Silizium-Differential-Fotodiode Silicon Differential Photodiode SFH 221 Wesentliche Merkmale Features * Speziell geeignet fur Anwendungen im Bereich von 400 nm bis 1100 nm * Hohe Fotoempfindlichkeit * Hermetisch dichte Metallbauform (ahnlich TO-5), geeignet bis 125 C * Doppeldiode von extrem hoher Gleichmaigkeit * Especially suitable for applications from 400 nm to 1100 nm * High photosensitivity * Hermetically sealed metal package (similar to TO-5), suitable up to 125 C * Double diode with extremely high homogeneousness Anwendungen Applications * * * * * * * * Nachlaufsteuerungen Kantenfuhrung Industrieelektronik Messen/Steuern/Regeln" Follow-up controls Edge drives Industrial electronics For control and drive circuits Typ Type Bestellnummer Ordering Code Gehause Package SFH 221 Q62702-P270 Lotspiee im 5.08-mm-Raster (2/10") solder tabs 5.08 mm (2/10") lead spacing 2001-02-22 1 SFH 221 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg - 40 ... + 125 C Lottemperatur (Lotstelle 2 mm vom Gehause entfernt bei Lotzeit t 3 s) Soldering temperature in 2 mm distance from case bottom (t 3 s) TS 230 C Sperrspannung Reverse voltage VR 10 V Isolationsspannung gegen Gehause Insulation voltage vs. package VIS 100 V Verlustleistung, TA = 25 C Total power dissipation Ptot 50 mW Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) fur jede Einzeldiode Characteristics (TA = 25 C, standard light A, T = 2856 K) per single diode Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Fotoempfindlichkeit, VR = 5 V Spectral sensitivity S 24 ( 15) nA/Ix Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity S max 900 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax 400 ... 1100 nm Bestrahlungsempfindliche Flache Radiant sensitive area A 1.54 mm2 0.7 x 2.2 mm Abmessung der bestrahlungsempfindlichen Flache L x B Dimensions of radiant sensitive area LxW Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface H 1.1 ... 1.6 mm Halbwinkel Half angle 55 Grad deg. 2001-02-22 2 SFH 221 Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) fur jede Einzeldiode Characteristics (TA = 25 C, standard light A, T = 2856 K) per single diode (cont'd) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Dunkelstrom, VR = 10 V Dark current IR 10 ( 100) nA Spektrale Fotoempfindlichkeit, = 850 nm Spectral sensitivity S 0.55 A/W Maximale Abweichung der Fotoempfindlichkeit vom Mittelwert Max. deviation of the system spectral sensitivity from the average S 5 % Quantenausbeute, = 850 nm Quantum yield 0.80 Electrons Photon Leerlaufspannung, Ev = 1000 Ix Open-circuit voltage VL 330 ( 280) mV Kurzschlustrom, Ev = 1000 Ix Short-circuit current IK 24 A Isolationsstrom, VIS = 100 V Insulation current IIS 0.1 ( 1) nA Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 1 k; VR = 5 V; = 850 nm; Ip = 25 A tr, tf 500 ns Durchlaspannung, IF = 40 mA, E = 0 Forward voltage VF 1.0 V Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance C0 25 pF Temperaturkoeffizient fur VL Temperature coefficient of VL TCV - 2.6 mV/K Temperaturkoeffizient fur IK Temperature coefficient of IK TCI 0.18 %/K Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 10 V, = 850 nm NEP 1.0 x 10-13 Nachweisgrenze, VR = 10 V, = 850 nm Detection limit D* 1.2 x 1012 2001-02-22 3 W -----------Hz cm x Hz -------------------------W SFH 221 Relative Spectral Sensitivity Srel = f () Photocurrent IP = f (Ev), VR = 5 V Open-Circuit-Voltage VL = f (Ev) Total Power Dissipation Ptot = f (TA) Dark Current IR = f (VR), E = 0 Capacitance C = f (VR), f = 1 MHz, E = 0 Dark Current IR = f (TA), VR = 1 V, E = 0 Directional Characteristics Srel = f () 2001-02-22 4 SFH 221 Mazeichnung Package Outlines 0.0 33 ) 0.0 26 3.4 (0.134) 3.0 (0.118) Anode A 14.5 (0.571) (0 0.8 1.0 (0 .03 .03 9) 1) 5.08 (0.200) spacing ) Anode B o0.45 (0.018) 5( Radiant sensitive area 2.0 (0.079) 5( 0.6 o9.5 (0.374) o9.0 (0.354) o8.3 (0.327) o8.0 (0.315) o6.0 (0.236) o5.8 (0.228) 0.8 Chip position Metal case Isolated cathode 12.5 (0.492) 0.3 (0.012) max 0.09 (0.004) Diode system Radiant sensitive area 2.0 (0.079) x 1.67 (0.066) each GMOY6639 Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg (c) All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2001-02-22 5 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Osram Opto Semiconductor: SFH 221