MJH11022 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

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. . . designed for use as general purpose amplifiers, low frequency switching and

motor control applications.

•High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types)

•Collector–Emitter Sustaining Voltage

VCEO(sus) = 150 Vdc (Min) — MJH11018, 17

VCEO(sus) = 200 Vdc (Min) — MJH11020, 19

VCEO(sus) = 250 Vdc (Min) — MJH11022, 21

•Low Collector–Emitter Saturation Voltage

VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A

VCE(sat) = 1.8 V (Typ) @ IC = 10 A

•Monolithic Construction

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

MJH

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎ

11018

11017

ÎÎÎÎ

11020

11019

ÎÎÎ

11022

11021

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎ

150

ÎÎÎÎ

200

ÎÎÎ

250

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

VCB

ÎÎÎ

150

ÎÎÎÎ

200

ÎÎÎ

250

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

— Peak (1)

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

0.5

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TC = 25

Derate Above 25

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

150

1.2

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance. Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

0.83

ÎÎÎ

C/W

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle

10%.

PD, POWER DISSIPATION (WATTS)

160

0TC, CASE TEMPERATURE (

40 60 100 120 16080 14020

Figure 1. Power Derating

100

140

120

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by MJH11017/D



 

 Motorola, Inc. 1995













15 AMPERE

DARLINGTON

COMPLEMENTARY SILICON

POWER TRANSISTORS

150, 200, 250 VOLTS

150 WATTS

*Motorola Preferred Device







CASE 340D–01



     

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 0.1 Adc, IB = 0) MJH11017, MJH11018

MJH11019, MJH11020

MJH11021, MJH11022

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

150

200

250

ÎÎÎ

—

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 75 Vdc, IB = 0) MJH11017, MJH11018

(VCE = 100 Vdc, IB = 0) MJH11019, MJH11020

(VCE = 125 Vdc, IB = 0) MJH11021, MJH11022

ÎÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎ

1.0

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = Rated VCB, VBE(off) = 1.5 Vdc)

(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TJ = 150

ÎÎÎÎÎ

ICEV

ÎÎÎÎ

—

ÎÎÎ

0.5

5.0

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 5.0 Vdc IC = 0)

ÎÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎ

2.0

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc)

DC Current Gain (IC = 15 Adc, VCE = 5.0 Vdc)

ÎÎÎÎÎ

hFE

ÎÎÎÎ

400

100

ÎÎÎ

15,000

—

ÎÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc)

DC Current Gain (IC = 15 Adc, VCE = 5.0 Vdc)

ÎÎÎÎÎ

hFE

ÎÎÎÎ

400

100

ÎÎÎ

15,000

—

ÎÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (IC = 15 Adc, VCE = 5.0 Vdc)

ÎÎÎÎÎ

ÎÎÎÎ

100

ÎÎÎ

—

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage (IC = 10 Adc, IB = 100 mA)

Collector–Emitter Saturation Voltage (IC = 15 Adc, IB = 150 mA)

ÎÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎ

2.5

4.0

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage (IC = 10 A, VCE = 5.0 Vdc)

ÎÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎ

2.8

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage (IC = 15 Adc, IB = 150 mA)

ÎÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎ

3.8

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain Bandwidth Product

(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

ÎÎÎÎÎ

ÎÎÎÎ

3.0

ÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance MJH11018, MJH11020, MJH11022

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJH11017, MJH11019, MJH11021

ÎÎÎÎÎ

Cob

ÎÎÎÎ

—

ÎÎÎ

400

600

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)

ÎÎÎÎÎ

hfe

ÎÎÎÎ

ÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎ

ÎÎÎÎÎÎ

Typical

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎ

NPN

ÎÎÎ

PNP

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Delay Time

ÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 100 V, IC = 10 A, IB = 100 mA

VBE(off) = 5.0 V) (See Figure 2)

ÎÎÎÎÎ

ÎÎÎÎ

150

ÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎ

Rise Time

ÎÎÎÎÎÎÎÎÎÎÎ

CC = 100 V, IC = 10 A, IB = 100 mA

VBE(off) = 5.0 V) (See Figure 2)

ÎÎÎÎÎ

ÎÎÎÎ

1.2

ÎÎÎ

0.5

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 100 V, IC = 10 A, IB = 100 mA

VBE(off) = 5.0 V) (See Figure 2)

ÎÎÎÎÎ

ÎÎÎÎ

4.4

ÎÎÎ

2.7

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎ

ÎÎÎÎ

2.5

ÎÎÎ

2.5

ÎÎÎÎ

µs

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle

2.0%.

Figure 2. Switching Times Test Circuit

RB & RC varied to obtain desired current levels

D1, must be fast recovery types, e.g.:

1N5825 used above IB ≈ 100 mA

MSD6100 used below IB ≈ 100 mA

tr, tf ≤ 10 ns

Duty Cycle = 1.0%

For td and tr, D1 is disconnected

and V2 = 0

For NPN test circuit, reverse diode and voltage polarities.

APPROX

+12 V0

APPROX

–8.0 V

VCC

100 V

TUT SCOPE

+4.0 V

     

Motorola Bipolar Power Transistor Device Data

Figure 3. Thermal Response

t, TIME (ms)

1.0

0.01 0.02

0.7

0.2

0.1

0.05

0.02

r(t), EFFECTIVE TRANSIENT THERMAL

0.05 1.0 2.0 5.0 10 20 50 100 200 500

JC(t) = r(t) R

JC = 0.83

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) R

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

SINGLE PULSE

0.1 0.50.2

RESISTANCE (NORMALIZED)

1000

0.5

0.3

0.07

0.03

0.01 0.03 3.0 30 3000.3

0.2

0.1

0.05

0.02

0.01

WIRE BOND LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

0.5 ms

Figure 4. Maximum Rated Forward Bias

Safe Operating Area (FBSOA)

1.0 ms

5.0 ms

0.1 ms

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

2.0

IC, COLLECTOR CURRENT (AMPS)

3.0 10

0.5

0.2

5.0

1.0

20 100

TC = 25

C SINGLE PULSE

5.0 50 25015030

MJH11017, MJH11018

MJH11019, MJH11020

MJH11021, MJH11022

FORWARD BIAS

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 4 is based on TJ(pk) = 150

C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

150

C. TJ(pk) may be calculated from the data in

Figure 3. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

140

IC, COLLECTOR CURRENT (AMPS)

60 180100

260220

Figure 5. Maximum Rated Reverse Bias

Safe Operating Area (RBSOA)

L = 200

IC/IB1

≥

TC = 100

VBE(off) = 0–5.0 V

RBE = 47

Ω

DUTY CYCLE = 10%

MJH11017, MJH11018

MJH11019, MJH11020

MJH11021, MJH11022

REVERSE BIAS

For inductive loads, high voltage and high current must be

sustained simultaneously during turn–off, in most cases, with

the base to emitter junction reverse biased. Under these

conditions the collector voltage must be held to a safe level

at or below a specific value of collector current. This can be

accomplished by several means such as active clamping,

RC snubbing, load line shaping, etc. The safe level for these

devices is specified as Reverse Bias Safe Operating Area

and represents the voltage–current conditions during re-

verse biased turn–off. This rating is verified under clamped

conditions so that the device is never subjected to an ava-

lanche mode. Figure 5 gives RBSOA characteristics.

     

4 Motorola Bipolar Power Transistor Device Data

VOLTAGE (VOLTS) VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

TC = 150

IB, BASE CURRENT (mA)

1000

3000

2000

5000

7000

10,000

PNP NPN

1.0

1.0 2.0 5.0

3.0

2.5

4.0

3.5

3.0 10 30

4.5

2.0

50 100

IC = 15 A

Figure 6. DC Current Gain

0.2 153.01.00.5 5.0 100.3

hFE, DC CURRENT GAIN

TC = 150

–55

VCE = 5.0 V

IC, COLLECTOR CURRENT (AMPS)

Figure 7. Collector Saturation Region

Figure 8. “On” Voltages

1.5

300 500 1000200

TJ = 25

IC = 10 A

IC = 5.0 A

IC, COLLECTOR CURRENT (AMPS)

3.0

2.5

VOLTAGE (VOLTS)

4.0

3.5

2.0

0.5

0.2 0.5 5.00.3 1.00.7 3.0

TJ = 25

VBE(sat) @ IC/IB = 100

VBE @ VCE = 5.0 V

VCE(sat) @ IC/IB = 100

7.02.0 10 20

100

hFE, DC CURRENT GAIN

IC, COLLECTOR CURRENT (AMPS)

IB, BASE CURRENT (mA)

1.0 2.0 5.03.0 10 30 50 100

IC = 15 A

20 300 500200

TJ = 25

IC = 10 A

IC = 5.0 A

IC, COLLECTOR CURRENT (AMPS)

1.5

1.0

1000

PNP NPN

500

200

0.7

1000

2000

5000

10,000

0.2 153.01.00.5 5.0 100.3 7.0

–55

VCE = 5.0 V

100

500

200

0.7

3.0

2.5

4.0

3.5

2.0

0.5

0.2 0.5 5.01.00.7

TJ = 25

VBE(sat) @ IC/IB = 100

VBE @ VCE = 5.0 V

VCE(sat) @ IC/IB = 100

2.0 10 20

1.5

1.0

3.0

2.5

4.0

3.5

4.5

2.0

1.5

     

Motorola Bipolar Power Transistor Device Data

BASE

EMITTER

COLLECTOR

BASE

EMITTER

COLLECTOR

PNP NPN

Figure 9. Darlington Schematic

MJH11018

MJH11020

MJH11022

MJH11017

MJH11019

MJH11021

     

6 Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 340D–01

SOT 93, TO–218 TYPE

ISSUE A

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

BQEC

DIM MIN MAX MIN MAX

INCHESMILLIMETERS

A19.00 19.60 0.749 0.771

B14.00 14.50 0.551 0.570

C4.20 4.70 0.165 0.185

D1.00 1.30 0.040 0.051

E1.45 1.65 0.058 0.064

G5.21 5.72 0.206 0.225

H2.60 3.00 0.103 0.118

J0.40 0.60 0.016 0.023

K28.50 32.00 1.123 1.259

L14.70 15.30 0.579 0.602

Q4.00 4.25 0.158 0.167

S17.50 18.10 0.689 0.712

U3.40 3.80 0.134 0.149

V1.50 2.00 0.060 0.078

1 2 3

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MJH11017/D

*MJH11017/D*

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