Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - (c) NXP N.V. (year). All rights reserved or (c) Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - (c) Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D050 BAS45A Low-leakage diode Product data sheet Supersedes data of June 1994 1996 Mar 13 NXP Semiconductors Product data sheet Low-leakage diode BAS45A FEATURES DESCRIPTION * Continuous reverse voltage: max. 125 V Epitaxial medium-speed switching diode with a low leakage current in a hermetically-sealed glass SOD68 (DO-34) package. * Repetitive peak forward current: max. 625 mA * Low reverse current: max. 1 nA k handbook, halfpage a * Switching time: typ. 1.5 s. MAM156 APPLICATION * Low leakage current applications. Fig.1 Simplified outline (SOD68; DO-34) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. - 125 V - 125 V - 250 mA - 625 mA tp = 1 s - 4 A tp = 1 ms - 1 A tp = 1 s - 0.5 A Tamb = 25 C - 300 VRRM repetitive peak reverse voltage VR continuous reverse voltage IF continuous forward current IFRM repetitive peak forward current IFSM non-repetitive peak forward current square wave; Tj = 25 C prior to surge; see Fig.4 see Fig.2; note 1 UNIT Ptot total power dissipation Tstg storage temperature -65 +175 C Tj junction temperature - 175 C Note 1. Device mounted on a printed-circuit board without metallization pad. 1996 Mar 13 2 mW NXP Semiconductors Product data sheet Low-leakage diode BAS45A ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current CONDITIONS TYP. MAX. UNIT see Fig.3 IF = 1 mA - 780 mV IF = 10 mA - 860 mV IF = 100 mA - 1 000 mV VR = 125 V; Emax = 100 lx - 1 nA VR = 30 V; Tj = 125 C; Emax = 100 lx - 300 nA VR = 125 V; Tj = 125 C; Emax = 100 lx - 500 nA VR = 125 V; Tj = 150 C; Emax = 100 lx - 2 A - 4 pF 1.5 - s see Fig.5 Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point 8 mm from the body 300 K/W Rth j-a thermal resistance from junction to ambient lead length 10 mm; note 1 500 K/W Note 1. Device mounted on a printed-circuit board without metallization pad. 1996 Mar 13 3 NXP Semiconductors Product data sheet Low-leakage diode BAS45A GRAPHICAL DATA MBG522 300 MBG523 300 handbook, halfpage handbook, halfpage IF (mA) IF (mA) (1) 200 200 100 100 0 0 100 Tamb (oC) (2) (3) 0 0 200 0.5 Device mounted on a printed-circuit board without metallization pad. (1) Tj = 150 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values. Fig.2 Fig.3 Maximum permissible continuous forward current as a function of ambient temperature. 1.0 VF (V) 1.5 Forward current as a function of forward voltage. MBG704 102 handbook, full pagewidth IFSM (A) 10 1 10-1 1 10 102 103 tp (s) Based on square wave currents;Tj = 25 C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Mar 13 4 104 NXP Semiconductors Product data sheet Low-leakage diode BAS45A MBD456 4 10halfpage handbook, IR (nA) 3 MBG524 3 handbook, halfpage Cd (pF) 10 2 max 10 2 typ 10 1 1 10 1 0 50 100 T j ( oC) 0 150 0 5 VR = 125 V. f = 1 MHz; Tj = 25 C. Fig.5 Fig.6 Reverse current as a function of junction temperature. handbook, full pagewidth tr 10 15 VR (V) 20 Diode capacitance as a function of reverse voltage; typical values. tp t D.U.T. RS = 50 V = VR IF x R S IF 10% IF SAMPLING OSCILLOSCOPE t R i = 50 MGA881 (1) 90% VR input signal Fig.7 Reverse recovery time test circuit and waveforms. 1996 Mar 13 t rr 5 output signal NXP Semiconductors Product data sheet Low-leakage diode BAS45A PACKAGE OUTLINE handbook, full pagewidth 0.55 max 1.6 max 25.4 min 3.04 max 25.4 min Dimensions in mm. The black marking band indicates the cathode. Fig.8 SOD68 (DO-34). 1996 Mar 13 6 MSA212 - 1 NXP Semiconductors Product data sheet Low-leakage diode BAS45A DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 1996 Mar 13 7 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com (c) NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 1996 Mar 13