KVR1600D3S4R11S/4GHC
4GB 1Rx4 512M x 72-Bit PC3-12800
CL11 Registered w/Parity 240-Pin DIMM
DESCRIPTION
This document describes ValueRAM's 512M x 72-bit (4GB)
DDR3-1600 CL11 SDRAM (Synchronous DRAM), registered w/
parity, 1Rx4 ECC memory module, based on eighteen 512M x
4-bit FBGA components. The SPD is programmed to JEDEC
standard latency DDR3-1600 timing of 11-11-11 at 1.5V. This
240-pin DIMM uses gold contact fingers. The electrical and
mechanical specifications are as follows:
FEATURES
•JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
•VDDQ = 1.5V (1.425V ~ 1.575V)
•800MHz fCK for 1600Mb/sec/pin
•8 independent internal bank
•Programmable CAS Latency: 11, 10, 9, 8, 7, 6
•Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
•8-bit pre-fetch
•Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
•Bi-directional Differential Data Strobe
•Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
•On Die Termination using ODT pin
•On-DIMM thermal sensor (Grade B)
•Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
•Asynchronous Reset
•PCB : Height 1.180” (30.00mm), double sided component
Document No. VALUERAM1068-001.A00 03/22/12 Page 1
Memory Module Specifi cations
SPECIFICATIONS
CL(IDD) 11 cycles
Row Cycle Time (tRCmin) 48.125ns (min.)
Refresh to Active/Refresh 160ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 35ns (min.)
Power (Operating) 2.361W*
UL Rating 94 V - 0
Operating Temperature 0o C to 85o C
Storage Temperature -55o C to +100o C
*Power will vary depending on the SDRAM and
Register/PLL used.
Continued >>
SDRAM SUPPORTED
Hynix (C-Die)
MODULE DIMENSIONS:
Document No. VALUERAM1068-001.A00 Page 2
(units = millimeters)
