AP9575GS/P-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge D Simple Drive Requirement Fast Switching Characteristic RoHS Compliant & Halogen-Free BVDSS -60V RDS(ON) 70m ID G -16A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. GD S TO-263(S) The TO-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9575GP) are available for low-profile applications. G Absolute Maximum Ratings Parameter Symbol D TO-220(P) S Rating Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage +25 V ID@TC=25 Continuous Drain Current, VGS @ 10V -16 A ID@TC=100 Continuous Drain Current, VGS @ 10V -10 A 1 IDM Pulsed Drain Current -60 A PD@TC=25 Total Power Dissipation 31.3 W Linear Derating Factor 0.25 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-c Parameter Maximum Thermal Resistance, Junction-case 3 Value Units 4.0 /W Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 40 /W Rthj-a Maximum Thermal Resistance, Junction-ambient 62 /W Data and specifications subject to change without notice 1 201007022 AP9575GS/P-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -60 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-10A - - 70 m VGS=-4.5V, ID=-8A - - 90 m VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-9A - 14 - S IDSS Drain-Source Leakage Current VDS=-60V, VGS=0V - - -10 uA Drain-Source Leakage Current (T j=125 C) VDS=-48V, VGS=0V - - -250 uA Gate-Source Leakage VGS= +25V, VDS=0V - - +100 nA ID=-9A - 14 27 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-48V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 8 - nC VDS=-30V - 8 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-9A - 17 - ns td(off) Turn-off Delay Time RG=3.3,VGS=-10V - 36 - ns tf Fall Time RD=3.3 - 41 - ns Ciss Input Capacitance VGS=0V - 1100 2800 pF Coss Output Capacitance VDS=-25V - 115 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 90 - pF Min. Typ. IS=-10A, VGS=0V - - -1.3 V IS=-9A, VGS=0V, - 38 - ns dI/dt=-100A/s - 61 - nC Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Max. Units Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9575GS/P-HF 50 40 -10V -7.0V -5.0V -ID , Drain Current (A) 40 -10V -7.0V -5.0V o TC=150 C -ID , Drain Current (A) o T C =25 C -4.5V 30 20 30 -4.5V 20 10 10 V G =-3.0V V G =-3.0V 0 0 0 2 4 6 8 0 10 4 6 8 10 12 14 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 90 2.0 I D = -8 A I D = -10 A V G = - 10V 1.8 T C =25 o C Normalized RDS(ON) 80 RDS(ON) (m) 2 -V DS , Drain-to-Source Voltage (V) 70 60 1.6 1.4 1.2 1.0 0.8 0.6 50 0.4 2 4 6 8 10 -50 0 50 100 150 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 10.0 1.6 1.4 Normalized -VGS(th) (V) 8.0 -IS(A) 6.0 T j =150 o C 4.0 T j =25 o C 1.2 1.0 0.8 2.0 0.6 0.0 0.4 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9575GS/P-HF 12 f=1.0MHz 10000 10 8 1000 C iss 100 C oss C rss C (pF) -VGS , Gate to Source Voltage (V) I D = -9A V DS = -48V 6 4 2 0 10 0 10 20 30 1 40 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 Normalized Thermal Response (R thjc) 1 100us -ID (A) 10 1ms 10ms 1 100ms DC o T C =25 C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 0.1 1 10 100 1000 0.00001 0.0001 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area VDS 90% 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4