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DATA SH EET
Product data sheet
Supersedes data of June 1994
1996 Mar 13
DISCRETE SEMICONDUCTORS
BAS45A
Low-leakage diode
db
ook, halfpage
M3D050
1996 Mar 13 2
NXP Semiconductors Product data sheet
Low-leakage diode BAS45A
FEATURES
•Continuous reverse voltage:
max. 125 V
•Repetitive peak fo rward current:
max. 625 mA
•Low reverse cu rrent: max. 1 nA
•Switching time: typ. 1.5 μs.
APPLICATION
•Low leakage curr ent applications.
DESCRIPTION
Epitaxial medium-speed sw itching diode with a low leaka ge c urrent in a
hermetically-sealed glass SOD68 (DO-34) package.
Fig.1 Simplified outline (SOD68; DO-34) and symb ol.
handbook, halfpage
MAM156
k
a
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g S ystem (IEC 134).
Note
1. Device mounted on a pr inted-circuit board without metallization pad.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage −125 V
VRcontinuous revers e voltage −125 V
IFcontinuous forward current see Fig.2; note 1 −250 mA
IFRM repetitive peak forward current −625 mA
IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
tp = 1 μs−4 A
tp = 1 ms −1 A
tp = 1 s −0.5 A
Ptot total power dissipation Tamb = 25 °C−300 mW
Tstg storage temperature −65 +175 °C
Tjjunction temperature −175 °C
1996 Mar 13 3
NXP Semiconductors Pr oduct data shee t
Low-leakage diode BAS45A
ELECTRICAL CHARACTERISTIC S
Tj = 25 °C unless otherwise specified.
THERMAL CHARACTE RISTICS
Note
1. Device mounted o n a printed-circuit board w i thout metallization pad.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VFforward voltage see Fig.3
IF = 1 mA −780 mV
IF = 10 mA −860 mV
IF = 100 mA −1 000 mV
IRreverse current see Fig.5
VR = 125 V; Emax = 100 lx −1nA
VR = 30 V; Tj = 125 °C; Emax = 100 lx −300 nA
VR = 125 V; Tj = 125 °C; Emax = 100 lx −500 nA
VR = 125 V; Tj = 150 °C; Emax = 100 lx −2μA
Cddiode capacitan ce f = 1 MHz; VR = 0; see Fig.6 −4pF
trr reverse recove ry time when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured at
IR = 1 mA; see Fig.7
1.5 − μs
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point 8 mm from the body 300 K/W
Rth j-a thermal resistance from junction to ambient lead length 10 mm; note 1 500 K/W
1996 Mar 13 4
NXP Semiconductors Pr oduct data shee t
Low-leakage diode BAS45A
GRAPHICAL DATA
Device mounted on a printed-circuit board without metallization pad.
Fig.2 Maximum pe rmissible continuous forward
current as a function of ambient temperature.
handbook, halfpage
0 100
IF
(mA)
200
300
0
100
200
MBG522
Tamb (oC)
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; max i mum values .
Fig.3 Forward curr ent as a function of forward
voltage.
handbook, halfpage
0 1.00.5 1.5
300
0
100
200
MBG523
VF (V)
IF
(mA)
(1) (2) (3)
Fig.4 Maximum permissible non-repetitive peak forward current as a function o f pu lse duration.
Based on square wave currents;Tj = 25 °C prior to surge.
handbook, full pagewidth
MBG704
10 tp (μs)
1
IFSM
(A)
10
2
10
−1
10
4
10
2
10
3
10
1
1996 Mar 13 5
NXP Semiconductors Pr oduct data shee t
Low-leakage diode BAS45A
VR = 125 V.
Fig.5 Reverse current as a function of junc tion
temperature.
handbook, halfpage
104
103
102
10
10 1150500
MBD456
100
1
IR
(nA)
T ( C)
o
j
typ
max
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj = 25 °C.
handbook, halfpage
01020155
3
2
0
1
MBG524
VR (V)
Cd
(pF)
handbook, full pagewidth
trr
(1)
IFt
output signal
trt
tp
10%
90%
VR
input signal
V = V I x R
RF S
R = 50
SΩIF
D.U.T.
R = 50
iΩ
SAMPLING
OSCILLOSCOPE
MGA881
Fig.7 Reverse reco very time test circuit and waveforms.
1996 Mar 13 6
NXP Semiconductors Pr oduct data shee t
Low-leakage diode BAS45A
PACKAGE OUTLINE
Fig.8 SOD68 (DO-34).
Dimensions in mm.
The black marking band indicates the cathode.
handbook, full pagewidth
1.6
max 25.4 min 25.4 min
3.04
max
0.55
max
MSA212 - 1
1996 Mar 13 7
NXP Semiconductors Product data sheet
Low-leakage diode BAS45A
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s ) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable . H ow ev er, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequenc es of use of such information.
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reserves the right to make changes to information
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specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
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Applications ⎯ Applications that are described herein for
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NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification .
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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products are sold subject to the general terms and
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case of any incons istency or conflict betw een information
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will prevail.
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that is open for accept ance or the grant, c onveyance or
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regulations. Export might require a prior authorization from
national author ities.
Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
Contact information
For additional information p lease visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this document d oes not form part o f an y q uotation or contra ct, is b elieve d t o b e a ccur ate a nd re li a ble and may be change d
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Printed in The Netherlands 1996 Mar 13
