matched dual Siliconix | OG n-channel JFETs = Ex'gmamsescurvs 8 Sx See Section 5 ou designed f UlteLe S esigne or eo8e @ Ultra-Low Noise y za Sn = 8 nVA/Hz at 10 Hz (Typical) ua = Differential Amplifiers Sn = 20VA/He at kis (pil) | P Minimum System Error and Calibration m= Cv 5 mV Offset Maximum NW CMRR > 100 dB 7? * oO TO-71 wud ABSOLUTE MAXIMUM RATINGS (25C) See Section 7 uu Gate-Drain or Gate-Source Voltage ..... Steen eee -40V Dy De i = Gate Current ................ seeeeeeeeeeeaes BOMA | . Pry . . G G. Device Dissipation (Each Side), Ta = 85C 2 Nh (Derate 2.0 mW/C)............---- veeeee. 250 mW 510 Os, 272 Total Device Dissipation, Ta = 85C 5 a 2 au (Derate 3.0 MW/C)...... 6... eee ee eee ... 375 mW a De uu Storage Temperature Range.............. -65 to +150C 07) Go v= D: oO Lead Temperature 1 > fe fol & G2 6o G (1/16" from case for 30 seconds) ........ wees 800C BOTTOM VIEW opr 8 NWN) (ALTERNATE) yd za *ELECTRICAL CHARACTERISTICS (25C unless otherwise noted) aun Characteristic Min Max Unit Test Conditions ui on uy Gate Reverse C ma PA | Vag = -30V, Vos =0 2 - 7 GSS jate Reverse Current "50 TA GS = -30 V, Vps ee wo 3 ; BVGss Gate-Source Breakdown Voltage -40 IG =-1 2A, Vpg =0 _4] Al YGSioff) Gate-Source Cutoff Voitage 0.7 4 Vv Vps =20V, 1p = 1nA _5) Ves Gate Source Voltage ~0.2 ~3.8 = A Voc = 20V, Ip = 200 uA 61F ]ig Gate Operating Current 100 - dG D X > _ -100 nA 128C 7 Ipss. Saturation Drain Current (Note 1) 0.5 75 mA | Vps=20V,Vgs=0 8 %s foes source Forward Transconductance 1000 4000 Vpg = 20V, Vgs=0 a Ci Source Forward T di = = 9 > ats Common jource Forward Transconductance 500 1000 umho VoG = 20V. tp = 200HA | 5s ayy 10] Y | 90s Common-Source Output Conductance 10 Vps = 20V, VGs =9 YY x Yos Common-Source Output Conductance 1 VoG = 20V, Ip = 200 nA 324 M Ciss Common-Source Input Capacitance 26 oF Vps = 20V. Veg = 0 =1MH2 13 C Crss Common-Source Reverse Transfer Capacitance 5 =) c pos Equivalent Short Circuit { 2N5515-19 30 nv t=10Hz 14] ]z, quivalent Short Circuit Input 2N5620-24 15 Viz | Yoo = 20. Ip = 200 na Noise Voltage NESTE D4 10 z f= 1 kHz a 2N5515,20| 2N5516,21 | 2N5517,22|/2N5518,23| 2N5519,24 . a Characteristic Unit Test Conditions Min | Max | Min | Max | Min] Max [Min | Max | Min| Max 15 lig1-Ig2! Caaterential Gate 10 10 10 10 10 | na TOS soG a, 128C 'pss1 Saturation Drain 16 Ipsso Current Ratio 0.95 1 10.95 1 10.95 1 10.95 1} 0.90] 1 - Vps = 20 V, Vgs =0 _| Dss2 {Notes 1 and 2} Differential Gate- 1 M Ngs1-VGsz! Source Voltage 5 5 10 15 15 | mv , A Ta= 25C T | Alvgsi-Vggg! Gate-Source Voltage 5 10 20 40 80 . Tg = 125C 18 | C |~-_ Differential Drift uvIC Th = BSC 4 ar (Note 3) 5 10 20 40 80 VDG = 20, | TAS ee IN ip = 20044 | 7B 19] | loost-gos2!_ Differential Output 0.1 0.1 0.1 oA 0.1 |umho f=1kHz Ofs1 T ductance 20 7 Ratio (Notes 1 and 2) /297; 140.97] 1] 0.95) 1 0.95) 1] 0.90) 1] . Common Mode Vop = 10 to 20 Vv, ii 2t CMRR Rejection Ratio 100 100 90 dB _ = (Note 4} tp = 200 pA = *JEDEC registered data. 3. Measured at end paints, Ta and Tp. NS 0 NOTES: AVpp \ 1. Pulse test required, pulsewidth = 300 ys, duty cycle < 3%. 4, CMRR = 2010919 {--____-~ ]. AVpp = OV. J 2 i 4iVe@s1-Vesal 7 . Assumes smaller value in numerator. 4 1979 Siliconix incorporated 3-37 GATE 1$ BACKBIDE CONTACT 3S AND D ARE SYMMETRICAL ALL DIMENSIONS IN INCHES Al PERFORMANCE CURVES (25C 9fs FORWARD TRANSCONDUCTANCE tp - DRAIN CURRENT (mA} Ip - DRAIN CURRENT (mA) 4 DIMENSIONS IN MILLIMETERS) Output Characteristics S & Ss = 9 10 20 30 40, 50 Vos - DRAIN-SOURCE VOLTAGE (VOLTS) Transfer Characteristics Vps = 20V Og 06 O4 O2 - - Vas ~ GATE -SOURCE VOLTAGE {VOLTS} Transconductance Characteristics Vos * 20 f= 1kHz ~6RC +25C + Vas - GATE-SOURCE VOLTAGE (VOLTS) n-channel JFET designed for = Low Noise Amplifiers s Single and Differential Amplifiers TYPE PACKAGE Dual TO-71 Single TO-72 Single TO-92 Single TO-92 Lead-form Dual Chip Single Chip unless otherwise noted) Output Characteristics Ves* v Ip - DRAIN CURRENT (mA) 0 10 20 30 40 50 Vps - DRAIN-SOQURCE VOLTAGE (VOLTS) Transfer Characteristics Vps = 20 Ip - DRAIN CURRENT (mA) Q -05 -1 -15 -2 -28 -3 -3.5 Vs - GATE-SOURCE VOLTAGE (VOLTS) Transconductance Characteristics & (mmhos) u Ofs FORWARD TRANSCONDUCTANCE 0 -~MH -1 -15 +2 3-35 Vg ~ GATE-SOURCE VOLTAGE (VOLTS} ps J Siliconix BENEFITS: Simplifies Amplifier Design Low Output Conductance e@ Low 1/f Noise PRINCIPAL DEVICES 2N5515-24 2N4867-9, 2N4867A-69A J230-32 J230-18 - 232-18 2N5518CHP-9CHP, 2N5523CHP-4CHP Ail of the above single devices Output Characteristics = 0.2 Ip DRAIN CURRENT (mA} 0 10 20 30 40 50 Vps - DRAIN-SOURCE VOLTAGE (VOLTS) Transfer Characteristics Ip - DRAIN CURRENT (mA) =) -2 -3 ~4 5 Vas GATE-SOURCE VOLTAGE (VOLTS) Transconductance Characteristics 8 =20\ =1 9fs FORWARD TRANSCONDUCTANCE (mmhos) 0 1 =2 4 +5 Vas - GATE-SOURCE VOLTAGE {VGLTS) 5-27 1979 Siliconix incorporated SN xMIiUosdI NS iconix PERFORMANCE CURVES (Cont'd) (25C unless otherwise noted) Saturation Drain Current and Forward Transconductance vs. Gate-Source Cutoff Voltage 5000 8 Gfs @ ID = 200 nA of Vag = Of=1kHz @ip=1 a & 8 S nN wa gs 8 (soy) FONVLINGNOISNY HL OH VMHOs 36 = @Ip= ipss SATURATION DRAIN CURRENT (mA} 9 QO -1 -2 -3 -4 5 -6 -7 -8 -9 -10 V@s (off) GATE-SOURCE CUTOFF VOLTAGE Drain Current & Transconductance vs Ambient Temperature 1.6 14 Vos = 20 V Vas =0 @ f= 1kHz 09 OB VALUE RELATIVE TO 26C o7 0.6 * Os -56 -16 25 6 105 T - TEMPERATURE (C) 145 Static Drain-Source ON Resistance vs Gate~Source Cutoff Voltage w Ip = 10028, 2 Vas = 0 < a g 4 > af uw 3 z z < a a I 8 0 -2.0 40 -6.0 ~8.0 -10 VGS{OFF) GATE-SOURCE CUTOFF VOLTAGE (VOLTS) Drain-Source ON Resistance vs Ambient Temperature 1.6 Ip = 100 pA 15. D Veg =0 314 $ 8 1.3 B12 o rod S = 1.0 5 a 09 oc 8 08 07 0.6 ~55 15 2 665 105 145 T TEMPERATURE (C) Common-Source Output Conductance vs Drain-Source Voltage 8 =0 =4 o Sos ~ OUTPUT ADMITTANCE (umhos) 5 0.1 o 5 0 5 20 25 Vos - DRAIN-SOURCE VOLTAGE (VOLTS) Common-Source Forward Transconductance vs Drain Current 10K Vps= f=1 Sts - FORWARD TRANSCONDUCTANCE (umbos} OT Ot 1.0 10 Ip DRAIN CURRENT (mA} Approximate Noise Figure vs Input Noise Voltage 1000 a ae 4 = 100 uw Qo < F 5 o > 2 10 2 t 1.0 0.01 01 1.0 10 NF NOISE FIGURE (dB) Leakage Currents vs Ambient Temperature 10 4 z & ke 2 G i ec >? oe T - TEMPERATURE (C) Common-Source Output Conductance vs Drain Current Gog GUTPUT ADMITTANCE (umhos} 0.4 Common-Source Capacitance 20 CAPACITANCE (pF) Equivalent Input Noise Voltage and Noise 1K 8 ny NOISE VOLTAGE (nv//Hz) 3s GATE CURRENT {nA} 4 +10 10 Ip DRAIN CURRENT (mA) vs Gate-Source Voltage f=t Cras =O -2 4 6 8 w Vs - GATE-~SOURCE VOLTAGE (VOLTS) Current vs Frequency (Zt //dINV) LNBYYND 3SION Nu f FREQUENCY {Hz) Gate Operating Current vs Drain-Gate Voltage Ig- 1 2 3 Vpg DRAIN-GATE VOLTAGE (VOLTS) 5-28 1979 Siticonix incorporated