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FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2
FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT
u
FGA25N120ANTD/FGA25N120ANTD_F109
1200V NPT Trench IGBT
Features
• NPT Trench Technology, Positive temperature coefficient
• Low saturation voltage: VCE(sat), typ = 2.0V
@ IC = 25A and TC = 25°C
• Low switching loss: Eoff, ty p = 0.96mJ
@ IC = 25A and TC = 25°C
• Extremely enhanced avalanche capability
Description
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1200V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation.
This device is well suited for the resonant or soft switching appli-
cation such as induction heating, microwave oven, etc.
G
C
E
G
C
E
GCE
TO-3PN
Absolute Maximum Ratings
Symbol Description FGA25N120ANTD Units
V
CES
Collector-Emitter Voltage 1200 V
V
GES
Gate-Emitter Voltage ± 20 V
I
C
Collector Current @ T
C
= 25°C50 A
Collector Current @ T
C
= 100°C25 A
I
CM
Pulsed Collector Current (Note 1) 90 A
I
F
Diode Continuous Forward Current @ T
C
= 100°C25 A
I
FM
Diode Maximum Forward Current 150 A
P
D
Maximum Power Dissipation @ T
C
= 25°C312 W
Maximum Power Dissipation @ T
C
= 100°C125 W
T
J
Operating Junction Temperature -55 to +150 °C
T
stg
Storage Temperature Range -55 to +150 °C
T
L
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300 °C
Thermal Characteristics
Symbol Parameter Typ. Max. Units
R
θJC
Thermal Resistance, Junction-to-Case for IGBT -- 0.4 °C/W
R
θJC
Thermal Resistance, Junction-to-Case for Diode -- 2.0 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient -- 40 °C/W
tm
July, 2007
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FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2
FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FGA25N120ANTD FGA25N120ANTD TO-3P -- -- 30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 3mA
IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 250 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 25mA, VCE = VGE 3.5 5.5 7.5 V
VCE(sat) Collector to Emitter
Saturation Voltage IC = 25A, VGE = 15V -- 2.0 2.5 V
IC = 25A, VGE = 15V,
TC = 125°C-- 2.15 -- V
IC = 50A, VGE = 15V -- 2.65 -- V
Dynamic Characteristics
Cies Input Capacitance VCE = 30V, VGE = 0V,
f = 1MHz
-- 3700 -- pF
Coes Output Capacitance -- 130 -- pF
Cres Reverse Transfer Capacitance -- 80 -- pF
Switching Characteristics
td(on) Turn-On Delay Time VCC = 600 V, IC = 25A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25°C
-- 50 -- ns
trRise Time -- 60 90 ns
td(off) Turn-Off Delay Time -- 190 -- ns
tfFall Time -- 100 180 ns
Eon Turn-On Switching Loss -- 4.1 6.2 mJ
Eoff Turn-Off Switching Loss -- 0.96 1.5 mJ
Ets Total Switching Loss -- 5.06 7.7 mJ
td(on) Turn-On Delay Time VCC = 600 V, IC = 25A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 125°C
-- 50 -- ns
trRise Time -- 60 -- ns
td(off) Tu rn-Off Delay Time -- 200 -- ns
tfFall Time -- 154 -- ns
Eon Turn-On Switching Loss -- 4.3 6.9 mJ
Eoff Turn-Off Switching Loss -- 1.5 2.4 mJ
Ets Total Switching Loss -- 5.8 9.3 mJ
QgTotal Gate Charge VCE = 600 V, IC = 25A,
VGE = 15V -- 200 300 nC
Qge Gate-Emitter Charge -- 15 23 nC
Qgc Gate-Collector Charge -- 100 150 nC
Notes:
(1) Repetitive rating : Pulse width limited by max. junction temperature
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FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2
FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT
Electrical Characteristics of DIODE TC = 25°C unle ss otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
VFM Diode Forward Voltage IF = 25A TC = 25°C-- 2.0 3.0 V
TC = 125°C-- 2.1 --
trr Diode Reverse Recovery Time IF = 25A
dI/dt = 200 A/µs TC = 25°C-- 235 350 ns
TC = 125°C-- 300 --
Irr Diode Peak Reverse Reco ver y Cur-
rent TC = 25°C-- 27 40 A
TC = 125°C-- 31 --
Qrr Diode Reverse Recovery Charge TC = 25°C-- 3130 4700 nC
TC = 125°C-- 4650 --
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FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2
FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Saturation Voltage
012345
0
20
40
60
80
100
120 Common Emitter
VGE = 15V
TC = 25°C
TC = 125°C
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
0246810
0
20
40
60
80
100
120
140
160
180
10V
9V
8V
7V
20V
17V 15V 12V
V
GE
= 6V
T
C
= 25°C
Collector Current, I
C
[A]
Collector-Emitter Voltage, V
CE
[V]
Characteristics
Figure 3. Saturation Voltage vs. Case Figure 4. Saturation Voltage vs. V
GE
Temperature at Variant Current Level
25 50 75 100 125
1.5
2.0
2.5
3.0
Common Emitter
V
GE
= 15V
40A
I
C
= 25A
Collector-Emitter Voltage, V
CE
[V]
Case Tem p er ature, T
C
[
°
C]
0 4 8 12 16 20
0
4
8
12
16
20
40A
25A
Common Emitter
T
C
= -40°C
I
C
= 12.5A
Collector-Emitter Voltage, V
CE
[V]
Gate-Em itter Vol ta ge, V
GE
[V]
Figure 5. Saturation Voltage vs. V
GE
0 4 8 12 16 20
0
4
8
12
16
20
40A
25A
Common Emitter
T
C
= 125°C
I
C
= 12.5A
Collector-Emitter Voltage, V
CE
[V]
Gate-Em itter Vol ta ge, V
GE
[V]
0 4 8 12 16 20
0
4
8
12
16
20
40A
25A
Common Emitter
T
C
= 25°C
I
C
= 12.5A
Collector-Emitter Voltage, V
CE
[V]
Gate-Em itter Vol ta ge, V
GE
[V]
Figure 6. Saturation Voltage vs. V
GE
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FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2
FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT
Typical Performance Characteristics (Continued)
Figure 7. Capacitance Characteristics Figure 8. Turn-On Characteristics vs. Gate
Resistance
0 10203040506070
10
100
Common Emitter
VCC = 600V, VGE = ±15V
IC = 25A
TC = 25°C
TC = 125°C
td(on)
tr
Switching Time [ns]
Gate Resistance, RG [Ω]
110
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
Ciss
Coss
Common Em i t t er
VGE = 0V, f = 1MHz
TC = 25°C
Crss
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
Figure 9. Turn-Off Characteristics vs. Figure 10. Switching Loss vs. Gate Resistance
Gate Resistance
0 10203040506070
1
10
Common Emitter
VCC = 600V, VGE =
±
15V
IC = 25A
TC = 25
°
C
TC = 125
°
C
Eon
Eoff
Switching Loss [mJ]
Gate Resistance, R
G
[Ω]
0 10203040506070
10
100
1000
Common Emit t er
V
CC
= 600V, V
GE
=
±
15V
I
C
= 25A
T
C
= 25
°
C
T
C
= 125
°
C
td(off)
tf
Switching Time [ns]
Gate Resistance, R
G
[
Ω
]
Figure 11. Turn-On Characteristics vs. Figure 12. Turn-Off Characteristics vs.
Collector Current Collector Current
10 20 30 40 50
100
Common Emitter
V
GE
= ±15V, R
G
= 10Ω
T
C
= 25°C
T
C
= 125°C tr
td(on)
Switching Time [ns]
Collector Curr ent, I
C
[A]
10 20 30 40 50
100
Common Emitter
V
GE
= ±15V, R
G
= 10Ω
T
C
= 25°C
T
C
= 125°C
td(off)
tf
Switching Time [ns]
Collector Current, I
C
[A]
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FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2
FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT
Typical Performance Characteristics (Continued)
Figure 13. Switching Loss vs. Collector Current Figure 14. Gate Charge Characteristics
10 20 30 40 50
0.1
1
10
Common Emit ter
V
GE
=
±
15V, R
G
= 10
Ω
T
C
= 25
°
C
TC = 125
°
C
Eon
Eoff
Switching Loss [mJ]
Collector Cu r rent, I
C
[A]
0 20 40 60 80 100 120 140 160 180 200
0
2
4
6
8
10
12
14
16
600V
400V
Common Emitter
R
L
= 24
Ω
T
C
= 25
°
C
Vcc = 200V
Gate-Emitter Voltage, V
GE
[V]
Gate Charge, Q
g
[nC]
Figure 15. SOA Characteristics Figure 16. Turn-Off SOA
1 10 100 1000
1
10
100
Safe Operating Area
V
GE
= 15V, T
C
= 125°C
Collector Current, I
C
[A]
Collector-Emitter Voltage, V
CE
[V]
0.1 1 10 100 1000
0.01
0.1
1
10
100
50
µ
s
100
µ
s
1ms
DC Operation
Ic MAX (Pulsed)
Ic MAX (Continuous)
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
Collector Current, Ic [A]
Collector - Emitter Voltage, V
CE
[V]
Figure 17. Transient Thermal Impedance of IGBT
1
E
-
5
1
E
-
4
1
E
-
3
0
.
0
1
0
.
1
1
1
0
1
E
-
3
0
.
0
1
0
.
11
1
0
0.1
0.5
0.2
0.05
0.02
0.01 single pulse
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
[
Z
t
h
j
c
]
R
e
c
t
a
n
g
u
l
a
r
P
u
l
s
e
D
u
r
a
t
i
o
n
[
s
e
c
]
Pdm
t1
t2
Duty fa c to r D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
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FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2
FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT
Typical Performance Characteristics (Continued)
Figure 18. Forward Characteristics Figure 19. Reverse Recovery Current
0.1
1
10
50
0.0 0.4 0.8 1.2 1.6 2.0
TC = 125°C
TC = 25°C
TJ = 25°
C
T
J
= 125
°
C
Forward Volt age , V
F
[V]
Forward Current , I
F
[A]
510152025
0
5
10
15
20
25
30
di/dt = 100A/
µ
s
di/dt = 200A/
µ
s
Reverse Recovery Currnet , Irr [A]
Forward Current , I F [A]
Figure 20. Stored Charge Figure 21. Reverse Recovery Time
5 10152025
0
100
200
300
di/dt = 100A/
µ
s
di/dt = 200A/
µ
s
Reverse Recovery Time , trr [ns]
Forward Current , IF [A]
5 10152025
0
1000
2000
3000
4000
di/dt = 100A/
µ
s
di/dt = 200A/
µ
s
Stored Recovery Charge , Qrr [nC]
Forward Current , IF [A]
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FGA25N120ANTD /FGA25N!20ANTD_F109 Rev. B2
FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT
Mechanical Dimensions (continued)
TO-3PN
Dimensions in Millimeters
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PRODUCT STATUS DEFINITIONS
Definition of Terms
ACEx™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FAST®
FASTr™
FPS™
FRFET™
FACT Quiet Series™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
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ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench®
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
ScalarPump™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
TinyBoost™
TinyBuck™
TinyPWM™
TinyPower™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC™
UniFET™
UltraFET®
VCX™
Wire™
Across the board. Around the world.™
The Power Franchise®
Programmable Active Droop™
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20
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