A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 OC
NONE
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIM UNITS
Vb Ir = 100 µA0.5 1.5 V
tSS
F = 10 GHz RL = 27 KΩ BIAS = NONE
B.W. = 375 KHz
LOW FREQUENCY CUT OF F = 100 Hz -59 dBM
Vof = 10 GHz Pin = -40 dBM BIAS = NONE 5000 8000 µ
µµ
µV/µ
µµ
µW
RV800 6000 Ohms
Tsold t = 5.0 SEC. +230 OC
SILICON SCHOTTKY BARRIER DETECTOR DIODE
A2S263
DESCRIPTION:
The ASI A2S263 is a Silicon P-Type
Schottcky Barrier Zero Bias Detector
Diode Housed in a Hermetically
Sealed Glass Packag e.
MAXIMUM RATINGS
IC20 mA
VCE 2.5 V
PDISS 100 mW @ T C = 25 OC
TJ-60 OC to +125 OC
TSTG -60 OC to +125 OC
PACKAGE STYLE 01
CATHODE I NDICATED BY COLOR BAND
