~~ Low Noise - > - >- Soe - 41775470 C O D I SEMICONDUCTOR INC 80D 00573 40 pe Birzsuvo oooos?3 4 CODI Semiconductor, Inc. oees ed 5. : oa on +8 LOW NOISE LOW VOLTAGE / AVALANCHE DIODES 600 mw - 2.8 to 10.0 volts CODI!'s proprietary BiTaxial process creates a major break- through in the design of low voltage avalanche zener diodes. The small number of crystal dislocations and more uniform radial resistivity gradient in the BiTaxial material yields much sharper, low noise, low voltage breakdown voltages than any other manufacturing process available today. For designers requiring a combination of Sharp Breakdown e Controlled Voltage Regulation Low Dynamic Impedance e Low Leakage e High Temperature low voltage avalanche zener diodes are now available. Zener voltages compatible with integrated . circuit power supplies, (C OP Amps, etc. give the circuit and systems designer performance characteristics only talked of prior to these new CODI low voltage avalanche diodes. MECHANICAL CHARACTERISTICS: DO-7 Package MAXIMUM RATINGS Symbol Parameter Maximum Unit P Continuous Power Dissipation. See Note 1 600 mw Ta(OPR)| Operating (Free Air) Temperature RangeSee Note 2 65 to + 175 Cc Tstg Storage Temperature Range 65 to + 200 c Lead Temperature 1/16 inch from case for 10 seconds 260 c Note 1: Derate tinearly at the rate of 4 mw per C. above Ta of 25C. Note 2: The device is lead conduntion cooled. The lead temperature 3/8 inch from the case must be no more than 8C greater than the free air temperature for these ratings to apply. Fi TOLL-FREE: 1-800-232-CODI TELEX: 844-796 aay CR Kaa F Dp T-MR-/. eee LOW NOISE AVALANCHE DIODES LNA328 thru LNA3100 GLA28 thru GLA100 APPLICATIONS High Stability Regulators Wave Shaping Comparator References Low Ripple Series Regulators OP Amp Regulators e Feedback Clamps o 6; otis (201) 298-0400. FAX NUMBER: 201-298-0477 90D 00574 D T-lic/t 1775470 go00574 4 i meee LOW NOISE AVALANCHE DIODES LNA328 thru LNA3100 GLA28 thru GLA100 INC 1775470 C O D I SEMICONDUCTOR , 40 DE ey tobhbom s LNA TYPES - DO7 PACKAGE ELECTRICAL CHARACTERISTICS: REVERSE REVERSE ZENER TEST DYNAMIC NOISE REGULATION cop! VOLTAGE | CURRENT | IMPEDANCE | DENSITY from lat CURRENT CURRENT TYPE (Note 2) (Note 3) @ 250 JA to la @25C @ 150C NUMBER (Note 1) Nom. Max. Max. Max, - Max. Max. V2@ly | lot Zz @ lot Av lat i, Vr lr Vy Vde mA Q pvin/az | Vde mA BA Vde pA Vde LNA 328 2.8 20 50 1 0.75 2.0 5.0 1.0 80.0 1.0 LNA 331 31 20 30 1 0.75 2.0 25 1.0 60.0 1.0 LNA 335 3.5 20 20 1 0.75 2.0 2.0 1.0 40.0 1.0 LNA 339 3.9 20 15 1 0.75 2.0 2.0 1.0 30.0 1.0 LNA 343 43 20 12 1 0.75 2.0 2.0 1.5 25.0 1.5 LNA 347 4.7 10 10 1 0.5 4.0 2.0 2.0 10.0 2.0 LNA 351 5.1 5 10 1 0.3 0.25 2.0 3.0 5.0 2.0 LNA 356 5.6 1 40 1 0.1 0.05 2.0 45 10 > 3.0 LNA 362 6.2 1 40 1 0.1 0.01 0.5 56 1.0 4.0 LNA 368 6.8 1 50 1 0.1 0.01 0.05 6.2 1.0 5.0 LNA 375 75 1 50 1 0.1 0.01 0.01 6.8 1.0 6.0 LNA 382 8.2 1 75 1 0.1 0.01 0.01 7.5 1.0 6.5 LNA 391 9.1 1 75 1 0.1 0.01 0.01 8.2 1.0 8.0 LNA 3100 10.0 1 75 1 0.1 0.01 0.01 9.1 1.0 9.0 ELECTRICAL CHARACTERISTICS: ZENER TEST | DYNAMIC | NOISE REGULATION GEVERSE AVERAGE copi (Note 2) (Note 3) @ 250 HA t0 lot @ 25C TYPE NUMBER Nom. Max. Max. Max, Max. Max. (Note 1) Vz @ 16 tet Zz @ lat Av la ty Vv, Vde mA Q Bvi/az | vae mA HA Vde % / C Temp. GLA 28 2.8 20 50 4 1.0 2.0 10.0 1.0 ~.065 GLA 31 3.1 20 30 4 1.0 2.0 5.0 1.0 .063 + -ASGLA 35 3.5 20 20 4 1.0 2.0 4.0 1.0 .058 | GLA39 3.9 20- 16 4 1.0 2.0 4.0 1.0 .050 -Lucpe GLA 43 43 20 12 4 1.0 2.0 4.0 15 .025 GLA 47 47 10 10 4 0.75 1.0 4.0 2.0 +.010 GLA 51 5.1 5 10 4 0.45 0.25 0.10 2.0 +.025 GLA 56 5.6 1 40 4 0.15 0.05 0.05 3.0 +.033 GLA 62 6.2 1 40 4 0.15 0.01 0.05 4.0 +,045 GLA 68 6.8 1 50 4 0.15 0.01 0.05 5.0 +.050 GLA 75 75 1 50 4 0.15 0.01 0.01 6.0 +,055 GLA 82 8.2 1 75 4 0.15 0.01 0.01 6.5 +.062 GLA 91 9.1 1 75 4 0.15 0.01 0.01 8.0 +.066 GLA 100 . 10.0 1 75 4 0.16 0.01 0.01 9.0 +.070 Notes: (1) CASE TYPE These devices are also available in a micro package. (2) TOLERANCE Tolerance is specified by the type number suffix letter. No suffix tetter + 10% (3) OYNAMIC IMPEDANCE Dynamic Impedance is measured at [24 with 10% ac superimposed (60 Hz RMS). Suffix letter A +5% Suffix letter 8B + 2% The generic 1N6082 series, A thru D tolerances, is also available from COD! in both Commerciat and High-Rel versions. Please consult factory. . 7 \ 1775470 C O D I SEMICONDUCTOR INC 90D 00575 DT--H qa pe ff 1ezsu7o Oo00s75 a DD ence Typical Breakdown Characteristics 20.0 10.0 5.0 1.0 Zener Current mA Oo an pmeneed 0.1 0.05 f ] 0 2 4 6 8 10 Breakdown Voltage Vdc Pe 0.01 LOW NOISE AVALANCHE DIODES LNA328 thru LNA3100 | GLA28 thru GLA100 SR ote, Tas Eis OS TYPICAL CHARACTERISTICS Typical Dynamic Impedances 100 80 60 40 5mA Dynamic Impedance @ Test Current Chms 10mA 20mA 4 5 9 10 6 7 8 Breakdown Voltage @ Test Current Vde Typical Temperature Coefficient (25C to 100C) | a L He test Current = 20mA [H-1ma yp 0.07 e = | * 0.05 5 & 0.03 z - (0.01 = 0 2 -001 o 8 2 -0.03 5 s 2 0.05 VU. eS -0.07 0 CODI welcomes your inquiries concerning other avalanche zener diodes and T.C. voltage reference diodes and is ready to assist you in your specific applications problems. 2 4 6 8 10 Zener Voltage @ Test Current Volts 4775470 GC OD I SEMICONDUCTOR INC _ - 90D 00576 D Jalf-u 50 DE 1775470 go00574 Oo TYPICAL CIRCUIT APPLICATIONS LOW NOISE AVALANCHE DIODES LNA328 thru LNA3100 GLA28 thru GLA100 : B+ : : { +o o+ Op Amp = \ Unregulated Regulated DC input DC output OP AMP REGULATOR BASIC PARALLEL REGULATOR esil +o-VMAA + Regulated DC output out Differentia Comparato Unregulated DC input BASIC SERIES REGULATOR DIFFERENTIAL COMPARATOR CLAMP TYPICAL AVALANCHE DIODE CHARACTERISTICS Typical Vz vs Izz characteristics of a BiTaxial Avalanche Diode compared with a theoretically perfect device are reprinted below. zt "Vz of MGLA 56 Vz of IDEAL 5.6V ZENER Av .O1 ma 5.125 V 5.600 V 0.578 V 03 ma 5.440 V 5.600 V 0.160 V .O5S ma 5.525 V 5.600 V 0.075 V .10 ma 5.544 V 5.600 V 0.056 V .30 ma 5.553 V 5.600 V 0.047 V 50 ma 5.5957 V 5.600 V 0.043 V 1.00 ma 5.564 V .600 V 0.036 V 3.00 ma 5.585 V 5.600 V -0.015 V- 5.00 ma 5.600 V 5.600 V Ov 10.00 ma .632 V 5.600 V +0.032 V 20.00 ma 5.664 V 5.600 V +0.064 V 30.00 ma 5.696 V 5.600 V +0.096 V CASE DO7 OUTLINE . MICRO-SILVER LEAD MICRO-RIBBON LEAD POWER . DISSIPATION 400 mW 750 mW 200 mW M Prefix MR Prefix . P.D. ; : * i . PACKAGE poe et | com | p sam a sn | 1 | pimensions | tae mg One on tage Ohne