V Ctot 25 pF Notes: (1) Pulse test : tp300s ; 0.02 Company reserves the right to improve product design , functions and reliability without notice. REV:C Page 1 QW-JB067 Comchip Technology CO., LTD. SMD Schottky Barrier Diodes RATING AND CHARACTERISTIC CURVES (CDBV1100-HF) Fig.1 - Power Derating Curve Fig.2 - Typical Forward Characteristics 1000 Instantaneous Forward Current, (mA) 300 Power Dissipation, (mW) 250 200 150 100 50 0 TJ=150C TJ=125C 100 TJ=100C TJ=75C 10 TJ=50C TJ=25C 1 0 0 25 50 75 100 125 0 150 Ambient Temperature, (C) 0.3 0.4 0.5 0.6 0.7 0.8 Fig.4 - Typical Capacitance or Diodes 1000.00 80 TJ=150C TJ=125C 10.00 TJ=100C 1.00 TJ=75C TJ=50C 0.10 TJ=25C 0.01 Capacitance of Diode, (pF) 70 100.00 Reverse Current, (A) 0.2 Forward Voltage, (V) Fig.3 - Typical Reverse Characteristics 0 0 0.1 60 50 40 30 20 10 0 20 40 60 80 100 Reverse Voltage, (V) 0 10 20 30 40 Reverse Voltage, (V) Company reserves the right to improve product design , functions and reliability without notice. REV:C Page 2 QW-JB067 Comchip Technology CO., LTD. SMD Schottky Barrier Diodes Reel Taping Specification 12 o 0 D2 D1 D W1 SOD-323 SOD-323 SYMBOL A B C d D D1 D2 (mm) 1.46 0.05 3.30 0.05 1.25 0.05 1.50 + 0.10 178.00 1.00 54.40 1.00 13.00 0.50 (inch) 0.057 0.002 0.130 0.002 0.049 0.002 0.059 + 0.004 7.008 0.039 2.142 0.039 0.512 0.020 SYMBOL E F P P0 P1 W W1 12.30 1.00 0.484 0.039 (mm) 1.75 0.10 3.50 0.05 4.00 0.10 4.00 0.10 2.00 0.05 8.00 + 0.30 - 0.10 (inch) 0.069 0.004 0.138 0.002 0.158 0.004 0.158 0.004 0.079 0.002 0.315 + 0.012 - 0.004 Company reserves the right to improve product design , functions and reliability without notice. REV:C Page 3 QW-JB067 Comchip Technology CO., LTD. SMD Schottky Barrier Diodes Marking Code Part Number Marking Code CDBV1100-HF 10 XX XX = Product type marking code = The marking bar indicates the cathode. Suggested PAD Layout SOD-323 B SIZE (mm) (inch) A 1.60 0.063 B 0.63 0.024 C 0.83 0.033 A D 2.86 0.112 D C Note: 1.The pad layout is for reference purposes only. Standard Packaging REEL PACK Case Type SOD-323 REEL Reel Size ( pcs ) (inch) 3,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV:C Page 4 QW-JB067 Comchip Technology CO., LTD.