Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: SMBR1640 Single Anode General Description: 40 V 15 A (Super Low Ir) ELECTRICAL CHARACTERISTICS SYM DC Blocking Voltage: Ir=1mA(for wafer form) VRRM Ir=0.5mA (for dice form) Average Rectified Forward Current IFAV Maximum Instantaneous Forward Voltage @ 15 Ampere, Ta=25C VF MAX @ 20 Ampere, Ta=25C Maximum Instantaneous Reverse Voltage @ VR= 40 Volt, Ta=25C IR MAX Maximum Junction Capacitance @ 0V, 1MHZ MAXIMUM RATINGS Nonrepetitive Peak Surge Current Operating Junction Temperature Storage Temperature Spec. Limit 40 Die Sort 42.5 15 Amp 0.62 0.75 0.6 0.72 Volt 0.09 0.08 mA Cj MAX IFSM Tj TSTG UNIT Volt pF 225 -65 to +125 -65 to +125 Amp C C Specifications apply to die only. Actual performance may degrade when assembled. MEMT does not guarantee device performance after assembly. Data sheet information is subjected to change without notice. DICE OUTLINE DRAWING A C ITEM Die Size Top Metal Pad Size Passivation Seal Thickness (Min) Thickness (Max) um2 3116 3016 3036 254 305 Mil2 122.67 118.70 119.50 10.00 12.00 PS: B Top-side Metal D DIM A B C D SiO2 Passivation P+ Guard Ring Back-side Metal (1)Cutting street width is around 80um(3.14mil). (2)Both of top-side and back-side metals are Ti/Ni/Ag.