SFH 221
Silizium-Differential-Fotodiode
Silicon Differential Photodiode
2001-02-22 1
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
von 400 nm bis 1100 nm
• Hohe Fotoempfindlichkeit
• Hermetisch dichte Metallbauform (ähnlich
TO-5), geeignet bis 125 °C
• Doppeldiode von extrem hoher
Gleichmäβigkeit
Anwendungen
• Nachlaufsteuerungen
• Kantenführung
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type Bestellnummer
Ordering Code Gehäuse
Package
SFH 221 Q62702-P270 Lötspieβe im 5.08-mm-Raster (2/10”)
solder tabs 5.08 mm (2/10”) lead spacing
Features
•Especially suitable for applications from
400 nm to 1100 nm
•High photosensitivity
•Hermetically sealed metal package (similar to
TO-5), suitable up to 125 °C
•Double diode with extremely high
homogeneousness
Applications
•Follow-up controls
•Edge drives
•Industrial electronics
•For control and drive circuits
2001-02-22 2
SFH 221
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg –40 …+ 125 °C
Löttemperatur (Lötstelle 2 mm vom Gehäuse
entfernt bei Lötzeit t ≤ 3s)
Soldering temperature in 2 mm distan ce from case
bottom (t ≤ 3s)
TS230 °C
Sperrspannung
Reverse voltage VR10 V
Isolationsspannung gegen Gehäuse
Insulation voltage vs. package VIS 100 V
Verlustleistung, TA = 25 °C
Total power dissipation Ptot 50 mW
Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K) für jede Einzeldiode
Characteristics (TA = 25 °C, standard light A, T = 2856 K) per single diode
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Fotoempfindlichkeit, VR = 5 V
Spectral sensitivity S24 (≥ 15) nA/Ix
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λS max 900 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectral range of sensitivity
S = 10% of Smax
λ400 …1100 nm
Bestrahlungsempfindl iche Fläche
Radiant sensitive area A1.54 mm2
Abmessung der bestrahlungsempfindlichen Fläche
Dimensions of radiant sensitive area L × B
L × W0.7 ×2.2 mm
Abstand Chipoberfläche zu Gehäuseoberfläche
Distance chip front to case surface H1.1 …1.6 mm
Halbwinkel
Half angle ϕ±55 Grad
deg.
SFH 221
2001-02-22 3
Dunkelstrom, VR = 10 V
Dark current IR10 (≤ 100) nA
Spektrale Fotoempfindlichke it, λ = 850 nm
Spectral sensitivity Sλ0.55 A/W
Maximale Abweichung der Fotoempfindlichkeit
vom Mittelwert
Max. deviation of the system spectral sensitivity
from the average
∆S±5%
Quantenausbeute, λ = 850 nm
Quantum yield η0.80 Electrons
Photon
Leerlaufspannung, Ev = 1000 Ix
Open-circuit voltage VL330 (≥ 280) mV
Kurzschluβstrom, Ev = 1000 Ix
Short-circuit current IK24 µA
Isolationsstrom, VIS = 100 V
Insulation current IIS 0.1 (≤ 1) nA
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
RL = 1 kΩ; VR = 5 V; λ = 850 nm; Ip = 25 µA
tr, tf500 ns
Durchlaβspannung, IF = 40 mA, E = 0
Forward voltage VF1.0 V
Kapazität, VR = 0 V, f = 1 MHz, E = 0
Capacitance C025 pF
Temperaturkoeffizient für VL
Temperature coefficient of VL
TCV–2.6 mV/K
Temperaturkoeffizient für IK
Temperature coefficient of IK
TCI0.18 %/K
Rauschäquivalente Strahlungsleistung
Noise equivalent power
VR = 10 V, λ = 850 nm
NEP 1.0 ×10–13
Nachweisgrenze, VR = 10 V, λ = 850 nm
Detection limit D* 1.2 ×1012
Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K) für jede Einzeldiode
Characteristics (TA = 25 °C, standard light A, T = 2856 K) per single diode (cont’d)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
W
Hz
------------
cm Hz×
W
--------------------------
SFH 221
2001-02-22 4
Relati ve Sp ectral Sensi ti vi t y
Srel = f (λ)
Dark Current
IR = f (VR), E = 0
Directional Cha ra cter i sti cs
Srel = f (ϕ)
Photocurrent IP = f (Ev), VR = 5 V
Open-Circuit-Voltage VL = f (Ev)
Capacitance
C = f (VR), f = 1 MHz, E = 0
Total Pow er Di ssip ation
Ptot = f (TA)
Dark Current
IR = f (TA), VR = 1 V, E = 0
SFH 221
2001-02-22 5
Maßzeichnung
Package Outlines
Maße werden wi e fo lgt angegeben: m m (inc h) / D im ensions are specified as follows: mm (inch).
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The inform at ion describes the type of component and sha ll not be considered as assured char ac te ris tics .
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recyc ling operat ors known t o you. We can also help y ou – get in touch wit h your near est sales offic e.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain
and sust ain human life. If th ey fail , it is rea so nable to assum e th at the health of the user may be endange red.
2.0 (0.079)
Chip position
3.4 (0.134)
3.0 (0.118)
0.3 (0.012) max
14.5 (0.571)
12.5 (0.492)
ø6.0 (0.236)
ø5.8 (0.228)
ø8.3 (0.327)
ø8.0 (0.315)
ø0.45 (0.018)
5.08 (0.200)
spacing
Anode B
Isolated cathode
Anode A Metal case
GMOY6639
Radiant sensitive area
ø9.5 (0.374)
ø9.0 (0.354)
0.09 (0.004)
Radiant sensitive area
Diode system
2.0 (0.079) x 1.67 (0.066) each
0.85 (0.033)
0.65 (0.026)
1.0 (0.039)
0.8 (0.031)
