PD-94011A IRFP460AS SMPS MOSFET Applications l SMPS, UPS, Welding and High Speed VDSS Power Switching 500V Benefits l Dynamic dv/dt Rating l Repetitive Avalanche Rated l Isolated Central Mounting Hole l Fast Switching l Ease of Paralleling l Simple Drive Requirements l Solder plated and leadformed for surface mounting Description HEXFET(R) Power MOSFET Rds(on) max ID 0.27 20A Third Generation HEXFET(R)s from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. SMD-247 The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. This plated and leadformed version of the TO-247 package allows the package to be surface mounted in an application. Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Mounting torqe, 6-32 or M3 screw Maximum Reflow Temperature Max. 20 13 80 280 2.2 30 3.8 -55 to + 150 Units A W W/C V V/ns C 10 lbf*in (1.1N*m) 230 (Time above 183 C should not exceed 100s) C Typical SMPS Topologies: l Full Bridge l PFC Boost Notes through www.irf.com are on page 8 1 01/17/01 IRFP460AS Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 500 --- --- V VGS = 0V, ID = 250A --- 0.61 --- V/C Reference to 25C, ID = 1mA --- --- 0.27 VGS = 10V, ID = 12A 2.0 --- 4.0 V VDS = VGS , ID = 250A --- --- 25 VDS = 500V, VGS = 0V A --- --- 250 VDS = 400V, VGS = 0V, TJ = 125C --- --- 100 VGS = 30V nA --- --- -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 11 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 18 55 45 39 3100 480 18 4430 130 140 Max. Units Conditions --- S VDS = 50V, ID = 12A 105 ID = 20A 26 nC VDS = 400V 42 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 20A ns --- RG = 4.3 --- RD = 13, See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 400V, = 1.0MHz --- VGS = 0V, VDS = 0V to 400V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. Max. Units --- --- --- 960 20 28 mJ A mJ Typ. Max. Units --- 0.24 --- 0.45 --- 40 C/W Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Diode Characteristics IS ISM VSD trr Qrr ton 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 20 --- --- showing the A G integral reverse --- --- 80 S p-n junction diode. --- --- 1.8 V TJ = 25C, IS = 20A, VGS = 0V --- 480 710 ns TJ = 25C, IF = 20A --- 5.0 7.5 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRFP460AS 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 10 TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 1 4.5V 20s PULSE WIDTH TJ = 25 C 0.1 0.1 1 10 10 4.5V 20s PULSE WIDTH TJ = 150 C 1 1 100 Fig 1. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 3.0 TJ = 150 C 10 TJ = 25 C 1 V DS = 50V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 100 Fig 2. Typical Output Characteristics 100 0.1 4.0 10 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 9.0 20A ID = 19A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFP460AS 100000 VGS , Gate-to-Source Voltage (V) 10000 C, Capacitance (pF) 20 V G S = 0V, f = 1M Hz C is s = C g s + C g d , Cd s SHO RTED C rs s = C g d C oss = C ds + C gd C iss 1000 C o ss 100 C rss 10 1 10 100 VDS = 400V VDS = 250V VDS = 100V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 A 1 20A ID = 19A 0 1000 20 40 60 80 100 Q G , Total Gate Charge (nC) V D S , D ra in-to-S ource V oltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 1000 TJ = 150 C I D , Drain Current (A) ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 100 TJ = 25 C 1 100us 10 1ms 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 10us 1.6 1 TC = 25 C TJ = 150 C Single Pulse 10 10ms 100 1000 10000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFP460AS 20 VGS D.U.T. RG 15 I D , Drain Current (A) RD VDS + -VDD 10V Pulse Width 1 s Duty Factor 0.1 % 10 Fig 10a. Switching Time Test Circuit 5 VDS 90% 0 25 50 75 100 TC , Case Temperature 125 150 ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 0.001 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFP460AS EAS , Single Pulse Avalanche Energy (mJ) 2400 1 5V TOP 2000 D R IV E R L VDS BOTTOM ID 8.9A 13A 20A 1600 D .U .T RG + V - DD IA S 20V 0 .0 1 tp Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp A 1200 800 400 0 25 50 75 100 125 150 Starting TJ , Junction Temperature( C) IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V 620 QGD VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K 12V .2F V D Sa v , A valanche V oltage (V ) QGS 600 580 560 .3F D.U.T. + V - DS 540 A 0 VGS 4 8 12 16 20 I av , A v alanche C urrent (A) 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 Fig 12d. Typical Drain-to-Source Voltage Vs. Avalanche Current www.irf.com IRFP460AS Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + * * * * RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. Period D= + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRFP460AS SMD-247 Package Outline 0.25 [.010] A 5.30 [.208] 4.70 [.186] 3.65 [.143] O 3.55 [.140] 15.90 [.625] 15.30 [.603] B 0.25 [.010] 2.50 [.099] 1.50 [.060] D B 5.70 [.224] 5.30 [.209] 5.50 [.217] 20.30 [.799] 19.70 [.776] 2X R D B 13.70 [.539] 13.50 [.532] 4 2.75 [.108] 2.25 [.089] D 0.95 [.037] 0.35 [.014] 16.20 [.637] 16.00 [.630] 4 3.0 [.118] MAX. C 1 2 3 5.65 [.222] 4.65 [.183] 0.20 [.225] D 5.45 [.215] 2X 1.40 [.055] 1.00 [.040] 0.25 [.010] D C A 2X 2.65 [.104] 2.15 [.085] LEAD AS SIGNMENT S NOT E S: MOSF ET 1. 2. 3. 4. 1 - GAT E 2 - DRAIN 3 - SOURCE 4 - DRAIN DIMENSIONING & T OLERANCING PER ASME Y14.5M-1994. CONT ROLLING DIMENSION: MILLIMET ER. DIMENS IONS ARE SHOWN IN MILLIMET E RS [INCHE S]. T O-247 S MD IS A MODIF IE D T O-247AC. 2X 0.80 [.031] 0.40 [.016] IGBT 1 - GAT E 2 - COLLECT OR 3 - EMIT T ER 4 - COLLECT OR SMD-247 Part Marking Information EXAMPLE: T HIS IS AN IRF P450S WITH AS S EMBLY LOT CODE 3A1Q PART NUMBER INTERNAT IONAL RECT IF IER LOGO IRFP450S 3A1Q 9906 AS S EMBLY LOT CODE DATE CODE (YYWW) YY = YEAR WW = WEEK Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Starting TJ = 25C, L = 4.3mH R G = 25, IAS = 20A. (See Figure 12) ISD 20A, di/dt 125A/s, VDD V(BR)DSS, TJ 150C Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/00 8 www.irf.com