AP0503GMA Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 similar area footprint and pin assignment BVDSS 30V Low Gate Drive Voltage RDS(ON) 4.2m D Lower On-resistance ID 75A RoHS Compliant G D S Description The APAK-5 package is preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. SS S G APAK-5 Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 12 V ID@TC=25 Continuous Drain Current, VGS @ 4.5V 75 A ID@TC=100 Continuous Drain Current, VGS @ 4.5V 56 A 1 IDM Pulsed Drain Current 300 A PD@TC=25 Total Power Dissipation 70 W 0.6 W/ Linear Derating Factor 4 EAS Single Pulse Avalanche Energy 29 mJ IAR Avalanche Current 24 A TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Data & specifications subject to change without notice 3 Value Units Max. 1.8 /W Max. 85 /W 200429052-1/4 AP0503GMA Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 30 - - V BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA - 0.018 - V/ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=30A - - 4.2 m VGS=4.5V, ID=30A - - 6 m VGS=2.5V, ID=20A - - 9 m 0.5 - 1.2 V VDS=5V, ID=30A - 88 - S VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=150 C) VDS=24V, VGS=0V - - 25 uA Gate-Source Leakage VGS=12V - - 100 nA ID=30A - 52 83 nC VGS(th) Gate Threshold Voltage gfs Forward Transconductance VDS=VGS, ID=250uA o IDSS Drain-Source Leakage Current (Tj=25 C) o IGSS VGS=0V, ID=250uA 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=24V - 8 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 21 - nC VDS=15V - 19 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=30A - 83 - ns td(off) Turn-off Delay Time RG=3.3,VGS=5V - 60 - ns tf Fall Time RD=0.5 - 115 - ns Ciss Input Capacitance VGS=0V - 5130 8200 pF Coss Output Capacitance VDS=25V - 620 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 360 - pF Rg Gate Resistance f=1.0MHz - 0.85 1.3 Min. Typ. IS=45A, VGS=0V - - 1.3 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=30A, VGS=0V, - 38 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 30 - nC Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on FR4 board. 4.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25 2/4 AP0503GMA 150 150 o 5.0V 4.5V 3.5V 2.5V T C = 1 50 o C ID , Drain Current (A) ID , Drain Current (A) T C =25 C 100 50 5.0 V 4.5 V 3.5 V 100 2.5V 50 V G = 1.5 V V G =1.5V 0 0 0 1 2 3 4 5 0 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 16 1.7 I D = 20 A T c =25 I D =30A V G =4.5V RDS(ON) (m) Normalized RDS(ON) 12 8 4 1.3 0.9 0.5 0 2 4 6 8 10 -50 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 6 2.0 Normalized VGS(th) (V) 1.5 4 Is (A) T j =150 o C T j =25 o C 2 1.0 0.5 0.0 0 0 0.2 0.4 0.6 0.8 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP0503GMA f=1.0MHz 15 10000 I D =30A C iss V DS =15V V DS =20V V DS =24V 9 C (pF) VGS , Gate to Source Voltage (V) 12 1000 C oss 6 C rss 3 100 0 0 30 60 90 120 1 150 6 11 16 21 26 31 V DS ,Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 Normalized Thermal Response (Rthjc) 1 ID (A) 100 1ms 10 T c =25 o C Single Pulse 10ms 100ms DC 1 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 1 10 100 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 100 VG V DS =5V ID , Drain Current (A) 80 QG o o T j =25 C 60 T j =150 C 4.5V QGS QGD 40 20 Charge Q 0 0 1 2 3 4 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4/4