SEMICONDUCTORS INC OE D Bf arseuso p000Ge4%e ? i T-27-23 Medium Power Transistors z TYPE ec MAXIMUM RATINGS HFE VCE(SAT) tt Cob COMPLE- NO. $ CASE Py te | Vceo Ic | Vce | max | tc min | max | MENTARY 2 (mw) | (a) | (Vp | min max [(mA) | (VE | tv) | tA) | (MH2) | (pF) TYPE gC 119 N |} T0-39 800 1 30 40 120 150 1 0.35 0.15 40 25 BC 139 BC 138 N | TO-39 800 1 30 35 - 100 10 1.5 1 40 25 _ BC 139 P 70-39 700 0.5 40 40 - 100 10 0.8 0.3 - 6+ | BC 119 BC 140 N TO-39 800 1 40 40 260# | 100 1 1 1 50 25 BC 160 BC 741 N TO-39 800 1 60 40 250# | 100 1 1 1 50 25 BC 161 BC 142 N TO-39 800 1 60 20 - 200 2 0.4 0.2 40 25 BC 143 BC 143 P TO-39 800 1 60 20 - 300 1 0.6 0.2 60 20 BC 142 BC 144 N TO-39 800 1 40 20 - 300 1 0.6 0.5 100+ 20 - BC 160 P TO-39 800 1 40 40 250# | 100 1 1 1 50 30 BC 140 BC 161 P TO-39 800 1 60 40 250# | 100 1 1 1 50 30 BC 141 BC 185 N | TQ-39 700 0.5 40 40 - 100 10 0.45 0.3 200 8 - BC 210 N | TO-18 450 0.7 25 20 120 150 1 - - 100 8 _ BC 211 N | TO-39 800 i 40 40 250# | 150 2 1 1 50 25 BC 313 BC 211A N | TO-39 800 1 60 40 250# | 150 2 1 1 50 25 BC 313A BC 215 P TO-18 400 0.5 30 40 300# | 150 10 0,9+ 6.5 150 8 - BC 223 N TO-92F 360 0.4 30 100 450# 50 2 0.3 0.1 100 10 ~ BC 231 P TO-92B 625 0.4 30 100 450 50 5 0.25 0.05 100 10 BC 232 BC 232 N TO-92B 625 0.4 30 100 450 50 5 0.3 0.1 100 10 BC 231 BC 284 N TO-18 500 0,2 40 100 600 10 10 1 0.1 50 20 _ BC 286 N TO-39 800 1 60 20 180 500 2 1 1 450+ iit | BC 287 BC 287 P TO-39 800 1 60 20 200 500 2 1 1 440+ 18+ | BC 286 BC 294 P TO-39 600 0.6 60 100 300 150 10 0.4 0.15 100 _ - BC 297 P TO-18 375 i 45 75 260# | 100 1 0.7 0.5 250+ 8+ | BC 377 BC 298 P TO-18 375 1 25 75 260# | 100 1 0.7 0.5 250+ 8+ | BC 378 BC 300 N TO-39 850 i 80 40 240# | 150 10 0.5 0.15 120+ 10+ - BC 301 N TO-39 850 1 60 40 2407 | 150 10 0.5 0.15 120+ 10+ | BC 303 BC 302 N TO-39 850 1 45 40 240# | 150 10 0.5 0.15 120+ 10+ | BC 304 BC 303 P TO-39 850 i 60 40 240# | 150 10 0.65 0.15 100+ 17+ | BC 301 BC 304 P TO-39 850 1 45 40 240# | 150 10 0.65 0.15 100+ 17+ | BC 302 BC 310 N TO-39 800 1 70 40 - 200 1 04 0.2 90+ 12+ | BC 311 BC 311 P TO-39 800 1 70 40 - 200 1 0.5 0,2 200+ 13+ } BC 310 BC 313 P TO-39 800 1 40 40 250# | 150 2 1 1 50 30 BC 211 BC 313A P TO-39 800 1 60 40 250# | 150 2 1 1 50 30 BC 211A BC 327 P TO-92F 625 0.8 45 100 630# | 100 1 0.7 0.5 100+ 14+ | BC 337 BC 328 P TO-92F 625 08 25 100 630# | 100 1 0.7 0.5 100+ 14+ | BC 338 BC 337 N TO-92F 625 0.8 45 100 630# | 100 1 0.7 0.5 100+ 10+ | BC 327 BC 338 N TO-92F 625 08 25 100 630# | 100 1 0.7 0.5 100+ 10+ | BC 328 BC 340 N TO-39 800 0.5 40 40 2504 50 5 0.4 0.15 100+ 6.5+ | BC 360 BC 341 N TO-39 800 0.5 60 40 160# 50 5 0.4 0.15 100+ 6.5+ | BC 361 BC 342 N TQ-39 800 1 60 20 - 500 10 0.8 0.3 100+ 20 BC 343 BC 343 P TO-39 800 1 60 20 - 500 10 0.8 0.3 100 20 BC 342 BC 344 N | T0-39 800 i 80 20 - 150 10 0.8 0.15 100 20 BC 345 BC 345 P TO-39 800 1 80 20 - 150 10 0.8 0.15 100 20 BC 344 BC 360 P 70-39 800 0.5 40 40 250# 50 5 0.4 0.15 250+ 6.5+ | BC 340 BC 361 P TO-39 800 0.5 60 40 1604 50 5 0.4 0.15 250+ 6.5+ | BC 341 BC 368 N | T0-92B8 g00 1 20 85 375 500 1 0.5 1 65+ - BC 369 BC 369 P TO-92B 800 1 20 85 375 500 1 0.5 1 65+ _ BC 368 BC 377 N TO-18 375 1 45 75 500 100 1 0.7 0.5 100 12 BC 297 BC 378 N | TO-18 375 1 25 75 s00# | 100 1 0.7 0.5 100 412 BC 298 BC 381 P TO-92F 625 0.2 25 60 - 25 5 0.25 0.05 100 10 - BC 387 N | T0-92F 310 0.6 30 40 300 100 1 05 0.1 200 10 BC 388 BC 388 P TO0-92F 310 0.6 30 40 300 100 1 0.5 0.1 200 10 BC 387 BC 431 N | TO-92F 625 0.8 60 63 240# | 100 1 0.7 0.5 100+ 12+ | BC 432 BC 432 Pp TO-92F 625 0.8 60 63 240# | 100 1 0.7 0.5 100+ 17+ | BC 431 BC 440 N | TO-39 1000 1 40 40 250# | 500 4 1 1 50 25 BC 460 # HEE groupings available + Typical value 43SEMICONDUCTORS INC OFE D i 3136450 O000/C%3 4 i l- A923 Medium Power Transistors > - TYPE e case MAXIMUM RATINGS Hee VcE(SAT) fr Cob COMPLE. NO. a Pg Ic VcEO Ic Vce | max Ic min max 2 (mw) | (Al (v) min max | (mA) | (V) (Vv) (A) | (MHz) | (pF) TYPE BC 441 N | TO-39 1000 1 60 40 250# | 500 4 1 1 50 25 BC 461 BC 445 N | TO-92F 625 0.3 60 50 4604 2 5 0.25 0.1 100 3+ | BC 446 BC 446 P TO-92F 625 0.3 60 50 460# 2 5 0.25 | 0.1 100 3+ 7 BC 445 BC 460 P TO-39 1000 1 40 40 250# | 500 4 1 1 50 25 BC 440 BC 461 P TO-39 1000 1 60 40 250# | 500 4 1 1 50 25 BC 441 BC 485 N | TO-92F 625 1 45 60 400# | 100 2 0.5 0.5 200+ 7+ | BC 486 BC 486 P TO-92F 625 i 45 60 400# | 100 2 0.5 0.5 150+ 9+ | BC 485 BC 487 N | TO-92F 625 1 60 60 400# | 100 2 0.5 0.5 200+ 7+ | BC 488 BC 488 P TO0-92F 625 1 60 60 400# | 100 2 0.5 0.5 150+ 9+ | BC 487 BC 489 N j} TO-92F 625 1 80 60 400# | 100 2 0.5 0.5 200+ 7+ | BC 490 BC 490 P | TO-92F 625 1 80 60 400# | 100 2 0.5 0.5 150+ 9+ | BC 489 BC 512 P TO-92F 300 0.2 45 60 300# 2 5 06 0.1 200 5+ - BC 513 P TO0-92F 300 0.2 25 80 4004 2 5 0.6 0.1 200 5+ - BC 514 P TO-92F 300 0.2 20 140 400# 2 5 0.6 0.1 200 5+ - BC 526 P TO-92A 625 0.2 50 60 s00# 2 5 0.6 Q.1 100 5 - BC 527 P TO-92A 625 1 60 40 400# | 100 1 0.7 0.5 100 15 BC 537 BC 528 Pp TO-92A 625 1 80 40 400# | 100 1 0.7 0.5 100 15 BC 538 BC 534 P TO-92A 625 0.5 80 50 - 10 1 0.25 0.1 50 6.5 BC 535 BC 535 N | TO-92A 625 0.5 80 50 - 10 1 0,25 0.1 50 6 BC 534 BC 537 N | TO-92A 625 4 60 40 4004 | 100 1 0.7 0.5 100 15 BC 527 BC 538 N | TO-92A 625 1 80 40 400# | 100 i 0.7 0.5 400 15 BC 528 BC 612 P TO-92F 300 0.2 70 60 300 2 5 0.72 2 200 10 BC 682 BC 612L P TO-92B 300 0.2 70 60 300 2 5 0.72 2 200 10 BC 682L BC 727 P TO-92A 625 1.5 40 63 630# | 100 1 0.7 0.5 40 20 BC 737 BC 728 P TO-92A 625 1.5 25 63 630# | 100 1 0.7 0.5 40 20 BC 738 BC 737 N | TO-92A 625 1.5 40 63 630# | 100 1 0.7 0.5 40 20 BC 727 BC 738 N | TO-92A 625 1.5 25 63 630# | 100 1 0.7 0.5 40 20 BC 728 BCW 34 N |} TO-18 360 0.6 45 100 350 10 5 0,1 0.01 150 6 BCW 35 BCW 35 P TO-18 360 0.6 45 100 350 10 5 0.1 0.01 150 6 BCW 34 BCW 36 N | TO-92F 360 06 45 100 350 10 5 0.1 0.01 160 6 BCW 37 BCW 37 P TO-92F 360 0.6 45 100 350 10 5 0.1 0.01 150 6 BCW 36 BCW 73 N j TO-18 450 0.8 32 100 630# | 100 1 0.7 0.5 100 12 ~ BCW 74 N | TO-18 450 0.8 45 100 630# | 100 1 0.7 0.5 100 12 - BCW 75 P TO-18 450 08 32 63 400# | 100 1 0.7 0.5 100 18 = BCW 76 P TO-18 450 0.8 45 63 400# | 100 1 0.7 0.5 100 18 - BCW 77 N { TO-39 870 0.8 32 100 630# | 100 1 0.7 0.5 100 412 - BCW 78 N {| TO-39 870 0.8 45 100 6307 | 100 1 07 0.5 100 12 ~ BCW 79 P TO-39 870 08 32 63 400# | 100 1 0.7 0.5 400 18 _ BCW 80 P TO-39 870 08 45 63 400# | 100 1 0.7 0.5 100 18 - BCW $0 N | TO-92F 610 0.8 40 100 400# | 150 2 0.25 0.15 100+ 15 BCW 92 BCW SOK N | TO-92F* 750 0.8 40 100 400# | 150 2 0.25 | 0.15 100+ 15 BCW 92K BCW 91 N | TO0-92F 610 08 60 100 300# | 150 2 0.25 | 0.15 100+ 15 BCW 93 BCW 91K N TO-92F* 750 08 60 100 300# | 150 2 0.25 | 0.15 120+ 15 BCW 93K BCW 92 P TO-92F 610 0.8 60 100 300# | 150 2 0.25 | 0.15 135 16 BCW 90 BCW 92K P TO-92F* 750 0.8 60 100 300# | 150 2 0.25 | 0.15 135 15 BCW 90K BCW 93 P TO-92F 610 0.8 60 100 300# | 150 2 0.25 0.15 135 10+ | BCW91 BCW 93K P TO-92F* 750 08 60 100 3007 | 150 2 0.25 0.15 135 10+ | BCW9IK BCW 94 N TO-92F 540 04 40 100 400# 50 2 0.25 | 0.05 70+ 8 BCW 96 | BCW 94K N TO-92F* 700 04 40 100 400# 50 2 0.25 0.05 70+ 8 BCW 96K BCW 95 N TO-92F 540 0.4 60 100 300# 50 2 0.25 | 0.05 70+ 8 BCW 97 BCW 95K N TO-92F* 700 04 60 100 300# 50 2 0.25 0.05 70+ 8 BCW 97K BCW 96 P TO-92F 540 0.4 40 100 300# 50 2 0.25 0.05 135 10 BCW 94 * With X-67 heat sink #HeE groupings available + Typical value 44SEMICONDUCTORS INC OFE D B araunso ooooe94 a i 7- AP. 23 Medium Power Transistors z TYPE & case MAXIMUM RATINGS HrE VCEI(SAT) fr Cob COMPLE. NO. a Pg tc VcEO ic VcE | max le min max 2 (mw) | {A} (vj min max | (mAb | (vd | (Vv) | (A) fT (MHz) | (pF) TYPE BCW 96K P TO-92F* 700 0.4 40 100 300# 50 2 0.25 0.05 135 10 BCW 94K BCW 97 P TO-92F 540 04 40 100 300# 50 2 0.25 0.05 135 10 BCW 95 BCW 97K P TO-92F* 540 04 60 100 300# 50 2 0.25 | 0.05 135 10 BCW 95K BCX 25 N | TO-92F 350 0.2 60 70 400 10 5 0.25 0.1 100 6 BCX 26 BCX 26 P TO-92F 350 0.2 60 70 400 10 5 0.25 | 0.1 100 6 BCX 25 BCX 40 N | TO-39 1000 2 80 40 250 500 4 i 0.5 50 - _ BCX 45 N | TO-92F 625 i 45 50 - 100 2 0.5 0.5 100 12 - BCX 46 PB ) TO-92F 625 1 45 50 - 100 2 0.5 0.5 60 1S - BCX 47 N | TO-92F 625 1 60 50 - 100 2 0.5 0.5 100 12 - BCX 48 P TO-92F 625 1 60 50 - 100 2 0.5 0.5 60 15 ~ BCX 49 N | TO-92F 625 1 80 50 100 2 0.5 0.5 100 12 - BCX 50 P TO-92F 625 1 80 69 - 100 2 0.5 0.5 60 15 - BCX 60 N | TO-39 1000 2 80 40 250 500 4 1 0.5 50 - - BCX 73 N | TO-92F 625 08 32 100 630# | 100 1 14 0.5 100 12 - BCX 74 N | TO-92F 625 08 45 100 630# | 100 1 14 0.5 100 42 - BCX 75 P TO-92F 625 0.8 32 100 630# | 100 1 14 0.5 100 18 - BCX 76 P TO-92F 625 0.8 45 100 630# | 100 1 14 0.5 100 18 - BD 370A P TO-237A 750 1.5 45 40 400# | 100 1 0.7 1 50 30 BD 371A BD 370B P TO-237A 750 1.5 60 40 400# | 100 1 0.7 1 50 30 BD 371B BD 370C P TO-237A 750 1.5 80 40 400# | 100 1 0.7 1 50 30 BD 371C BD 371A N | TO-2374 750 1.5 45 40 400# | 100 1 0.7 i 50 30 BD 370A BD 371B N | TO-237A 750 1.5 60 40 400# | 100 1 07 1 50 30 BD 370B BD 371C N | TO-237A 750 1.5 80 40 400# | 100 1 0.7 1 50 30 BD 370C BER 10 N | TO-39 800 - 40 60 120 150 10 0.22 0.15 250 8 - BFR 11 N TO-18 400 - 40 60 120 150 10 0.22 0.15 250 8 - BFR 18 N TO-18 500 0.5 55 60 180 180 1 0.25 0.15 60 20 _ BFR 19 N | TO-39 800 1 35 40 120 150 1 0.25 0.15 60 20 - BFR 20 N TO-39 800 1 35 90 450 160 1 0.25 | 0.15 60 20 - BFR 21 N | TO-39 800 1 70 40 - 150 1 0.25 | 0.15 60 20 _ BFR 22 N | TO-39 50004 1 65 40 120 150 10 0.15 0.15 - 15 - BFR 23 P TO-39 70004 1 65 40 140 150 10 0.65 0.15 - 30 - BFR 24 P TO-39 70004 1 40 50 250 150 10 1.4 0.15 - 30 - BFR77 N j] TO-39 600 1 80 40 120 150 10 0.5 0.16 50 15 - BFS 92 P TO-39 300 0.2 60 30 - 150 10 0.25 0,01 40 20 - BFS 93 P TO-39 800 1 60 70 - 150 10 0.35 0.15 40 20 - BFS 94 P TO-39 800 1 40 40 - 150 10 0.2 0.15 40 20 - BFS 95 P TO-39 800 1 35 70 - 150 10 0.2 0.15 40 20 - BFT 29 N TO-18 360 1 80 50 250 100 40 0.95 0.5 100 10 - BFT 30 N ] TO-18 360 1 60 75 250 100 10 0.75 0.5 100 10 - BFT 31 N TO-18 360 1 50 100 300 100 10 0.75 0.5 100 10 - BFT 39 N | TO-39 800 1 80 BO 250 100 10 16 1 100 10 BFT 79 BFT 40 N | TO-39 800 1 60 75 250 100 10 1.0 1 100 70 BFT 80 BFT 41 N | TO-39 800 1 50 100 300 100 10 1.0 1 100 10 BFT 81 BFW 24 N | TO-39 800 1 60 40 120 .150 1 1.0 1 60 25 - BFW 25 N | TO-39 800 1 40 100 300 150 1 10 1 70 25 - BFW 26 N | TO-39 800 1 40 40 120 150 1 1.0 1 60 25 - BFW 29 N | TO-39 600 04 30 45 - 6 16 0.5 0.15 40 25 - BFW 31 P TO-18 500 0.7 30 70 - 100 10 0.4 0.1 - 12 - BFW 32 N |} TO-18 500 0.7 30 700 = 100 10 0.4 0.1 - 12 - BFW 33 N | TO-39 800 - 80 40 120 150 10 5 0.15 50 16 - BFW 34 N | TO-39 600 0.2 30 45 - 6 15 0.5 0.05 70 10 - BFW 35 N | TO-39 600 0.2 30 80 150 6 15 0.5 0.05 70 10 ~ BFW 80 N | TO-39 600 0.2 30 90 - 6 15 0.5 0.05 70 10 - * With -67 heat sink #HE groupings available A Tc = 25cSEMICONDUCTORS INC OFe Df) azzeb50 ooonpats 2 ff 7-27-23 Medium Power Transistors TYPE : MAXIMUM RATINGS Hre VCE(SAT) ff Cob COMPLE. NO. a CASE Pa tc | VcEo tc | Vee | mex tc min | max | MENTARY 2 (mw) | (A) (v) min max | (mA) | (Vif (Vv) | (Ab | (MHz) | (pF) TYPE BFX 29 P {T7039 600 0.6 60 60 125 10 10 0.4 0.15 100 12 ~ BFX 30 P TO-39 600 0.6 65 50 200 10 0.4 - - 100 12 - BFX 35 P TO-18 360 - 40 80 - 10 10 0.3 0.05 200 10 - BFX 38 P TO-39 800 1 55 8 - 100 5 0.5 0.5 100 20 - BFX 39 P | TO-39 800 1 55 40 - 100 5 0.5 0.5 100 20 - BFX 40 P TO-39 800 1 75 40 - 100 5 05 0.5 100 20 - BFX 41 P | TO0-39 800 1 75 8 - 100 5 0.5 0.5 100 20 - BFX 68 N | 70-39 700 - 30 100 300 150 10 1.5 0.15 70 25 - BFX 69 N | T0-39 800 - 30 40 120 150 10 1.5 0.15 60 25 ~ BFX 69A N } TO-39 800 - 40 40 - 160 10 1.2 0.5 60 20 - BFX 74 P | TO-39 600 _ 35 30 690 150 10 1.5 0.15 60 45 - BFX 74A P TO-39 800 ~ 60 30 - 150 10 0.3 0.15 100 20 - BFX 8&4 N | T0-39 800 1 60 30 - 150 10 0.35 0.15 50 12 - BFX 85 N | T0-39 800 1 60 70 150 10 0.35 j} 0.15 50 12 ~ BFX 86 N | TO-39 800 1 35 7 + 150 10 0.35 } 0.15 50 12 - BFX 87 P TO-39 600 06 50 40 - 160 10 04 0.15 100 12 - BFX 88 P | TO-39 600 06 40 40 - 150 10 04 0.15 100 12 - BFX 94 N 1TO-18 500 0.8 30 40 120 150 10 16 0.5 250 8 - BFX 94A N | TO-18 400 08 30 35 - 10 10 0.22 0.15 250 8 - BFX 95 N | TO-18 500 08 30 100 300 160 10 16 0.5 250 8 - BFX 95A N | TO-18 400 0.8 30 100 300 160 10 0.22 | 0.15 250 8 - BFX 96 N | T0-39 500 0.8 30 40 120 150 10 1.6 0.5 250 8 - BFX S6A N 1|TO-39 800 0.8 30 40 120 150 10 0.22 | 0.15 250 8 - BFX 97 N | T0-39 500 0.8 30 100 300 150 10 16 0.5 250 8 - BFX 97A N | T0-39 800 08 30 100 300 160 10 0.22 | 0.15 260 8 - BFY 33 N | TO-39 800 0.5 24 40 - 150 10 1.5 0.15 40 20 - BFY 34 N | TO-39 800 0.5 30 40 120 150 10 15 0.15 60 25 - BFY 40 N |} TO-33 800 08 30 40 - 10 10 1.85 0.15 - 20 - BFY 41 N | TO-39 800 0.6 60 35 - 50 10 5 0.05 - - - BFY 46 N | T0-39 26004 | 0.5 30 100 300 160 10 1.5 0.15 - - - BFY 60 N |TO-39 800 1 35 30 112+ | 150 10 0.2 0.15 60 12 - BFY 51 N | TO-39 800 1 30 40 - 150 10 0.35 | 0.15 50 12 ~ BFY 52 N [T0-39 800 1 20 60 - 150 10 0.35 | 0.15 50 12 - BFY 53 N TO-39 800 1 20 30 _ 150 10 0.35 0.15 50 - ~- BFY 55 N |TO-39 800 1 35 40 - 150 6 0.2 0.15 60 _ ~ BFY 56 N | TO-39 800 1 45 30 (150 150 1 1.2 1 40 25 - BFY 56A N | TO-39 800 1 55 40 120 150 1 1.2 1 60 25 - BFY 64 P |TO-39 700 - 40 so - 10 10 1.8 0.5 200 10 - BFY 67 N 1TO-39 800 0.5 30 40 120 150 10 1.5 0.15 60 25 - BFY 68 N | TO-39 800 05 30 100 300 150 10 15 0.15 70 25 - BFY 72 N |T0-39 800 - 28 40 1560 150 10 0.7 0.5 250 8 _ BFY 94 P 1|TO-39 30004 ~ 40 40 - 0.1 10 0.4 0.05 100 20 - BSV 15 P TO-39 50004 1 40 40 250# | 100 1 1 0.5 50 30 - BSV 16 P TO-39 50004 1 60 40 250# | 100 1 1 0.5 60 30 - BSV 17 P TO-39 50004 1 80 40 160# | 100 1 1 0.5 50 25 - c 055 P | TO0-92A 800* 1.5 20 50 360# | 100 1 04 0.5 120+ - C 066 Cc Os5P P TO-237A 750 1.5 20 50 360# | 100 1 0.4 0.5 120+ - C O66P Cc 066 N | TO-92A so0o* 15 20 50 360# | 100 1 04 0.5 120+ - Cc O55 Cc O66P N | TO-237A 760 15 20 50 360# | 100 1 0.4 0.5 120+ - Cc OS55P c 165 P | T0-92A 00* 2 25 50 360# | 100 1 0.45 1 120+ - Cc 166 Cc 155P P TO0-237A 750 2 25 50 360# | 100 1 0.45 1 120+ - C 166P c 166 N 4T092A 800* 2 25 50 360# | 100 1 0.45 1 120+ - Cc 185 c 166P N | TO-237A 750 2 25 60 360# | 100 1 0.45 1 120+ - Cc 1S5P c 168 N | 7T0-928 625 3 7 300. 10 1 06 2 120+ 40+ - 4Tc= 25C * With x-67 heat sink #HEE groupings available + Typical value 46SEMICONDUCTORS INC OFE D Bj a13e450 oooo2%b 4 i 7 -29-2/ Medium Power Transistors z TYPE z MAXIMUM RATINGS HFE VcE(SAT) ft Cob COMPLE- NO. $s CASE Pa ic | VcEo lc | Vce | max | tc min max | MENTARY . 9 (mW) | {A} (Vi | min max [mAb | (VE [ tv) | CAD | (MHz) | (pF) TYPE c 169 N | TO0-928 625 3 9 180 360 100 1 0.4 1 100+ 40+ - C 266 N | TO-92A 625 2 60 45 - 100 10 05 0.5 - _ - C 266P N | TO-237A 760 2 60 25 O- 1 10 0.5 0.5 - - - Cc 855 P | TO-92A 625* 1.6 60 60 240# | 100 2 0.5 0.5 50 25 C 366 C 866 N | TO92A 625* 1.6 60 50 240% | 100 2 05 0.5 50 25 Cc 855 CS 9012 P | TO-92A 625 - 28/12 64 202# 50 1 1 0,25 - - cS 9013 N | TO-92A 625 - 25/12 64 202# 50 1 1 0.25 - - - CX 806 N | TO-92A 500 0.5 40 50 360# 50 1 05 0.25 80 8 CX 956 CX 908 N | TO-92A 625* 1 40 80 360# | 100 1 05 0.5 60 18 CX 958 CX 956 P TO-92A 500 0.5 40 50 360# 60 1 0.5 0.25 80 8 CX 906 CX 958 P | TO-92A 625* 1 40 80 360# | 100 1 0.5 0.5 60 18 CX 908 KM 904 N | TO-92A 500 05 20 64 246# 50 1 0.6 0.15 200+ 48+ | KM 905 KM 905 P TO-92A 500 0.5 20 64 246# 50 1 0.6 0.15 120+ 9+ | KM 904 KM 934 N | T0924 500 0.5 30 80 3604 50 1 0.6 0.15 180+ 4+ | KM 935 KM 935 P TO-92A 500 0.5 30 80 360# 50 1 0.6 0.15 180+ 5+ | KM 934 MA 8001 N | TO0-39 800 0.5 30 300 == 150 10 0.5 0.15 100 12 - MA 8002 N | TO-39 800 0.5 80 40 200 150 10 0.3 0.15 100 10 _ MA 8003 N | TO0-39 . 800 0.5 60 100 350 7150 10 03 0.15 100 10 - MPS 3702 P TO-92A 360 0.2 25 60 300 50 5 0.25 | 0.05 100 12 MPS 3704 MPS 3703 P TO92A 360 0.2 30 50 150 50 5 0.25 | 0.05 100 12 MPS 3706 MPS 3704 N | TO-92A 360 0.8 30 100 300 50 2 0.6 0.1 100 12 MPS 3702 MPS 3705 N | TO-92A 360 0.8 30 50 150 50 2 0.8 0.1 100 12 MPS 3702 MPS 3706 N | TO-92A 360 0.8 20 30 6600 50 2 1 0.1 100 12 MPS 3703 MPS 4354 P | TO-92A 625 1 60 50 500 10 10 0.5 0.5 100 30 PN 3567 MPS 4355 P TO-924 625 1 60 100 400 10 10 0.5 0.5 100 30 PN 3569 MPS 4356 P TO-92A 625 1 80 60 250 10 10 0.5 0.5 100 30 PN 3568 MPS 6530 N | TO-92A 500 06 40 40 120 100 1 0.5 0.1 250+ 5 MPS 6533 MPS 6531 N | TO-92A 500 06 40 90 270 100 1 03 0.1 250+ 5 MPS 6534 MPS 6532 N } TO-92A 500 06 30 30,00 100 1 0.5 0.1 250+ 5 MPS 6535 MPS 6533 P TO-92A 500 0.6 40 40 120 100 1 0.5 0.1 250+ 6 MPS 6530 MPS 6534 P TO0-92A 500 06 40 90 270 100 1 0.3 0.1 250+ 6 MPS 6531 MPS 6535 P TO0-92A 500 06 30 300 100 1 0.5 0.1 250+ 6 MPS 6532 MPS 6560 N | TO-92A 625 0.6 25 50 200 500 1 0.5 0.5 60 30 MPS 6562 MPS 6561 N | TO-92A 625 06 20 50 200 350 1 0.5 0.35 60 30 MPS 6563 MPS 6562 P TO-92A 625 0.6 25 50 200 500 1 0.5 0.5 60 30 MPS 6560 MPS 6563 P | TO92A 625 0.6 20 50 200 350 1 0.5 0.35 60 30 MPS 6561 MPS 6591 N | TO92A 625 0.25 50 40 - 10 10 0.6 0.01 60 12 - MPS 8000 N | TO-924 625 0.5 60 300 = 100 2 0.3 0.1 - - - MPS 9416 N | TO-92A 625 06 18 50 300# | 350 1 0.55 | 0.5 - - MPS 9466 MPS S9416A| N | TO-92A 625 1 18 50 300# | 350 1 0.55 | 0.5 300+ 5.5+ | MPS 9466A MPS 9417 N | TO-92A 625 0.6 25 50 300# | 350 1 0.55 | 0.5 - - MPS 9467 MPS 9417A| N | TO-92A 625 1 25 50 300# | 350 1 0.55 | 0.5 300+ 5.5+ | MPS 9467A MPS 9418 N | TO-92A 625 1.6 25 80 350# | 350 4 06 1 300+ 6+ | MPS 9468 MPS 9466 P TO-92A 625 06 18 60 300# | 350 1 0.55 | 0.5 - - MPS 9416 MPS 9466A|} P | TO-92A 625 1 18 50 300# | 350 1 0.55 | 0.5 300+ 12+ | MPS 9416A MPS 9467 P TO-92A 625 0.6 25 50 300# | 350 1 0.55 0.5 300+ - MPS 9417 MPS 9468 P TO-92A 625 1.5 25 80 35607 | 350 4 0.6 1 200+ 18+ | MPS 9418 MPS 9467A;} P TO-92A 625 1 25 50 300# | 350 1 0.55 0.5 300+ 12+ | MPS 9417A MPSA 05 N | TO-92A 625 0.5 60 6s - 100 1 0.25 | 0.1 50 20 MPSA 55 MPSA 06 N | TO92A 625 0.6 80 50 100 1 0.25 | 0.1 50 20 MPSA 56 MPSA 55 P | TO-92A 625 05 60 50 - 100 1 0.25 | 0.1 100 20 MPSA 05 MPSA 56 P TO-92A 625 08 80 s0 - 100 1 0.25 | 0.1 100 20 MPSA 06 MPSD 05 N | TO-92A 350 0.6 25 60 - 50 5 0.5 01 100 - MPSD 55 MPSD 55, P TO-92A 350 0.5 25 50 - 50 5 0.5 0.1 100 - MPSD 05 * With x-67 heat sink = 800 mW = #HFeE groupings available + Typical valueSEMICONDUCTORS INC O8 D ff 8136650 oooo257 5 &f T- 2F-2/ Medium Power Transistors z TYPE =z MAXIMUM RATINGS HrE VcCEISAT) fr Cob COMPLE. NO. 5 CASE Pg Ic VCEO lc VcE | max Ic min max 2 (mv) | (A) (Vv) min max | (mA) | (V) | (Vv) | (A) | (MHz) | (pF) TYPE MSB 492 P | TO-92A 625 2 25 80 360# | 200 1 0.5 1 100+ 28+ - PN 2221 N | TO-92A 500 08 30 40 120 160 10 16 0.5 250 8 PN 2806 PN 2221A N | TO-92A 500 08 40 40 120 160 10 1 0.5 250 8 PN 2906A PN 2222 N | TO92A 600 08 30 100 300 150 10 16 0.5 250 8 PN 2907 PN 2222A N | T0924 500 08 40 100 300 150 10 1 0.5 300 8 PN 2907A PN 2906 P | TO-92A 400 0.6 40 40 120 160 10 1.6 0.5 200 8 PN 2221 PN 2906A P TOW2A 400 0.6 60 40 120 160 10 1.6 0.5 200 8 PN 2221A PN 2907 P | TO-92A 400 0.6 40 100 300 150 10 1.6 0.5 200 8 PN 2222 PN 2907A P TO-92A 400 0.6 60 100 300 150 10 1.6 0.5 200 8 PN 2222A PN 3567 N | TO-92A 625 1 40 40 120 150 1 0.25 [0.15 60 20 MPS 4354 PN 3568 N | TO-92A 625 1 60 40 120 150 1 0.25 | 0.15 60 20 MPS 4356 PN 3569 N | TO-92A 625 1 40 100 300 150 1 0.25 | 0.15 60 20 MPS 4355 2N 656 N jTO-39 800 0.6 60 30 4690 200 10 4 0,2 40 20 - 2N 697 N | TO-39 600 0.5 40. 40 120 150 10 15 0.15 50 35 - 2N 699 N | TO-39 600 1 80. 40 120 150 10 5 0.15 50 20 - 2N 699A N |} TO-39 800 1 80- 40 120 150 10 5 0.15 50 20 - 2N 6998 N | TO-39 870 1 80> 40 120 150 10 5 0.15 60 15 - 2N 1132 P TO-39 600 0.6 35 300690 160 10 1.5 0.15 60 45 - 2N 1420 N | T0O-39 600 1 30 100 300 150 10 1.5 0.15 50 35 - 2N 1507 N | TO39 600 1 30+ 100 300 150 10 1.6 0.15 50 35 - 2N 1566 N | T0-39 600 0.1 60 80 200 5 5 1 0.01 60 10 - 2N 1613 N | TO-39 800 0.5 50 40 120 160 10 1.5 0.15 60 25 - 2N 1613A N | TO-39 1000 0.6 50 40 120 160 10 1 0.15 60 25 - 2N 1613B N |TO39 1000 0.5 55- 40 120 150 10 0.2 0.15 60 10 - 2N 1711 N | TO-39 800 1 50+ 100 300 150 10 1.5 0.15 70 25 - 2N 1711A N | TO0-39 1000 1 50 - 100 300 150 10 1 0.15 70 25 - 2N 1711B N | TO39 1000 1 55 + 100 300 150 10 0.2 0.15 70 10 - 2N 1889 N {TO-39 800 1 60 40 120 150 10 5 0.15 50 15 ~ 2N 1890 N | TO-39 800 1 60 100 300 150 10 5 0.16 60 15 ~ 2N 1893 N | T0-39 800 0.5 80 40 120 150 10 5 0.15 50 15 ~ 2N 1973 N | TO-39 800 1 80< 7 - 10 10 1.2 0.05 60 15 - 2N 1974 N | TO0-39 800 1 80. Ki 10, 10 1.2 0.05 50 15 - 2N 1975 N | TO-39 800 1 80 15 + 10 10 1.2 0.05 40 15 - 2N 1983 N | TO-39 600 1 25 80 240 5 5 0.25 | 0.005 40 45 - 2N 1984 N | T039 600 1 25 40 120 5 - 5 0.25 | 0.005 40 4s - 2N 1985 N |T0-39 600 1 25 20 80 5 5 - - 40 45 - 2N 1986 N | T039 600 0.3 25 60 240 150 10 1.5 0.15 40 35 - 2N 1987 N | TO-39 600 0.3 25 20 680 160 10 1.6 0.15 40 35 - 2N 1988 N | TO-39 600 1 45 35 120 30 10 2 0.03 40 20 - 2N 1989 N ]T039 600 1 45 20 260 30 10 2 0.03 40 20 - 2N 2017 N | TO-39 1000 1 60 50 200 200 10 2 0.2 - - - 2N 2049 N | T039 800 0.5 50 100 300 160 10 04 0.01 50 25 - 2N 2102 N |TO-39 1000 1 65 40 120 150 10 0.5 | 0.15 60 10 2N 4036 2N 2192 N |TO39 800 1 40 100 300 150 10 0.35 | 0.15 50 20 - 2N 21924 N | TO-39 800 1 40 100 300 150 10 0.25 | 0.15 50 20 - 2N 2192B N | T0-39 800 1 40 100 300 150 10 0.18 | 0.15 50 20 - 2N 2193 N | TO-39 800 1 50 40 120 150 10 0.35 | 0.15 50 20 - 2N 2193A N | TO-39 800 1 50 40 120 160 10 0.25 | 0.15 60 20 - 2N 21938 N | TO-39 800 1 50 40 120 150 10 0.18 | 0.15 50 20 - 2N 2195 N | TO-39 800 1 25 2 150 10 035 | 0.15 50 20 -_ 2N 2195A N | 70-39 800 1 25 200 - 150 10 0.25 | 0.15 50 20 - 2N 21958 N | T0-39 800 1 25 20 - 150 10 0.18 | 0.15 50 20 - * With x-67 heatsink #HFE groupings available "VoeR + Typical value 48SEMICONDUCTORS INC OSE D B erseeso goooe74 & i 7-29-23 Medium Power Transistors E TYPE & CASE MAXIMUM RATINGS Hre VcE(SAT) ft Cob COMPLE NO. a Pa Ic | Vceo lc | Voce | max Ic min max | MENTAR 2 (mw) (A) (Vv) min) max | (mA) | (V) (v) (A) (MHz) | (pF) TYPE 2N 2218 N | T0-39 800 0.8 30 40 120 160 10 0.4 0.15 250 8 - 2N 22184 N } T0-39 800 0.8 40 40 120 150 10 1.0 0.5 250 8 - 2N 2219 N | TO-39 800 08 30 100 300 160 10 0.4 0.15 250 8 - 2N 2219A N | TO-39 800 0.8 40 100 300 150 10 1.0 0.5 250 8 - 2N 2221 N | TO-18 500 0.8 30 40 120 160 10 04 0.15 250 8 - 2N 2221A N TO-18 500 0.8 40 40 120 150 10 1.0 0.5 250 8 - 2N 2222 N | TO-18 500 08 30 100 300 150 10 0.4 0.15 250 8 - 2N 2222A N TO-18 500 08 40 100 300 150 10 1.0 0.5 300 8 - 2N 2237 N | TO-39 600 0.5 20 40 125 100 1 0.25 0.1 100 35 - 2N 2243 N T0-39 800 1 80 40 120 150 10 0.25 0.15 50 15 - 2N 2243A N | TO-39 800 1 80 40 120 150 10 0.25 0.15 50 15 - 2N 2297 N | TO-39 800 1 35 40 120 150 4 0.2 0.15 60 12 - 2N 2303 P TO-39 600 0.5 35 75 200 150 10 15 0.15 60 45 _ 2N 2309 N_ | TO-39 679 0.5 30 25 125 0.2 4 - - 40 25 - 2N 2380 N_ | TO-39 600 0.5 40 20 120 150 5 1.3 0.15 100 14 - 2N 2380A N TO-39 600 0.5 40 20 6120 150 5 4.3 0.15 100 14 _ 2N 2405 N | TO-39 1000 1 90 60 200 150 10 0.5 0.15 50 15 - 2N 2479 N | TO-39 600 0.5 40 30 120 150 1.5 0.85 0.15 150 14 - 2N 2800. P TO-39 800 0.8 35 30 30 150 10 0.4 0.15 120 25 - 2N 2801 P TO-39 800 08 35 75 225 150 10 0.4 0.15 120 25 - 2N 2837 P TO-18 500 0.8 35 30 90 150 10 0.4 0.15 120 25 - 2N 2838 P TO-18 500 0.8 35 75 225 150 10 04 0.15 120 25 _ 2N 2868 N TO-39 800 1 40 40 120 150 10 0.25 0.15 50 20 - 2N 2897 N | TO-18 500 1 45 50 200 150 10 1 0.15 100 15 - 2N 2904 P TO-39 600 0.6 40 40 120 150 10 0.4 0.15 200 8 - 2N 2905 P TO-39 600 0.6 40 100 6300 150 10 1.6 0.5 200 8 - 2N 2905A P 70-39 600 0.6 60 100 300 150 10 1.6 0.5 200 8 - 2N 2906 P TO-18 400 0.6 40 40 120 150 10 04 0.15 200 8 - 2N 2906A P TO-18 400 0.6 60 40 120 150 10 16 0.5 200 8 - 2N 2907 P TO-18 400 0.6 40 100 300 150 10 1.6 0.5 200 8 - 2N 2807A P TO-18 400 0.6 60 100 6300 150 10 16 0.5 200 8 - 2N 2927 P TO-39 800 0.5 25 30 =130 50 i 0.25 0.05 400 20 - 2N 2958 N TO-39 600 0.6 20 40 120 150 10 0.5 0.15 250 8 _ 2N 2959 N TO-39 600 0.6 20 100 300 150 10 0.5 0.15 250 8 - 2N 3019 N TO-39 800 1 80 100 300 150 10 0.5 0.5 4100 12 2N 4033 2N 3020 N | TO-39 800 1 80 40 120 150 10 0.5 0.5 80 12 2N 4031 2N 3036 N TO-39 800 1 80 50 150 150 10 0.25 0.18 50 15 - 2N 3053 N TO-39 1000 0.7 40 50 250 150 10 1.4 0.15 100 15 2N 4037 2N 3053A N | TO-39 1000 0.7 60 50 250 150 10 0.3 0.15 100 15 - 2N 3072 P TO-39 800 0.5 60 30 130 50 1 1 0.3 130 10 - 2N 3073 P TO-18 360 0.5 60 30 130 50 1 1 0.3 130 10 - 2N 3081 P TO-39 600 0.6 50 30 90 160 10 0.3 0.15 150 13 - 2N 3107 N TO-39 800 1 60 100 300 150 10 1 1 70 20 2N 4032 2N 3108 N TO-39 800 1 60 40 120 150 10 0.25 0.15 60 20 2N 4030 2N 3109 N | TO0-39 800 1 40 100 300 160 10 1 1 70 25 2N 4033 2N 3110 N TO-39 goo 1 40 40 120 150 10 0.25 0.15 60 25 - 2N 3115 N TO-18 400 0.6 20 40 120 150 10 0.5 0.15 250 8 - 2N 3116 N | TO-18 400 06 20 100 300 150 10 0.5 0.15 250 8 - 2N 3120 P TO-39 800 0.5 45 30 130 50 1 1 0.5 130 10 - 2N 3121 P TO-18 360 0.5 45 30 = 130 50 1 1 0.5 130 10 - 2N 3133 P TO-39 600 0.6 35 40 120 150 10 06 0.15 200 10 - 2N 3134 P TO-39 600 06 35 100 300 150 10 0.6 0.15 200 10 - 2N 3135 P TO-18 400 0.6 35 40 120 150 10 0.6 0.15 200 10 _ 2N 3136 P TO-18 400 0.6 35 100 300 150 10 0.6 0.16 200 10 - 2N 3252 N TO-39 1000 1 30 30 90 500 1 0.5 0.5 200 12 -SEMICONDUCTORS INC QFE D i 41356650 O000e99 o i T-27-2/ Medium Power Transistors E MAXIMUM RATINGS Vv, TYPE z Hre CE(SAT) ft Cob COMPLE- NO. CASE Py lc VcEO Ic Voce | max Ic min max | MENTARY (mW) | (A) WV) min max |(mA) | (VP | (Vv) | (A) | (MHz) | (pF) TYPE 2N 3253 N 70-39 1000 1 40 25 75 500 1 06 0.5 175 12 - 2N 3289 N T0-39 800 0.5 30 40 120 150 10 06 0.5 250 8 - 2N 3300 N },TO-39 800 0.5 30 100 300 150 10 0.6 0.5 250 8 - 2N 3301 N |} TO-18 360 0.5 30 40 120 150 10 06 0.5 250 8 - 2N 3302 N TO-18 360 0.5 30 100 300 150 10 06 0.5 250 8 - 2N 3326 N TO0-39 800 0.8 45 40 120 150 10 16 0.5 250 8 - 2N 3402 N | TO-92B* 560* 0.5 25 75 225 2 45 03 0.05 - - - 2N 3403 N TO-92B* 560* 0.5 25 180 540 2 45 0.3 0.05 - - - 2N 3404 N TO-92B* 560* 0.5 50 75 225 2 45 03 0,05 - - - 2N 3405 N | TO0-92B s560* 0.5 50 180 540 2 45 0.3 0,05 - - - 2N 3414 N TO-92B* 360 0.5 25 75 225 2 45 0.3 0.05 - - - 2N 3415 N TO-92B* 360 0.5 25 180 540 2 4.5 0.3 0.05 - - - 2N 3416 N | TO-928* 360 0.5 50 75 225 2 4.5 0.3 0.05 - - - 2N 3417 N | TO-92B* 360 0.5 50 180 540 2 45 03 0.05 - - - 2N 3444 N TO-39 1000 1 50 20 60 500 1 0.6 0.5 175 12 - 2N 3502 P TO-39 800 0.6 45 100 300 150 10 1 03 200 8 - 2N 3503 P TO-39 800 0.6 60 100 300 150 10 1 0.3 200 8 - 2N 3504 P TO-18 400 06 45 100 300 150 10 1 0.3 200 8 - 2N 3505 P TO-18 400 0.6 60 100 300 150 10 1 0.3 200 8 _ 2N 3700 N TO-18 500 1 80 100 6300 150 10 0.5 0.5 100 {2 - 2N 3701 N TO-18 500 1 80 40 120 150 10 0.5 0.5 80 12 - 2N 3702 P TO-92B 360 0.2 25 60 300 50 5 0.25 0.05 100 42 2N 3704 2N 3703 P TO-92B 360 0.2 30 30 150 50 5 0.25 0.05 100 12 2N 3706 2N 3704 N TO-92B 360 0.8 30 100 300 50 2 0.6 0.1 100 12 2N 3702 2N 3705 N TO-92B 360 0.8 30 50 150 50 2 08 0.1 100 12 2N 3702 2N 3706 N | TO-92B8 360 0.8 20 30 600 50 2 1 0.1 100 12 2N 3703 2N 3724 N TO-39 800 0.5 30 60 150 100 4 0.75 1 300 12 - 2N 37244 N | TO-39 1000 1.2 30 60 150 100 1 0.65 0.8 300 12 _ 2N 3725 N TO-39 800 05 50 60 150 100 1 0.95 1 300 10 - 2N 3793 N TO0-92B 250 05 20 20 120 10 10 04 10 100 10 - 2N 3794 N TO-92B 250 0.5 20 100 600 10 10 04 10 100 410 - 2N 3831 N TO-39 1000 1.2 40 35 - 150 1 0.3 0.15 200 12 ~_ 2N 3945 N TO-39 50004 1 50 40 250 150 10 0.5 0.15 60 12 - 2N 4030 P TO-39 800 1 60 40 120 100 5 0.5 0.5 100 20 2N 3108 2N 4031 P TO-39 800 1 80 40 120 100 5 0.5 0.5 100 20 2N 3020 2N 4032 P TO-39 800 1 60 100 300 160 5 0.5 0.5 150 20 2N 3107 2N 4033 P TO-39 800 1 80 100 300 100 5 0.5 0.5 150 20 2N 3109 2N 4036 P TO-39 1000 1 65 40 140 150 10 0.65 0.15 60 30 2N 2102 2N 4037 P TO-39 1000 1 40 50 250 150 10 1.4 0.15 60 30 2N 3053 2N 4046 N | TO-39 800 0.5 30 40 150 100 1 0.65 08 250 12 - 2N 4047 N TO-39 800 0.5 50 40 150 100 1 08 0.8 250 10 - 2N 4140 N | TO-106 300 0.2 30 40 120 150 10 04 0.15 250 8 - 2N 4141 N | TO-106 300 0.2 30 100 300 150 10 0.4 0.15 250 8 - 2N 4142 P TO-106 300 0.2 40 40 120 150 10 04 0.15 200 8 - 2N 4143 P TO-106 300 0.2 40 100 300 150 10 0.4 0.15 200 8 - 2N 4227 N | TO-106 300 0.2 30 75 150 150 10 04 0.15 250 8 - 2N 4228 P TO-106 300 0.2 40 75 150 150 10 04 0.15 200 8 - 2N 4234 P TO-39 1000 3 40 30 150 250 1 0.6 1 3 100 2N 4237 2N 4235 P TO-39 1000 3 60 30 150 250 1 0.6 1 3 100 2N 4238 2N 4236 P TO39 1000 1 80 30 = 6180 250 1 0.6 1 3 100 2N 4239 2N 4237 N TO-39 1000 1 40 30 150 250 1 06 1 2 100 2N 4234 2N 4238 N TO-38 1000 1 60 30 150 250 1 0.6 1 2 100 2N 4235 2N 4239 N TO-39 1000 1 80 30 6150 250 1 0.3 0.5 2 100 2N 4236 2N 4314 P TO-39 1000 1 65 50 250 150 10 14 0.15 60 30 ~_ 2N 4400 N | TO-92A 5006 06 40 60 150 150 1 0.75 0s 200 6.5 2N 4402 * With x67 heat sink TC =25C 310 mW in JEDEC registration 50SEMICONDUCTORS INC O9 D ff 136650 0000300 2 i T- AP-A2/ Medium Power Transistors > - TYPE & MAXIMUM RATINGS Hee VcCEI(SAT) fr Cob COMPLE. No. s CASE Pa tc | VcEo te | Voce | max ic min max 2 (mw) | {A) (v) min max | (mA) | (Vv) | (v) | (A) | (MHz) | (pF) TYPE 2N 4401 N | TO-92A 500@ | 0.6 40 100 300 150 1 0.75 | 0.5 250 6.5 2N 4403 2N 4402 P TO-92A S500@ | 0.6 40 50 150 150 1 0.75 {0.5 7150 8.5 2N 4400 2N 4403 P TO-92A S00 | 0.6 40 100 300 150 1 0.75 | 0.5 200 8.5 2N 4401 2N 4409 N | TO-92A 625 250 50 60 400 10 1 0.2 0.001 60 12 - 2N 4424 N | TO-92B 360 0.5 40 180 540 2 45 03 0.05 - - _ 2N 4425 N | TO-92B*" 560* 0.5 40 180 540 2 45 0.3 0.05 - - - 2N 4944 N [| TO-106 600 0.5 40 40 120 150 1 0.25 | 0.15 60 25 - 2N 4945 N } TO-106 600 0.5 60 40 120 150 1 0.25 | 0.15 60 20 - 2N 4946 N | TO-106 600 0.5 40 100 6300 150 1 0.25 | 0.15 60 25 - 2N 4951 N | TO-92B 360 0.5 30 60 200 150 10 0.3 0.15 250 8 - 2N 4952 N | T0-92B 360 0.5 30 100 300 150 10 0.3 0.15 250 8 - 2N 4953 N | TO-92B 360 0.5 30 200 600 150 10 0.3 0.15 250 8 - 2N 4954 N | TO-92B 360 0.5 30 60 600 150 10 03 | 0.15 250 8 - 2N 4969 N | TO-106 200 0.5 30 40 120 150 10 0.4 0.15 200 8 - 2N 4970 N | TO-106 200 0.5 30 100 350 180 10 0.4 0.15 200 8 - 2N 4971 P TO-106 200 0.5 40 40 120 150 10 0.15 | 0.15 200 8 - 2N 4972 P TO-106 200 0.5 40 100 =6300 1650 10 04 0.15 200 8 - 2N 5022 P TO-39 1000 0.5 50 25 100 500 1 0.2 0.1 170 25 - 2N 5023 P TO-39 1000 0.5 30 40 100 500 1 0.17 | 01 200 25 - 2N 5042 P TO-39 800 1 40 40 150 150 1 1.3 1 100 35 2N 3110 2N 5143 P TO-106 200 0.5 20 30 - 50 1 2 0.3 100 10 - 2N 5220 N | TO-92A 350 0.5 16 30 600 50 10 0.5 0.15 400 10 2N 5221 2N 5221 P FO-92A 350 0.5 15 30 600 50 10 0.5 0.15 100 16 2N 5220 2N 5225 N | TO-92A 350 0.2 25 30 600 50 10 08 0.1 50 20 2N 5226 2N 5226 P T0-92A 350 0.2 25 30 6600 50 10 08 01 50 20 2N 5225 2N 5354 P TO-92B* 360 0.5 25 40 120 50 1 1 03 100 8- - 2N 5355 P TO-92B* 360 0.5 25 100 300 50 1 1 0.3 100 8 - 2N 5356 P TO-92B* 360 0.5 25 250 500 50 1 1 0.3 100 8 - 2N 5365 P TO-92B 360 0.5 40 40 120 50 1 1 0.3 100 8 _ 2N 5366 P TO-92B* 360 0.5 40 100 300 50 1 1 0.3 100 8 - 2N 5367 P TO-92B* 360 0.5 40 250 500 50 1 1 0.3 100 8 - 2N 5368 N | TO-92F 5004 | 0.5 30 60 200 150 10 03 0.15 250 8 2N 5372 2N 5369 N |} TO-92F 5004 | 0.5 30 100 300 150 10 |. 0.3 0.15 250 8 2N 5373 2N 5370 N | TO-92F 5004 | 0.5 30 200 600 150 10 0.3 0.15 250 8 2N 5374 2N 5371 N | TO-92F 5004 | 0.5 30 60 600 150 10 0.3 0.15 250 8 2N 5375 2N 5372 P TO-92F 5004 | 0.5 30 40 120 160 10 0.3 0.15 150 10 2N 5368 2N 373 P TO-92F 5004 | 0.5 30 100 300 150 10 03 0.15 150 10 2N 5369 2N 5374 P TO-92F 5004 | 0.5 30 200 400 150 10 03 0.15 150 10 2N 5370 2N,5375 P TO0-92F 5004 | 0.5 30 40 400 150 10 03 0.16 150 12 2N 5371 2N 5418 N | TO-92B 400 0.5 25 40 120 50 1 1 03 - 6 - 2N 5419 Nj TO-92B 400 0.5 25 100 300 50 1 1 0.3 - 6 - 2N 5420 N | TO0-92B 400 0.5 25 250 500 50 1 1 0.3 - 6 ~ 2N 5447 P TO-92F 5004 | 0.2 25 60 300 50 5 0.25 | 0.05 100 12 2N 5449 2N 5448 P TO-92F 5004 | 0,2 30 30 150 50 5 0.25 | 0.05 100 12 2N 5450 2N 5449 N | T0-92F 5004 | 08 30 100 300 50 2 0.6 0.1 100 12 2N 5447 2N 5450 N | TO-92F 5004 | 08 30 50 150 50 2 08 0.1 100 12 2N 5448 2N 5451 N | TO0-92F 360 0.8 20 30 600 50 2 1 0.1 100 12 - 2N 5810 N | TO-92F 625 0.75 25 60 200 2 2 0.75 |0.5 100 18 2N 5811 2N 5811 P TO-92F 625* 0.75 25 60 200 2 2 0.75 |/0.5 100 15 2N 5810 2N 5812 N | TO-92F 625* 0.75 25 160 500 2 2 0.75 {0.5 135 15 2N 5813 2N 5813 P | TO-92F 625* | 0.75 25 150 500 2 2 0.75 (0.5 135 15 2N 5812 2N 5814 N | TO-92F 625* 0.75 40 60 120 2 2 0.75 |0.5 100 15 2N 5815 2N 5815 P | TO-92F 625" | 0.75 40 60 120 2 2 0.75 |0.5 100 15 | 2N 5814 2N 5816 N {| TO-92F 625 0.75 40 100 6200 2 2 0.75 [0.5 120 15 2N 5817 2N 5817 P | TO-92F* 800" | 0.75 40 100 200 2 2 0.75 |0.5 120 15 | 2N 5816 * With x-67 heat sink 4360 mW in JEDEC registration @310 mW in JEDEC registration 51SEMICONDUCTORS INC OTE D BW siscesa 0000301 4 i Medium Power Transistors T= &AG__2/ TYPE E MAXIMUM RATINGS HreE VcE(SAT) ft Cob COMPLE- NO. $ CASE Pg tc | VcEo tc | Voce | max | Ic min | max | MENTARY 9 (mw) | (A) (v) min max |(mA) | (Vv) | (vd) | (A) | (MHz) | (pF) TYPE 2N 5818 N | TO-92F* goo* 0.75 40 150 300 2 2 0.75 | 0.5 135 16 2N 5819 2N 5819 P TO-92F* 800* 0.75 40 150 300 2 2 0.75 0.5 135 15 2N 5818 2N 5820 N | TO-92F* s0o* 1 60 60 120 2 2 0.75 0.5 140+ 15 2N 5821 2N 5821 P TO-92F* go0o* 1 60 60 120 2 2 0.75 0.5 140+ 15 2N 5820 2N 5822 N | TO-92F* g0o* 1 60 100 200 2 2 0.75 0.5 140+ 15 2N 5823 2N 5823 P TO-92F* 800 1 60 100 200 2 2 0.75 0.5 140+ 15 2N 5822 2SA 497 P TO-39 600 0.8 80 40 240# | 200 2 08 0.2 70+ 33+ | 28C 497 2S8A 498 P TO-39 600 0.8 50 40 240# | 200 2 08 0.2 70+ 33+ | 2SC 498 2SA 503 P | T0-39 800 0.6 50 30 300# | 150 2 05 0.15 50 30 2SC 503 28A 504 P | TO-39 800 0.6 30 30 300# | 150 2 0.5 0.15 50 30 28C 504 2SA 532 P TO-39 500 0.2 50 40 320# 50 6 1.5 0.1 100+ - - 2SA 539 P TO-92B 250 0.2 45 50 232# 50 1 0.5 0.15 100 5.5+ | 28C 815 2S4 544 P TO-39 750 0.2 45 40 200# 10 10 0.4 0.03 80 7 - 2SA 545 P TO-92B* 400 0.2 60 50 232# 50 1 0.5 0.15 4100 7 28C 853 2SA 606 P TO-39 7004 0.7 80 40 2007 | 200 5 2 0.5 50 50 ~ 2SA 642 P TO-92B 250 03 16 65 400# 50 1 0.6 0.3 180+ 30 2SD 227 2SA 643 P | TO-92B 500 05 20 60 285# | 100 1 0.6 0.5 410+ 30 28D 261 2SA 659 P TO-92B 300 0.2 50 40 320# 50 6 1.5 0.1 90+ - 28C 1175 2SA 708 P | TO-39 800 07 60 80 240# 50 2 0.7 0.5 100+ 25+ - 2SA 719 P TO-92B 400 0.5 25 60 340# | 150 10 0.6 0.5 160+ 15 2SC 1317 2SA 720 P TO-92B 400 0.5 50 60 340# | 150 10 0.6 0.5 160+ 15 2S8C 1318 2SA 723 P TO-92B 250 0.5 20 60 285# | 100 1 06 0.5 410+ - 2SD 327 2S8A 730 P } TO-92B* 600 05 25 60 340# | 150 10 0.6 0.5 160+ 15 2S8C 1346 2SA 731 P TO-92B* 600 0.5 50 60 340# | 150 10 0.6 0.5 160+ 15 2SC 1347 2SA 733 P TO-92B 250 0.1 40 60 600# 1 6 0.5 0.03 50 12 28C 945 28A 817 P TO-92B 600 0.3 80 70 240# 50 2 0.4 0.2 100+ 17+ | 2S8C 1627 2SA 890 P | TO-924 625 05 25 60 340# { 150 10 0.6 0.5 200+ 15 2SC 1851 2SA 891 P TO-92A 625 0.5 50 60 340%; 150 10 06 0.5 200+ 15 2SC 1852 2SA 950 P | TO-92B8 600 08 25 100 320# | 100 1 0.7 0.5 120+ 19+ | 2SC 2120 2SB S60 P | TO-92B 750 0.7 80 60 320# 50 5 0.8 0.5 100+ 15+ | 2SD 438 2SB 598 P | TO-92B 500 1 20 60 560# 50 2 0.5 05 180+ 25+ | 28D 545 2SB 621 P TO-92B 600 1.5 25 60 - 500 10 - - 200+ 20+ - 28C 32 N | TO-39 750 0.2 25 40 110 10 10 0.5 0.03 120 7 - 2SC 497 WN | TO-39 - 600 0.8 80 40 240# | 200 2 08 0.2 50+ 15+ | 2SA 497 2SC 498 N | TO-39 600 08 50 40 240# | 200 2 0.8 0.2 50+ 15+ | 2SA 498 2SC 503 N | TO-39 800 0.6 50 30 300# | 150 2 0.5 0.15 50 30 2SA 503 28C 504 N | TO-39 800 06 30 30 300# | 150 2 0.5 0.15 50 30 2SA 504 2SC 815 N | TO-928 250 0.2 45 50 232# 50 1 0.5 0.15 100 8 2SA 539 2SC 853 N | TO-92B* 400 0.2 60 60 232# 50 1 0.5 0.15 150+ - 2SA 545 2SC 875 N j TO-39 500 0.2 75 40 320# 50 6 15 0.1 170+ 5+ - 28C 876 N } TO-39 500 0.2 50 40 320# 50 6 15 0.1 170+ 5+ - 2SC 881 N | T0-928* 400 0.2 45 50 232# 50 1 0.5 0.15 150+ - - 28C 933 N | TO92B 300 0.3 30 40 560# 20 5 - - - - - 2SC 934 N | TO-92B8 300 03 15 40 Ss60# 20 5 - - - - _ 2SC 938 N {| TO-928 250 0.2 60 50 232# 50 1 0.5 0.15 150+ _ - 2SC 959 N | TO-39 700 0.7 80 40 2004 | 200 5 2 0.5 50 50 - 28C 1008 N | TO39 800 07 60 80 240# 50 2 07 0.5 75+ 17+ ~ 2SC 1175 N | TO-92B 300 0.2 50 40 320# 50 6 15 O41 170+ - 2SA 659 28C 1317 N | TO-92B 400 0.8 25 60 340# | 150 10 0.6 0.5 200+ 15 2S5A 719 28C 1318 N ; TO-92B 400 0.5 50 60 3404 | 150 10 06 0.5 200+ 15 2SA 720 28C 1346 N | TO-92B 600 0.5 25 60 3404 | 150 10 06 0s 200+ 15 2SA 730 2S8C 1347 N | TO-92B 600 0.5 50 60 340# | 150 10 0.6 0.5 200+ 15 2SA 731 4Tc= 25C * With x-67 heatsink #HEeE groupings available + Typical valueSEMICONDUCTORS INC OFE D B siaceso O00030e & i Te ASG-A Medium Power Transistors > - TYPE & MAXIMUM RATINGS HFE VcE(SAT) ft Cob COMPLE- NO. a CASE Pa lc | VcEO le | Vee | max Ic min max | MENTARY (mW) | (A) (v) min max |(mA) | (Vv) | (Vv) |) (A) | (MHz) | (pF) TYPE 2SC 1627 N TO-92B 600 0.3 80 70 240# 50 2 0.4 0.2 100+ 40+ 2SA 817 28C 1788 N | TO-92B 600 0.5 20 65 220# | 500 2 04 0.5 150+ 15 - 2SC 1851 N | TO-92A 625 0.5 ,25 60 340# {| 150 10 06 0.5 200+ 15 2SA 890 2SC 1852 N TO-92A 625 0.5 50 60 340# | 150 10 0.6 0.5 200+ 15 2SA 891 2S8C 2120 N | TO-928 600 0.8 25 100 320# | 100 1 0.5 0.5 120+ 13+ | 2SA950 2SD 227 N | TO-92B 250 0.3 15 65 400# 50 1 0.5 0.3 120+ - 2SA 642 2SD 261 N TO-92B* 500 0.5 20 60 285# | 100 1 0.6 0.5 120+ - 2SA 643 28D 327 N J7O-92B 250 0.5 20 60 285# | 100 1 0.6 0.5 120+ - 2SA 723 28D 545 N | TO-92B 500 1 20 60 560# 50 2 0.3 0.5 180+ 15+ 2SB 598 2SD 592 N TO-92B 600 1.5 25 60 ~ 500 10 - - 200+ 10+ - * With x-67 heat sink # HEE groupings available + Typical value 534349 af T~G/ -o2 O SEMICONDUCTORS INC OTE D i 8136650 0000323 Packaging Information SCR TRIAC 1. CATHODE 1. CATHODE 1. MT 1 2. GATE 2. GATE 2. GATE 3. ANODE 3. ANODE 3. MT 2 ~ go. ba 4 : we SEATIN 210 PACKAGING bare /ti ae ii sear .500 MIN INFORMATION UOEt-stcans Tt _O00 016 * 136 138 ob be sewn ee TO-18 (PLASTIC) TO-92 SCR TRIAC 1. CATHODE 1. CATHODE 1. MT 1 2. GATE 2. GATE 2. GATE 3. ANODE 3. ANODE 3. MT 2 e370 300 aaa ass CATHODE = | see di a 240) oe PLANE B78 Nw 210 500 MIN. | im O19 M40 ie SEATING PLANE ej 70 +0 Go gS 5 TT]. tos 930 | SOO MIN. , , 27 Sas ax om. cia t! WAX x00 MAX."] S5e 3 = 422 ANOOE f % ~ 22 UNF - 2A TO-48D 74 c-04 ee weeps eg eee