CDBV1100-HF
Forward current: 1.0 A
Reverse voltage: 100V
RoHS Device
Features
- Low leakage current.
- Easy pick and place.
Mechanical Data
- Case: SOD-323, molded plastic.
- Terminals: Solderable per MIL-STD-750,
method 2026.
- Polarity: Indicated by cathode end.
SMD Schottky Barrier Diodes
Circuit Diagram
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter Unit
Peak repetitive reverse voltage
Working peak reverse voltage
RMS reverse voltage
Average rectified output current
Non-repetitive peak forward surge current @ t=8.3ms
Power dissipation
Thermal resistance from junction to ambient
Operating junction temperature range
Symbol
VRRM
VRWM
VR(RMS)
IO
IFSM
PD
RθJA
TJ
100
1
9
250
400
-55 ~ +150
V
V
A
A
mW
°C/W
°C
Storage temperature range TSTG -55 ~ +150 °C
Value
70
QW-JB067 Page 1
REV:C
Comchip Technology CO., LTD.
Company reserves the right to improve product design , functions and reliability without notice.
- Plastic package has Underwriters Lab. Flammability
Classification 94V-0
- Exceeds environmental standard MIL-S-19500/228.
Halogen Free
Electrical Characteristics (at TA=25°C unless otherwise noted)
Notes: (1) Pulse test : tp 300μs ; δ0.02
SOD-323
Forward voltage (Note 1) VFV
0.82
Symbol Typ.
Parameter Min. Max. Unit
Conditions
IF = 1A
0.52
Reverse current IRμA
VR = 100V , TJ=25°C
Total capacitance 25
Ctot pF
f = 1MHz , VR = 4V
50
IF = 0.1A
0.2
0.071(1.80)
0.063(1.60)
0.055(1.40)
0.047(1.20)
0.108(2.75)
0.100(2.55)
0.012(0.30)
Typ.
0.004(0.10)
0.017(0.42)
0.004(0.10)
0.001(0.02)
0.009(0.22)
0.035(0.90)
Max. Typ.
Dimensions in inches and (millimeter)
RATING AND CHARACTERISTIC CURVES (CDBV1100-HF)
Reverse Voltage, (V)
Reverse Current, (μA)
Fig.3 - Typical Reverse Characteristics
0.01
1000.00
1.00
100.00
10.00
60200 40
0
Forward Voltage, (V)
0
0
1
10
100
1000
Ambient Temperature, (°C)
0.80.4 0.6
Power Dissipation, (mW)
Instantaneous Forward Current, (mA)
0.2
Fig.2 - Typical Forward Characteristics
Fig.1 - Power Derating Curve
Reverse Voltage, (V)
0
60
80
0 20 40
40
Fig.4 - Typical Capacitance or Diodes
Capacitance of Diode, (pF)
30
10
30
70
80 100
50
0
150
200
0 100
50
300
100
25 50 75 150
250
0.1 0.3 0.5 0.7
TJ=25°C
TJ=50°C
TJ=75°C
TJ=100°C
TJ=125°C
TJ=150°C
TJ=25°C
TJ=50°C
TJ=75°C
TJ=100°C
TJ=125°C
TJ=150°C
0.10
20
10
SMD Schottky Barrier Diodes
Page 2
REV:C
Comchip Technology CO., LTD.
Company reserves the right to improve product design , functions and reliability without notice.
QW-JB067
125
B C dD D2D1
SOD-323
SYMBOL
(mm)
(inch) 2.142 ± 0.039
1.50 + 0.10 54.40 ± 1.00 13.00 ± 0.50
178.00 ± 1.00
0.059 0.004 + 7.008 ± 0.039 0.512 ± 0.020
1.46 ± 0.05
0.057 ± 0.002
3.30 ± 0.05
0.130 ± 0.002
1.25 ± 0.05
0.049 ± 0.002
Reel Taping Specification
o
120
D1
D2
D
W1
A
4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.05
SYMBOL
(mm)
(inch) 0.158 ± 0.004 0.158 ± 0.004 0.079 ± 0.002
E F P P0P1W W1
1.75 ± 0.10
0.069 ± 0.004
3.50 ± 0.05
0.138 ± 0.002
SOD-323
12.30 ± 1.00
0.484 ± 0.039
8.00 + 0.30
- 0.10
0.315 + 0.012
- 0.004
SMD Schottky Barrier Diodes
Page 3
REV:C
Comchip Technology CO., LTD.
Company reserves the right to improve product design , functions and reliability without notice.
QW-JB067
10
Part Number Marking Code
CDBV1100-HF
Marking Code
XX
XX = Product type marking code
Standard Packaging
SOD-323
Case Type
3,000
REEL
( pcs )
Reel Size
(inch)
7
REEL PACK
= The marking bar indicates the cathode.
SMD Schottky Barrier Diodes
Page 4
REV:C
Comchip Technology CO., LTD.
Company reserves the right to improve product design , functions and reliability without notice.
QW-JB067
Suggested PAD Layout
1.The pad layout is for reference purposes only.
Note:
B
C
A
D
SIZE
(inch)
0.063
(mm)
1.60
0.63
0.83
0.024
0.033
2.86 0.112
B
C
D
A
SOD-323