Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™
Compact IGBT
Series Module
600 Amperes/600 Volts
MG600J2YS61A
15/05
Description:
Powerex Dual IGBTMOD™
Compact IGBT Series Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half-
bridge confi guration, with each
transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplifi ed system assembly and
thermal management.
Features:
£ Over-Current and
Over-Temperature Protection
£ Low VCE(sat)
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ UPS
£ Welding Power Supplies
£ Laser Power Supplies
Ordering Information:
Example: Select the complete
part number from the table below
-i.e. MG600J2YS61A is a
600V (VCES), 600 Ampere
Dual IGBTMOD™ Compact IGBT
Series Module.
Type Current Rating VCES
Amperes Volts (x 10)
MG 600 60
Dimensions Inches Millimeters
A 4.80±0.04 122.0±1.0
B 1.97±0.01 50.0±0.3
C 1.61±0.03 41.0±0.8
D 4.33±0.01 110.0±0.3
E 2.44±0.04 62.0±1.0
F 2.32±0.02 59.0±0.5
G 4.69±0.02 119.0±0.5
H 0.60 15.24
J 0.63 16.0
K 0.51 13.0
L 0.24 6.0
M 0.22 Dia. 5.5 Dia.
N 1.42±0.03 36.0±0.8
Dimensions Inches Millimeters
P M6 M6
Q 0.79±0.03 20.0±0.8
R 1.02±0.03 26.0±0.8
S 1.44±0.03 36.7±0.8
T 0.24 Rad. 6.0 Rad.
U 0.02 0.64
V 0.60 15.3
W 0.41±0.03 10.5±0.8
X 1.02 -0.01/+0.04 26.0 -0.3/+1.0
Y 1.48 -0.02/+0.04 37.5 -0.5/+1.0
Z 0.01 Dia. 3.0 Dia.
AA 1.00±0.023 25.4±0.6
BB 0.10 2.54
Outline Drawing and Circuit Diagram
7
5
3
1
DETAIL "A"
A
B
L
M
E
C
D
F
G
Y
AA
BB
BB
BB
Q
X
X
J
H
K
E2 C1
C2E1
DETAIL "A"
8
6
4
2
5
6
7
4
1
2
3
E2
OT
FO
FO
C1
E1/C2
W
W
Z
U
V
P
N
R
Q
R S
1 G(L)
2 FO(L)
5 G(H)
6 FO(H)
3 E(L)
4 VD
7 E(H)
8 OPEN
SIGNAL TERMINAL
T
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
MG600J2YS61A
Dual IGBTMOD™
Compact IGBT Series Module
600 Amperes/600 Volts
2 5/05
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Characteristics Symbol MG600J2YS61A Units
Power Device Junction Temperature Tj -20 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Operating Temperature Range T
ope -20 ~ 100 °C
Mounting Torque, M5 Mounting Screws — 31 in-lb
Mounting Torque, M6 Main Terminal Screws — 40 in-lb
Module Weight (Typical) — 375 Grams
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal VISO 2500 Volts
IGBT Inverter Sector
Collector-Emitter Voltage VCES 600 Volts
Gate-Emitter Voltage VGES ±20 Volts
Collector Current (TC = 25°C) IC 600 Amperes
Peak Collector Current (TC = 25°C) ICP 1200 Amperes
Emitter Current (TC = 25°C) IE 600 Amperes
Peak Emitter Current (TC = 25°C) IEM 1200 Amperes
Collector Dissipation (TC = 25°C) PC 2770 Watts
IGBT Control Sector
Control Voltage (OT) VD 20 Volts
Fault Input Voltage VFO 20 Volts
Fault Input Current IFO 20 mA
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
IGBT Inverter Sector
Gate Leakage Current IGES VGE = ±20V, VCE = 0V — — -4 / +3 mA
VGE = 10V, VCE = 0V — — 100 nA
Collector-Emitter Cutoff Current ICES VCE = 600V, VGE = 0V — — 1.0 mA
Gate-Emitter Cutoff Voltage VGE(off) VCE = 5V, IC = 600mA 6.0 7.0 8.0 Volts
Collector-Emitter Saturation Voltage VCE(sat) VGE = 15V, IC = 600A, Tj = 25°C — 2.2 2.5 Volts
VGE = 15V, IC = 600A, Tj = 125°C — — 2.8 Volts
Input Capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz — 125 — nF
Inductive Load td(on) 0.1 — 1.0 µs
Switching toff VCC = 300V, IC = 600A, — — 2.0 µs
Times tf VGE = ±15V, RG = 5.1Ω — — 0.5 µs
Reverse Recovery Time trr — — 0.5 µs
Emitter-Collector Voltage VEC IE = 600A — 2.2 2.6 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
MG600J2YS61A
Dual IGBTMOD™
Compact IGBT Series Module
600 Amperes/600 Volts
35/05
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Control Sector
Fault Output Current OC VGE = 15V 720 — — A
Over-Temperature OT — 100 — 125 °C
Fault Output Delay Time td(Fo) VCC = 300V, VGE = ±15V — — 6.5 µs
Thermal Characteristics
Characteristic Symbol Condition Min. Typ. Max. Units
Junction to Case Thermal Resistance Rth(j-c)Q IGBT (Per 1/2 Module) — — 0.045 °C/Watt
Rth(j-c)D
FWDi (Per 1/2 Module) — — 0.068 °C/Watt
Contact Thermal Resistance Rth(c-f) — — 0.013 — °C/Watt
Recommended Conditions for Use
Characteristic Symbol Condition Value Units
Supply Voltage VCC Applied across C1-E2 Terminals ≤375 Volts
Gate Voltage VGE — 13.8 ~ 16 Volts
Gate Resistance RG — ≥5.1 Ω
Switching Frequency fC — 0 ~ 20 kHz
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
0 5 10 15 20
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT, IC, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
100
200
300
0
600
100
200
300
0
600
12
6
0
2
4
8
10
0 53 41 2
COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS)
Tj = 25°C
Tj = 25°C Tj = 25°C
FREE-WHEEL DIODE CHARACTERISTICS
(TYPICAL)
0 3.01.5 2.0 2.50.5 1.0
VGE = 0V
Tj = 25°C
Tj = 125°C
Tj = -40°C
IC = 900A
IC = 600A
IC = 300A
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
0 5 10 15 20
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
12
6
0
2
4
8
10
Tj = 125°C
IC = 900A
IC = 600A
IC = 300A
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
0 5 10 15 20
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
12
6
0
2
4
8
10
Tj = -40°C
IC = 900A
IC = 600A
IC = 300A
COLLECTOR CURRENT, IC, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
100
200
300
0
600
400 400400
500 500500
0 53 41 2
COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS)
VGE = 20V
15V
12V
10V
9V
VGE = 20V
15V
12V
10V
9V
FORWARD CURRENT, IF, (AMPERES)
FORWARD VOLTAGE, VF, (VOLTS)
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
MG600J2YS61A
Dual IGBTMOD™
Compact IGBT Series Module
600 Amperes/600 Volts
4 5/05
103
102
101
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING TIME, tf, (µs)
FALL TIME VS.
COLLECTOR CURRENT
(TYPICAL)
103
102
101
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING TIME, tr, (µs)
RISE TIME VS.
COLLECTOR CURRENT
(TYPICAL)
104
103
102
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING TIME, td(off), (µs)
TURN-OFF DELAY TIME VS.
COLLECTOR CURRENT
(TYPICAL)
VCC = 300V
VGE = ±15V
RG = 5.1Ω
104
103
102
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING TIME, td(on), (µs)
TURN-ON DELAY TIME VS.
COLLECTOR CURRENT
(TYPICAL)
104
103
102
0 252010 155
GATE RESISTANCE, RG, (Ω)
SWITCHING TIME, toff, (µs)
TURN-OFF TIME VS.
GATE RESISTANCE
(TYPICAL)
VCC = 300V
VGE = ±15V
IC = 600A
Tj = 25°C
Tj = 125°C
104
103
102
0 252010 155
GATE RESISTANCE, RG, (Ω)
SWITCHING TIME, ton, (µs)
TURN-ON TIME VS.
GATE RESISTANCE
(TYPICAL)
VCC = 300V
VGE = ±15V
IC = 600A
Tj = 25°C
Tj = 125°C
104
103
102
0 700400 600500300200100
COLLECTOR CURRENT, IC, (AMPERES)
86420 1210
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
0
200
1000
600
400
800
Tj = 25°C
Tj = 125°C
Tj = -40°C
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING TIME, toff, (µs)
TURN-OFF TIME VS.
COLLECTOR CURRENT
(TYPICAL)
0 700400 600500300200100
0 700400 600500300200100
0 700400 600500300200100
Tj = 25°C
Tj = 125°C
0 700400 600500300200100 0 700400 600500300200100
VCC = 300V
VGE = ±15V
RG = 5.1Ω
Tj = 25°C
Tj = 125°C
VCC = 300V
VGE = ±15V
RG = 5.1Ω
Tj = 25°C
Tj = 125°C
VCC = 300V
VGE = ±15V
RG = 5.1Ω
Tj = 25°C
Tj = 125°C
VCC = 300V
VGE = ±15V
RG = 5.1Ω
Tj = 25°C
Tj = 125°C
VCC = 300V
VGE = ±15V
RG = 5.1Ω
Tj = 25°C
Tj = 125°C
104
103
102
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING TIME, ton, (µs)
TURN-ON TIME VS.
COLLECTOR CURRENT
(TYPICAL)
VCE = 5V
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
MG600J2YS61A
Dual IGBTMOD™
Compact IGBT Series Module
600 Amperes/600 Volts
55/05
102
101
100
0 700400 600500200 300100 0 700400 600500200 300100
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING LOSS, Eoff, (mJ/PULSE)
SWITCHING LOSS (OFF) VS.
COLLECTOR CURRENT
(TYPICAL)
VCC = 300V
VGE = ±15V
RG = 5.1Ω
Tj = 25°C
Tj = 125°C
101
103
102
SWITCHING LOSS, Eoff, (mJ/PULSE)
SWITCHING LOSS (OFF) VS.
GATE RESISTANCE
(TYPICAL)
0 2515 20105
GATE RESISTANCE, RG, (Ω)
VCC = 300V
VGE = ±15V
RG = 5.1Ω
Tj = 25°C
Tj = 125°C
102
101
100
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING LOSS, Eon, (mJ/PULSE)
SWITCHING LOSS (ON) VS.
COLLECTOR CURRENT
(TYPICAL)
VCC = 300V
VGE = ±15V
RG = 5.1Ω
Tj = 25°C
Tj = 125°C
101
103
102
SWITCHING LOSS, Eon, (mJ/PULSE)
SWITCHING LOSS (ON) VS.
GATE RESISTANCE
(TYPICAL)
0 2515105
GATE RESISTANCE, RG, (Ω)
VCC = 300V
VGE = ±15V
RG = 5.1Ω
Tj = 25°C
Tj = 125°C
103
102
101
0 600400 500200 300100
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
REVERSE RECOVERY CURRENT
(TYPICAL)
VCC = 300V
VGE = ±15V
RG = 5.1Ω
Tj = 25°C
Tj = 125°C
104
103
102
0 252010 155
GATE RESISTANCE, RG, (Ω)
SWITCHING TIME, tr, (µs)
RISE TIME VS.
GATE RESISTANCE
(TYPICAL)
VCC = 300V
VGE = ±15V
IC = 600A
Tj = 25°C
Tj = 125°C
20
104
103
102
0 252010 155
GATE RESISTANCE, RG, (Ω)
SWITCHING TIME, td(off), (µs)
TURN-OFF DELAY TIME VS.
GATE RESISTANCE
(TYPICAL)
VCC = 300V
VGE = ±15V
IC = 600A
Tj = 25°C
Tj = 125°C
104
103
102
0 252010 155
GATE RESISTANCE, RG, (Ω)
SWITCHING TIME, td(on), (µs)
TURN-ON DELAY TIME VS.
GATE RESISTANCE
(TYPICAL)
VCC = 300V
VGE = ±15V
IC = 600A
Tj = 25°C
Tj = 125°C
104
103
102
0 252010 155
GATE RESISTANCE, RG, (Ω)
SWITCHING TIME, tf, (µs)
FALL TIME VS.
GATE RESISTANCE
(TYPICAL)
VCC = 300V
VGE = ±15V
IC = 600A
Tj = 25°C
Tj = 125°C
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
MG600J2YS61A
Dual IGBTMOD™
Compact IGBT Series Module
600 Amperes/600 Volts
6 5/05
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IiC, (AMPERES)
0 100 300 400200 600500 700
REVERSE BIAS
SAFE OPERATION AREA
(TYPICAL)
104
103
101
100
102
VGE = ±15V
RG = 5.1Ω
Tj ≤ 125°C
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
GATE-EMITTER VOLTAGE VS.
GATE CHARGE
(TYPICAL)
0
4
8
12
16
20
200V
100V
300V
VCE = 0V
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE CHARGE, QG, (nC)
COLLECTOR-EMITTER VOLTAGE VS.
GATE CHARGE
(TYPICAL)
0
100
200
300
400
500
0
GATE CHARGE, QG, (nC)
1000 600050004000300020000 1000 60005000400030002000
IC = 300A
RL = 0.5Ω
Tj = 25C
IC = 300A
RL = 0.5Ω
Tj = 25C
TIME, (s)
TRANSIENT IMPEDANCE, Rth(j-c)
10-3 10-2 10-1 100101
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
100
10-2
10-4
10-3
10-1
TIME, (s)
TRANSIENT IMPEDANCE, Rth(j-c)
10-3 10-2 10-1 100101
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
100
10-2
10-4
10-3
10-1
SINGLE PULSE
STANDARD VALUE = Rth(j-c)Q = 0.045°C/W
SINGLE PULSE
STANDARD VALUE = Rth(j-c)D = 0.068°C/W
TC = 25°C TC = 25°C
101
100
10-1
0 700400 600500200 300100
EMITTER CURRENT, IE, (AMPERES)EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY LOSS, Edsw, (mJ/PULSE)
REVERSE RECOVERY LOSS VS.
FORWARD CURRENT
(TYPICAL)
VCC = 300V
VGE = ±15V
RG = 5.1Ω
Tj = 25°C
Tj = 125°C
103
102
101
0 600400 500200 300100
REVERSE RECOVERY TIME, trr, (ns)
REVERSE RECOVERY TIME
(TYPICAL )
VCC = 300V
VGE = ±15V
RG = 5.1Ω
Tj = 25°C
Tj = 125°C
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE, Cies, Coes, Cres, (pF)
10-2 10-1 100101102
CAPACITANCE VS.
COLLECTOR-EMITTER VOLTAGE
(TYPICAL)
106
104
103
105
Cies
Coes
Cres
VGE = 0V
f = 1MHz
TC = 25°C
