0.195 (4.95)
0.040 (1.02)
NOM
0.305 (7.75)
0.240 (6.10)
0.215 (5.45)
0.020 (0.51)
SQ. (2X)
REFERENCE
SURFACE
COLLECTOR
0.800 (20.3)
MIN
0.100 (2.54) NOM
0.500 (1.25)
EMITTER
PACKAGE DIMENSIONS
FEATURES
• NPN Silicon Phototransistor
• Package Type: T-1 3/4
• Notched Emitter: QED12X/QED22X/QED23X
• Narrow Reception Angle: 24°C
• Daylight Filter
• Package Material and Color: Black Epoxy
• High Sensitivity
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
PLASTIC SILICON INFRARED
PHOTOTRANSISTOR
EMITTER
COLLECTOR
SCHEMATIC
DESCRIPTION
The QSD122/123/124 is a phototransistor encapsulated in an infrared transparent, black T-1 3/4 package.
QSD122 QSD123 QSD124
2001 Fairchild Semiconductor Corporation
DS300361 7/20/01 1 OF 4 www.fairchildsemi.com
Parameter Symbol Rating Unit
Operating Temperature TOPR -40 to +100 °C
Storage Temperature TSTG -40 to +100 °C
Soldering Temperature (Iron)(2,3,4) TSOL-I 240 for 5 sec °C
Soldering Temperature (Flow)(2,3) TSOL-F 260 for 10 sec °C
Collector-Emitter Voltage VCE 30 V
Emitter-Collector Voltage VEC 5V
Power Dissipation(1) PD100 mW
ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise specified)
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
Peak Sensitivity Wavelength !PS — 880 — nm
Reception Angle "— ±12 — Deg.
Collector Emitter Dark Current VCE = 10 V, Ee = 0 ICEO — — 100 nA
Collector Emitter Breakdown IC= 1 mA BVCEO 30 — — V
Emitter Collector Breakdown IE= 100 µA BVECO 5——V
On-State Collector Current(5)
QSD122 1.00 — 6.00
QSD123 Ee= 0.5 mW/cm2, VCE = 5 V IC (ON) 4.00 — 16.00 mA
QSD124 6.00 — —
Saturation Voltage(5) Ee= 0.5 mW/cm2, IC= 0.5 mA VCE (SAT) — — 0.4 V
Rise Time VCC = 5 V, RL= 100 V IC= 0.2 mA tr—7—
µs
Fall Time tf—7—
ELECTRICAL / OPTICAL CHARACTERISTICS (TA=25°C)
NOTE:
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16” (1.6mm) minimum from housing.
5. != 880 nm, AlGaAs.
www.fairchildsemi.com 2 OF 4 7/20/01 DS300361
PLASTIC SILICON INFRARED
PHOTOTRANSISTOR
QSD122 QSD123 QSD124
DS300361 7/20/01 3 OF 4 www.fairchildsemi.com
Figure 1. Light Current vs. Radiant Intensity
Figure 3. Dark Current vs. Collector - Emitter Voltage
Figure 5. Dark Current vs. Ambient Temperature
Figure 2. Angular Response Curve
0.0 0.2 0.4 0.6 0.8 1.00.2
0.4
0.6
0.8
1.0 0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
Figure 4. Light Current vs. Collector - Emitter Voltage
VCE - Collector-Emitter Voltage (V)
0.1 1 10
I
L
- Normalized Light Current
10-3
10-2
10-1
100
101
Ee - Radiant Intensity (mW/cm 2)
0.0 0.2 0.4 0.6 0.8 1.0
I
C(ON)
- Light Current (mA)
0.1
1
10
100
Normalized to:
VCE = 5V
Ie = 0.5mW/cm
TA= 25oC
2
Ie=0.1mW/cm2
Ie=0.2mW/cm2
Ie=0.5mW/cm2
Ie=1mW/cm2
TA - Ambient Temperature (oC)
-40 -20 0 20 40 60 80 100
I
CEO
- Normalized Dark Current
10-1
100
101
102
103
104
VCE=25V
VCE=10V
Normalized to:
VCE = 25V
TA= 25oC
VCE
- Collector-Emitter Voltage (V)
0 5 10 15 20 25 30
ICEO - Dark Current (nA)
10-3
10-2
10-1
100
101
PLASTIC SILICON INFRARED
PHOTOTRANSISTOR
QSD122 QSD123 QSD124
www.fairchildsemi.com 4 OF 4 7/20/01 DS300361
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PLASTIC SILICON INFRARED
PHOTOTRANSISTOR
QSD122 QSD123 QSD124
