PROGRAMMABLE THRESHOLD COUPLER ISOLATION | CURRENT TYPICAL rion VOLTAGE (Vpy)| TRANSFER USEC.) Vee Isat) . MIN. RATIO MIN. Tr Tr . H11A10 1500 a 2 2 GE TYPE AC INPUT COUPLER H11AA1 H11AA2 HIGH VOLTAGE COUPLER 2500 1500 1500 1500 1500 1775 Vas PHOTO DARLINGTON OUTPUT H11B1 2500 H11B2 1500 H11B3 1500 H11B255 1500 H15B1 4000 Vams H15B2 4000 Vams 4N29 2500 4N29A 1775 Vrms 4N30 1500 4N31 1500 4N32 2500 4N33 4N32A 1775 Vans 1500 PHOTO SCR OUTPUT ISOLATION | If TRIGGER] tp 100C | BLOCKING TYPICAL GE TYPE VOLTAGE MIN. ) | (MAX.) uA | VOLTAGE (MIN.)| TON @sec.) | YF (MAX) PHOTON COUPLED INTERRUPTER MODULE PAGE BVEco TYPICAL Vce(sat) Ip (nA NO. OUTPUT CURRENT p (nA) (Vv) [TON GSEQ) [ty (SEC) MAX, H13A1 Ip = 20mA 200uA 30 : H13A2 Tr = 20mA SOKA 30 H13B1 Ir = 20mA 2500HA 25 H13B2 IF = 20mA 1000HA 25 GE TYPE MATCHED EMITTER DETECTOR PAIRS 129 Photon Coupled Isolator H11B1-H11B2-H11B3 Ga As Infrared Emitting Diode & NPN Silicon Photo-Darlington Amplifier The General Electric H11B1, H11B2 and H11B3 are gallium NOTE sigo. man a, i a wor arsenide, infrared emitting diodes coupled with a silicon photo- R TT LILIt 7 B | 300, Rerlre2 | REF] 2 darlington amplifier in a dual in-line package. tT | & |ororvew | e ae foo) [soe | 4 F 4 O70}1.01 1.78 ; neo tere 1 |S |PSbe re absolute maximum ratings: (25C) roe |g oder 1 [098] 942} 203/s05) * afr fe fel N [ors 381 s 3 INFRARED EMITTING DIODE + p 375 9.63 oT TIT og ccmetitaol | Lf Las deals bee Power Dissipation *100 milliwatts | I PLANE Kw rit NO rere shatl be a permanent indication of term - Forward Current (Continuous) 60 milliamps a res 4 lp . tein " ee oeecent 8 Forward Current (Peak) 3 ampere | sot Kfos Fo maa (Pulse width 1 psec 300 P Ps) 5. Four places, Reverse Voltage 3 volts *Derate 1.33mW/C above 25C ambient. TOTAL DEVICE Storage Temperature -55 to 150C Operating Temperature -55 to 100C Pp = HOTO-DARLINGTON Lead Soldering Time (at 260C) 10 seconds Power Dissipation **150 milliwatts Surge Isolation Voltage (Input to Output). VcKo 25 volts H11B1 2500V (peak) 1770V RMs) Ve BO 30 volts Hi 1B2, B3 1500V (peak) 1060V (Rm S) Veco 7 volts Steady-State Isolation Voltage (Input to Output). Collector Current (Continuous) 100 milliamps H11B1 1500V @eak) 1060V Rms) **Derate 2,0mW/C above 25C ambient. H11B2, B3 9S50V (peak) V (RMS) individual electrical characteristics (25C) INFRARED EMITTING DIODE | Typ. | MAX. UNITS PHOTO-TRANSISTOR MIN.| TYP.|MAX.| UNITS Forward Voltage Breakdown Voltage Vigryceo | 25 | | | volts H11B1, B2 (I; = 10mA) 1.1 | 1.5 | volts (Ic = 10mA, Ip = O) H11B3 (Ip = 50mA) 1.1 1.5 | volts Breakdown Voltage V(grycpo | 30 | | | volts Reverse Current (Ic = 100uA, Ip = O) (Vp =3V) _ 10 | microamps Breakdown Voltage VigryEco 7) - |volts (Ig = 100uA, Ip = O) Collector Dark Current Icro ~ 5 | 100 | nanoamps (Vcr = 10V, Ip = O) Capacitance Capacitance - 6 | |picofarads (V = 0,f = 1MHz) 50 | picofarads (Vcr = 10V,f = 1MHz) coupled electrical characteristics (25C) MIN. | TYP. | MAX. UNITS | DC Current Transfer Ratio (Ip = 1mA, Vcg = 5V) Hi1B1 500 %o H11B2 200 _ % HI1B3 100 - |% Saturation Voltage -- Collector to Emitter (Ip = 1mA, Ic = 1mA) _ 0.7 1.0 | volts Isolation Resistance (Input to Output Voltage = 500Vpc) 100 _ gigaohms Input to Output Capacitance (Input to Output Voltage = O,f = 1MHz) _ 2 picofarads Switching Speeds: (Vcg = 10V, Ic = 10mA, Ry = 10022) On-Time 125 ~ microseconds Off-Time 100 microseconds 1293 | H11B1, H11B2, H11B3 Tegg- NORMALIZED OUTPUT CURRENT - FORWARD CURRENT - mA I 100 1,000 - 100 O01 -O1 0Ol Togq OUTPUT CURRENT-mA 1.0 TYPICAL CHARACTERISTICS NORMALIZED TO: Vee = SV Tp =tmA 10 100 I, -INPUT CURRENT -mA OUTPUT CURRENT VS INPUT CURRENT / Lo | L 5 Ve - FORWARD VOLTAGE - VOLTS 2.0 INPUT CHARACTERISTICS LOAD RESISTANCE 1On Ol 0.01 al NORMALIZED TO VoE 2 IOV RLF 100n Togo? toma ! 10 100 NORMALIZED SWITCHING SPEED tat ty + tet te SWITCHING SPEED VS OUTPUT CURRENT 1294 -NORMALIZED OUTPUT CURRENT 1 ce0 NORMALIZED TO. Vee = 5V Te eima Ty = 25C Togo ~NORMALIZED OUTPUT CURRENT Ot - 55 -15 25 65 too Ta- AMBIENT TEMPERATURE - C OUTPUT CURRENT VS TEMPERATURE NORMALIZED TO: Vee = 5V = LOmA Ol 1.0 10 100 Voge - COLLECTOR TO EMITTER VOLTAGE - VOLTS OUTPUT CHARACTERISTICS 3 a 5 > 105 102 NORMALIZED TO: Ver = 1OV Ip = 0 Ta = +25C 10! To Eg - NORMALIZED DARK CURRENT Go +25 +45 +65 +85 +100 Ta ~AMBIENT TEMPERATURE - C NORMALIZED DARK CURRENT VS TEMPERATURE