A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/2
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 5.0 mA 50 V
BVCES IC = 5.0 mA 50 V
BVEBO IE = 5.0 mA 4.0 V
ICBO VCB = 28 V 500 µµA
hFE VCE = 5.0 V IC = 100 mA 20 120 ---
COB VCB = 28 V f = 1.0
MHz 3.5` 5.0 pF
PG
ηηCVCE = 28 V POUT = 1.0 W f = 400 MHz 10
60 12 dB
%
NPN SILICON RF POWER TRANSISTOR
C1-28
The C1-28 is Designed for 28 Volt
Class C Amplifier Applications up to
500 MHz.
FEATURES:
• PG = 12 dB Typ. at 1.0 W/400 MHz
• ηηC = 65 % Typ. at 1.0 W/400 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC250 mA
VCBO 40 V
VCEO 28 V
VEBO 3.5 V
PDISS 7.0 W @ TC = 25 OC
TJ-65 OC to +200 OC
TSTG -65 OC to +150 OC
θθJC 20 OC/W
PACKAGE STYLE .280 4L PILL
MINIMUM
inches / mm
.004 / 0.10
.275 / 6.99
.050 / 1.27
B
C
D
E
F
A
MAXIMUM
.285 / 7.24
.060 . 1.52
.130 / 3.30
.006 / 0.15
inches / mm
1.055 / 26.80
DIM
.220 / 5.59 .230 / 5.84
.118 / 3.00
D
EF
ØB
ØC
A
E
E
CB