CDBV1100-HF
Forward current: 1.0 A
Reverse voltage: 100V
RoHS Device
Features
- Low leakage current.
- Easy pick and place.
Mechanical Data
- Case: SOD-323, molded plastic.
- Terminals: Solderable per MIL-STD-750,
method 2026.
- Polarity: Indicated by cathode end.
SMD Schottky Barrier Diodes
Circuit Diagram
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter Unit
Peak repetitive reverse voltage
Working peak reverse voltage
RMS reverse voltage
Average rectified output current
Non-repetitive peak forward surge current @ t=8.3ms
Power dissipation
Thermal resistance from junction to ambient
Operating junction temperature range
Symbol
VRRM
VRWM
VR(RMS)
IO
IFSM
PD
RθJA
TJ
100
1
9
250
400
-55 ~ +150
V
V
A
A
mW
°C/W
°C
Storage temperature range TSTG -55 ~ +150 °C
Value
70
QW-JB067 Page 1
REV:C
Comchip Technology CO., LTD.
Company reserves the right to improve product design , functions and reliability without notice.
- Plastic package has Underwriters Lab. Flammability
Classification 94V-0
- Exceeds environmental standard MIL-S-19500/228.
Halogen Free
Electrical Characteristics (at TA=25°C unless otherwise noted)
Notes: (1) Pulse test : tp 300μs ; δ≤0.02≤
SOD-323
Forward voltage (Note 1) VFV
0.82
Symbol Typ.
Parameter Min. Max. Unit
Conditions
IF = 1A
0.52
Reverse current IRμA
VR = 100V , TJ=25°C
Total capacitance 25
Ctot pF
f = 1MHz , VR = 4V
50
IF = 0.1A
0.2
0.071(1.80)
0.063(1.60)
0.055(1.40)
0.047(1.20)
0.108(2.75)
0.100(2.55)
0.012(0.30)
Typ.
0.004(0.10)
0.017(0.42)
0.004(0.10)
0.001(0.02)
0.009(0.22)
0.035(0.90)
Max. Typ.
Dimensions in inches and (millimeter)