PRELIMINARY APT40SM120J 1200V, 32A, 80m Package APT40SM120J Silicon Carbide N-Channel Power MOSFET S S D G DESCRIPTION Silicon carbide (SiC) power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications. SO 2 T- 27 "UL Recognized" file # E145592 ISOTOP(R) D G S FEATURES / TYPICAL APPLICATIONS SiC MOSFET Features: SiC MOSFET Benefits: Applications: * Low capacitances and low gate charge * High efficiency to enable lighter/compact system * PV inverter, converter and industrial motor drives * Simple to drive and easy to parallel * Smart grid transmission & distribution * Stable operation at high junction temperature, Tj(max) = +175C * Improved thermal capabilities and lower switching losses * Induction heating, and welding * Fast and reliable body diode * Eliminates the need of external Free Wheeling Diode * Power supply and distribution * Fast switching speed due to low internal gate resistance (ESR) * Superior avalanche ruggedness * H/EV powertrain and EV charger * Lower system cost of ownership MAXIMUM RATINGS Symbol VDSS Parameter Drain Source Voltage Ratings Unit 1200 V Continuous Drain Current @ TC = 25C 32 Continuous Drain Current @ TC = 100C 22 IDM Pulsed Drain Current 99 VGS Gate-Source Voltage ID PD 1 A -10 to +25 V Total Power Dissipation @ TC = 25C 165 W Linear Derating Factor 1.1 W/C THERMAL AND MECHANICAL CHARACTERISTICS Symbol RJC Characteristic Min Typ Junction to Case Thermal Resistance Max Unit 0.91 C/W Tj Operating Junction Temperature -55 175 Tstg Storage Junction Temperature Range -55 150 WT Package Weight Torque 050-7696 Rev B 12/2016 Mounting Torque (SOT-227 Package), 6-32 or M3 screw C 1.03 oz 5 10 in*lbf .56 1.13 N*m 1 PRELIMINARY APT40SM120J STATIC CHARACTERISTICS Symbol Parameter Test Conditions Min 1200 V(BR)DSS Drain-Source Breakdown Voltage VGS = 0V, ID = 1mA RDS(on) Drain-Source On Resistance VGS = 20V, ID = 20A VGS(th) Gate-Source Threshold Voltage VGS(th)/TJ 2 VGS = VDS, ID = 1mA Threshold Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current TJ = 25C unless otherwise specified Symbol VDS = 1200V VGS = 0V Typ Parameter V -4.8 mV/C TJ = 25C 100 TJ = 125C 500 Test Conditions Crss Reverse Transfer Capacitance Coss Output Capacitance 100 Min Typ VGS = 0V, VDD = 1000V VGS = 0/20V 130 Gate-Source Charge VDD= 800V 19 Qgd Gate-Drain Charge ID = 20A 35 td(on) Turn-On Delay Time VDD = 800V 10 Current Rise Time VGS = 0/20V ID = 20A RG = 0.7 Current Fall Time Turn-On Switching Energy 4 Eoff Turn-Off Switching Energy td(on) tr td(off) 3 16 50 Turn-On Delay Time VDD = 800V 8 Current Rise Time VGS = 0/20V 6 3 RG = 0.7 ns 17 L = 115 H Turn-On Switching Energy 4 Eoff Turn-Off Switching Energy Freewheeling Diode = APT10SCE120B 60 ESR Equivalent Series Resistance f = 1MHz, 25mV, Drain Short 1.2 SCWT Short Circuit Withstand Time Avalanche Energy, Single Pulse J 36 Eon2 EAS ns 225 Tc = 25C Current Fall Time nC 6 Freewheeling Diode = APT10SCE120B ID = 20A Unit pF 32 L = 115 H Turn-Off Delay Time tf nA 115 Total Gate Charge Turn-Off Delay Time Max 25 f = 1MHz Qg Eon2 A 2085 Qgs tf m DYNAMIC CHARACTERISTICS Input Capacitance tr 100 3.0 VGS = +20V / -10V Ciss td(off) Unit V 80 1.7 Max 225 Tc = 150C J VDS = 960V, VGS = 20V, TC = 25C 5 S VDS = 145V, VGS = 20V, ID = 20A, TC = 25C 2500 mJ Source-Drain Diode Characteristics Symbol Parameter VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Irrm Reverse Recovery Current Test Conditions ISD = 20A, VGS = 0V ISD = 20A, VDD = 800V dI/dt = -1000A/s Min Typ Max Unit 3.8 V 90 ns 265 nC 7.8 A TJ = 25C unless otherwise specified 1 2 3 4 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature Pulse test: Pulse Width < 380s, duty cycle < 2%. RG is total gate resistance including internal gate driver impedance. Eon2 includes energy of APT10SCD120B free wheeling diode. 050-7696 Rev B 12/2016 2 PRELIMINARY APT40SM120J 80 80 V TJ= 25C 60 TJ= 125C TJ= 75C 50 TJ= 175C 40 20V 60 TJ= 150C 30 20 14V 18V 12V 40 10V 20 8V 10 0 0 2 4 6 8 10 12 0 14 0 J J ID, DRAIN CURRENT (A) 18V ID, DRAIN CURRENT (A) 16V 10V 40 8V 20 20 14V T = 175C 12V 20V 60 15 80 14V T = 150C 10 0 5 10 15 20 60 16V 10V 40 8V 20 6V 0 25 0 1.6 NORMALIZED TO T = 25C J VGS = 20V @ 20A 1.4 1.2 1 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) Figure 5, RDS(on) vs Junction Temperature 050-7696 Rev B 12/2016 5 10 15 20 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 4, Output Characteristics 20 2 VGS, GATE-TO-SOURCE VOLTAGE (V) RDS(on), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED TO 25C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 3, Output Characteristics 1.8 12V 20V 18V 6V 0 25 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 1, Output Characteristics 80 5 800 IGS= 1mA IDS= 20A VDS= 800V QGD 15 25 600 QGS VDS 10 400 VGS 200 5 QG 0 0 20 40 60 80 100 120 140 0 VDS, DRAIN-TO-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) J ID, DRAIN CURRENT (A) 70 16V T = 25C = 20V GS QG, GATE CHARGE (nC) Figure 6, Gate Charge Characteristics 3 PRELIMINARY APT40SM120J 60 10000 ID ,DRAIN CURRENT (A) C, CAPACITANCE (pF) 1000 Coss 100 Crss 1 10 100 J 0 VGS 14 -5 VGS -1 VGS 0 VGS -40 -5 -4 -3 -2 -1 0 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Reverse Drain Current vs Drain-to-Source Voltage Third Quadrant Conduction -3 VGS -15 -2 VGS -1 VGS 0 VGS -35 -4 -3 -2 -1 0 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 11, Reverse Drain Current vs Drain-to-Source Voltage Third Quadrant Conduction (NORMALIZED TO 25C) -4 VGS V(BR)DSS, BREAKDOWN VOLTAGE (V) IDS, REVERSE DRAIN CURRENT (A) -5 VGS -10 050-7696 Rev B 12/2016 12 1.1 T = 150C -5 -40 -5 10 -35 J -30 8 -2 VGS -30 -4 -3 -2 -1 0 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Reverse Drain Current vs Drain-to-Source Voltage Third Quadrant Conduction -25 6 -3 VGS -25 -40 -5 -20 4 -4 VGS -20 -35 0 2 J -5 -15 -1 VGS -30 0 -10 -2 VGS -25 TJ= 50C TJ= 25C T = 125C -5 VGS -3 VGS -20 TJ= 100C TJ= 75C VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 8, Output Characteristics ID vs VGS Temperature -4 VGS -15 20 0 T = 25C -10 30 0 IDS, REVERSE DRAIN CURRENT (A) IDS, REVERSE DRAIN CURRENT (A) -5 40 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 7, Capacitance vs Drain-to-Source Voltage 0 TJ= 150C TJ= 125C 10 f = 1MHz VGS = 0V 10 TJ= 175C 50 Ciss I = 1mA D 1.05 1 0.95 0.9 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) Figure 12, Breakdown Voltage vs Temperature 4 PRELIMINARY APT40SM120J 2.0 100 I = 1mA VGS(th), THRESHOLD VOLTAGE (V) 1.8 D (NORMALIZED TO 25C) 1.6 ID, DRAIN CURRENT (A) 1.4 1.2 1.0 0.8 0.6 0.4 10 RDS(on) 10s 1 100s 1ms 10ms 0.1 100ms/DC T = 175C J 0.2 T = 100C C 0 -50 -25 0 25 50 0.01 75 100 125 150 175 1 TJ, JUNCTION TEMPERATURE (C) Figure 13, Threshold Voltage vs Temperature 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 14, Forward Safe Operating Area 0.9 D = 0.9 0.8 0.7 0.7 0.6 0.5 0.5 Note: 0.4 0.3 0.3 t2 0.2 -0 t Duty Factor D = 1 /t2 Peak T J = P DM x Z JC + T C 0.1 0.1 0.05 SINGLE PULSE 10 10 -5 t1 P DM ZJC, THERMAL IMPEDANCE (C/W) 10 10-2 10-3 -4 0.1 1 RECTANGULAR PULSE DURATION (SECONDS) Figure 15, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) * Source 8.9 (.350) 9.6 (.378) Hex Nut M 4 (4 places ) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) Drain *Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Source Gate Dimensions in Millimeters (Inches) 050-7696 Rev B 12/2016 5 PRELIMINARY Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. 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