SCHOTTKY DIE SPECIFICATION TYPE: SMBR1640
40 V 15 A (Super Low Ir) Single Anode
SYM Die Sort UNIT
DC Blocking Voltage: Ir=1mA(for wafer form) VRRM 42.5 Volt
Ir=0.5mA (for dice form) IFAV Amp
VF MAX 0.6 Volt
0.72
IR MAX 0.08 mA
Cj MAX pF
IFSM Amp
Tj °C
TSTG °C
Specifications apply to die only. Actual performance may degrade when assembled.
MEMT does not guarantee device performance after assembly.
Data sheet information is subjected to change without notice.
DIM um2Mil2
A3116 122.67
B3016 118.70
C3036 119.50
D254 10.00
305 12.00
Operating Junction Temperature
Storage Temperature
ITEM
Die Size
DICE OUTLINE DRAWING
Maximum Junction Capacitance @ 0V, 1MHZ
MAXIMUM RATINGS
Nonrepetitive Peak Surge Current
@ VR= 40 Volt, Ta=25°C
ELECTRICAL CHARACTERISTICS
Average Rectified Forward Current
Maximum Instantaneous Forward Voltage
General Description:
225
-65 to +125
-65 to +125
0.62
0.75
@ 15 Ampere, Ta=25°C
@ 20 Ampere, Ta=25°C
Maximum Instantaneous Reverse Voltage
PS:
(1)Cutting street width is around 80um(3.14mil).
(2)Both of top-side and back-side metals are Ti/Ni/Ag.
Thickness (Max)
0.09
Top Metal Pad Size
Passivation Seal
Thickness (Min)
Micro-Electro-Magnetical Tech Co.
Spec. Limit
40
15
B
C
A
Top-side Metal
DSiO2 Passivation
P+ Guard Ring
Back-side Metal
