PRELIMINARY
1
050-7696 Rev B 12/2016
Symbol Parameter Ratings Unit
VDSS Drain Source Voltage 1200 V
ID
Continuous Drain Current @ TC = 25°C 32
A
Continuous Drain Current @ TC = 100°C 22
IDM Pulsed Drain Current 199
VGS Gate-Source Voltage -10 to +25 V
PD
Total Power Dissipation @ TC = 25°C 165 W
Linear Derating Factor 1.1 W/°C
APT40SM120J
1200V, 32A, 80mΩ Package
APT40SM120J
G
D
S
DESCRIPTION
FEATURES / TYPICAL APPLICATIONS
MAXIMUM RATINGS
THERMAL AND MECHANICAL CHARACTERISTICS
Silicon Carbide N-Channel Power MOSFET
Symbol Characteristic Min Typ Max Unit
RθJC Junction to Case Thermal Resistance 0.91 °C/W
TjOperating Junction Temperature -55 175
°C
Tstg Storage Junction Temperature Range -55 150
WTPackage Weight 1.03 oz
Torque Mounting Torque (SOT-227 Package), 6-32 or M3 screw
5 10 in·lbf
.56 1.13 N·m
ISOTOP®
S OT-227
file # E145592
"UL Recognized"
GS
S
D
Silicon carbide (SiC) power MOSFET product line from Microsemi increase your performance over
silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage
applications.
SiC MOSFET Features:
• Low capacitances and low gate charge
• Fast switching speed due to low internal
gate resistance (ESR)
• Stable operation at high junction
temperature, Tj(max) = +175C
• Fast and reliable body diode
• Superior avalanche ruggedness
SiC MOSFET Benets:
• Highe󰀩ciencytoenablelighter/compact
system
• Simple to drive and easy to parallel
• Improved thermal capabilities and lower
switching losses
• Eliminates the need of external Free
Wheeling Diode
• Lower system cost of ownership
Applications:
• PV inverter, converter and industrial motor
drives
• Smart grid transmission & distribution
• Induction heating, and welding
• H/EV powertrain and EV charger
• Power supply and distribution
PRELIMINARY
2
050-7696 Rev B 12/2016
Symbol Parameter Test Conditions Min Typ Max Unit
Ciss Input Capacitance VGS = 0V, VDD = 1000V
f = 1MHz
2085
pFCrss Reverse Transfer Capacitance 25
Coss Output Capacitance 115
QgTotal Gate Charge VGS = 0/20V
VDD= 800V
ID = 20A
130
nCQgs Gate-Source Charge 19
Qgd Gate-Drain Charge 35
td(on) Turn-On Delay Time VDD = 800V
VGS = 0/20V
ID = 20A
RG=0.7Ω3
L = 115 µH
Tc = 25°C
Freewheeling Diode = APT10SCE120B
10
ns
trCurrent Rise Time 6
td(o󰀨) Turn-O󰀨DelayTime 32
tfCurrent Fall Time 16
Eon2 Turn-On Switching Energy 4225 µJ
Eo󰀨 Turn-O󰀨SwitchingEnergy 50
td(on) Turn-On Delay Time VDD = 800V
VGS = 0/20V
ID = 20A
RG=0.7Ω3
L = 115 µH
Tc = 150°C
Freewheeling Diode = APT10SCE120B
8
ns
trCurrent Rise Time 6
td(o󰀨) Turn-O󰀨DelayTime 36
tfCurrent Fall Time 17
Eon2 Turn-On Switching Energy 4225 µJ
Eo󰀨 Turn-O󰀨SwitchingEnergy 60
ESR Equivalent Series Resistance f = 1MHz, 25mV, Drain Short 1.2 Ω
SCWT Short Circuit Withstand Time VDS = 960V, VGS = 20V, TC = 25°C 5μS
EAS Avalanche Energy, Single Pulse VDS = 145V, VGS = 20V, ID = 20A, TC = 25°C 2500 mJ
APT40SM120J
TJ = 25°C unless otherwise specied
STATIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
TJ = 25°C unless otherwise specied
Source-Drain Diode Characteristics
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature
2 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
3 RG is total gate resistance including internal gate driver impedance.
4 Eon2 includes energy of APT10SCD120B free wheeling diode.
Symbol Parameter Test Conditions Min Typ Max Unit
V(BR)DSS Drain-Source Breakdown Voltage VGS = 0V, ID = 1mA 1200 V
RDS(on) Drain-Source On Resistance 2VGS = 20V, ID = 20A 80 100 mΩ
VGS(th) Gate-Source Threshold Voltage VGS = VDS, ID = 1mA 1.7 3.0 V
∆VGS(th)/∆TJThresholdVoltageTemperatureCoe󰀩cient -4.8 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 1200V
VGS = 0V
TJ = 25°C 100 µA
TJ = 125°C 500
IGSS Gate-Source Leakage Current VGS = +20V / -10V ±100 nA
Symbol Parameter Test Conditions Min Typ Max Unit
VSD Diode Forward Voltage ISD = 20A, VGS = 0V 3.8 V
trr Reverse Recovery Time
ISD = 20A, VDD = 800V
dI/dt = -1000A/µs
90 ns
Qrr Reverse Recovery Charge 265 nC
Irrm Reverse Recovery Current 7.8 A
PRELIMINARY
3
050-7696 Rev B 12/2016
APT40SM120J
0
5
10
15
20
0
200
400
600
800
0 20 40 60 80 100 120 140
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
−50 −25 0255075100 125 150 175
0
20
40
60
80
0510 15 20 25
0
20
40
60
80
0510 15 20 25
0
20
40
60
80
0510 15 20 25
0
10
20
30
40
50
60
70
80
0246810 12 14
TJ= 125°C
TJ = 25°C
TJ, JUNCTION TEMPERATURE (°C)
Figure 5, RDS(on) vs Junction Temperature
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics
ID, DRAIN CURRENT (A)
VGS= 20V
TJ= 25°C
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
ID, DRAIN CURRENT (A)
TJ = 150°C
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 3, Output Characteristics
ID, DRAIN CURRENT (A)
TJ = 175°C
20V
10V
18V
14V
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 4, Output Characteristics
ID, DRAIN CURRENT (A)
16V
12V
8V
6V
20V
10V
18V
14V
16V
12V
8V
6V
20V
10V
18V
14V
16V
12V
8V
TJ= 175°C
RDS(on), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED TO 25°C)
QG, GATE CHARGE (nC)
Figure 6, Gate Charge Characteristics
VGS, GATE-TO-SOURCE VOLTAGE (V)
QGD
QGS
VDS
VGS
QG
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
TJ= 150°C
IGS= 1mA
IDS= 20A
VDS= 800V
TJ= 75°C
NORMALIZED TO
TJ = 25°C
VGS = 20V @ 20A
PRELIMINARY
4
050-7696 Rev B 12/2016
APT40SM120J
0
10
20
30
40
50
60
0 2 4 6 8 10 12 14
10
100
1000
10000
110 100 1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 7, Capacitance vs Drain-to-Source Voltage
Coss
Ciss
Crss
f = 1MHz
VGS = 0V
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 8, Output Characteristics ID vs VGS Temperature
ID ,DRAIN CURRENT (A)
−40
−35
−30
−25
−20
−15
−10
−5
0
−5 −4 −3 −2 −1 0
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Reverse Drain Current vs Drain-to-Source Voltage
Third Quadrant Conduction
IDS, REVERSE DRAIN CURRENT (A)
TJ = 25°C
-5 VGS
-4 VGS
-3 VGS
-2 VGS
-1 VGS
0 VGS
−40
−35
−30
−25
−20
−15
−10
−5
0
−5 −4 −3 −2 −1 0
−40
−35
−30
−25
−20
−15
−10
−5
0
−5 −4 −3 −2 −1 0
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Reverse Drain Current vs Drain-to-Source Voltage
Third Quadrant Conduction
IDS, REVERSE DRAIN CURRENT (A)
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 11, Reverse Drain Current vs Drain-to-Source Voltage
Third Quadrant Conduction
IDS, REVERSE DRAIN CURRENT (A)
TJ = 150°C
TJ = 125°C
C, CAPACITANCE (pF)
TJ= 150°C
TJ= 125°C
TJ= 75°C
TJ= 25°C
TJ= 175°C
TJ= 50°C
TJ= 100°C
0.9
0.95
1
1.05
1.1
−50 −25 0255075 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 12, Breakdown Voltage vs Temperature
V(BR)DSS, BREAKDOWN VOLTAGE (V)
(NORMALIZED TO 25°C)
-5 VGS
-4 VGS
-3 VGS
-2 VGS
-1 VGS
0 VGS
-5 VGS
-4 VGS
-3 VGS
-2 VGS
-1 VGS
0 VGS
ID = 1mA
PRELIMINARY
5
050-7696 Rev B 12/2016
0.01
0.1
1
10
100
1 10 100 1000
−0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
10
10-4 10-3 10-2 0.1 1
10-5
APT40SM120J
Dimensions in Millimeters (Inches)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M 4
(4 places )
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source Drain
Gate
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
SOT-227 (ISOTOP®) Package Outline
10ms
100µs
100ms/DC
1ms
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 14, Forward Safe Operating Area
ID, DRAIN CURRENT (A)
10µs
RDS(on)
TJ = 175°C
TC = 100°C
ZθJC, THERMAL IMPEDANCE (°C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 15, Maximum E󰀨ective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.5
0.1
0.05
Peak T
J
= P
DM
x Z
θJC + TC
Duty Factor D = t1/t2
t2
t1
P
DM
Note:
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
−50 −25 0255075100 125 150 175
ID = 1mA
TJ, JUNCTION TEMPERATURE (°C)
Figure 13, Threshold Voltage vs Temperature
VGS(th), THRESHOLD VOLTAGE (V)
(NORMALIZED TO 25°C)
*Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
Microsemi Corporation (Nasdaq: MSCC) o󰀨ers a comprehensive portfolio of semiconductor and system solutions for communica-
tions, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-
signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time
solutions, setting the world’s standard for time; voice processing devices; RF solutions; discrete components; security technologies and scal-
able anti-tamper products; Ethernet Solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and ser-
vices. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 4,800 employees globally. Learn more at www.microsemi.com.
©2016 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are registered trademarks of Microsemi Corporation. All other
trademarks and service marks are the property of their respective owners.
Microsemi Corporate Headquarters
One Enterprise, Aliso Viejo, CA 92656 USA
Within the USA: +1 (800) 713-4113
Outside the USA: +1 (949) 380-6100
Sales: +1 (949) 380-6136
Fax: +1 (949) 215-4996
email: sales.support@microsemi.com
www.microsemi.com
PRELIMINARY
Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does
Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been
subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not veri-
fied, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and
performance specifications or parameters provided by Microsemi. It is the Buyer’s responsibility to independently determine suitability of any products and to test and verify the same. The information
provided by Microsemi hereunder is provided “as is, where is” and with all faults, and the entire risk associated with such information is entirely with the Buyer. Microsemi does not grant, explicit-
ly or implicitly, to any party any patent rights, licenses, or any other IP rights, whether with regard to such information itself or anything described by such information. Information provided in this
document is proprietary to Microsemi, and Microsemi reserves the right to make any changes to the information in this document or to any products and services at any time without notice.
6
050-7696 Rev B 12/2016