© Semiconductor Components Industries, LLC, 2003
October, 2016 − Rev. 7 1Publication Order Number:
MMBT6521LT1/D
MMBT6521LT1G,
SMMBT6521LT1G
Amplifier Transistor
NPN Silicon
Features
•S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 25 Vdc
Collector−Base Voltage VCBO 40 Vdc
Emitter−Base Voltage VEBO 4.0 Vdc
Collector Current — Continuous IC100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1) @TA = 25°C
Derate above 25°C
PD225
1.8 mW
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) @TA = 25°C
Derate above 25°C
PD300
2.4 mW
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
SOT−23 (TO−236)
CASE 318−08
STYLE 6
COLLECTOR
3
1
BASE
2
EMITTER
Device Package Shipping†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
SOT−23
(Pb−Free) 3,000 /
Tape & Reel
MMBT6521LT1G
1
RO M G
G
RO = Specific Device Code
M = Date Code*
G= Pb−Free Package
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
MARKING DIAGRAM
SOT−23
(Pb−Free) 3,000 /
Tape & Reel
SMMBT6521LT1G
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MMBT6521LT1G, SMMBT6521LT1G
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = 0.5 mAdc, IB = 0) V(BR)CEO 25 − Vdc
Emitter−Base Breakdown V oltage
(IE = 10 mAdc, IC = 0) V(BR)EBO 4.0 − Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0) ICBO − 0.5 mAdc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0) IEBO − 10 nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 10 Vdc)
(IC = 2.0 mAdc, VCE = 10 Vdc)
hFE 150
300 −
600
−
Collector−Emitter Saturation Voltage
(IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) − 0.5 Vdc
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo − 3.5 pF
Noise Figure
(IC = 10 mAdc, VCE = 5.0 Vdc, Power Bandwidth = 15.7 kHz,
3.0 dB points @ = 10 Hz and 10 kHz)
NF − 3.0 dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
RSin
enIDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
Figure 2. Turn−On Time Figure 3. Turn−Off Time
EQUIVALENT SWITCHING TIME TEST CIRCUITS
*Total shunt capacitance of test jig and connectors
10 k
+3.0 V
275
CS < 4.0 pF*
10 k
+3.0 V
275
CS < 4.0 pF*
1N916
300 ns
DUTY CYCLE = 2% +10.9 V
-0.5 V
<1.0 ns
10 < t1 < 500 ms
DUTY CYCLE = 2% +10.9 V
0
-9.1 V < 1.0 ns
t1
MMBT6521LT1G, SMMBT6521LT1G
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3
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
Figure 4. Noise Voltage
f, FREQUENCY (Hz)
5.0
7.0
10
20
3.0
Figure 5. Noise Current
f, FREQUENCY (Hz)
2.0
10 20 50 100 200 500 1k 2k 5k 10k
100
50
20
10
5.0
2.0
1.0
0.5
0.2
0.1
BANDWIDTH = 1.0 Hz
RS = 0
IC = 1.0 mA
100 mA
en, NOISE VOLTAGE (nV)
In, NOISE CURRENT (pA)
30 mA
BANDWIDTH = 1.0 Hz
RS ≈∞
10 mA
300 mA
IC = 1.0 mA
300 mA
100 mA
30 mA
10 mA
10 20 50 100 200 500 1k 2k 5k 10k
NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25°C)
Figure 6. Narrow Band, 100 Hz
IC, COLLECTOR CURRENT (mA)
500k
Figure 7. Narrow Band, 1.0 kHz
IC, COLLECTOR CURRENT (mA)
10
2.0 dB
BANDWIDTH = 1.0 Hz
RS, SOURCE RESISTANCE (OHMS)
RS, SOURCE RESISTANCE (OHMS)
Figure 8. Wideband
IC, COLLECTOR CURRENT (mA)
10
10 Hz to 15.7 kHz
RS, SOURCE RESISTANCE (OHMS)
Noise Figure is defined as:
NF +20 log10 ǒen2)4KTRS)In2RS2
4KTRSǓ1ń2
= Noise V oltage of the Transistor referred to the input. (Figure 3)
= Noise Current of the T ransistor referred to the input. (Figure 4)
= Boltzman’s Constant (1.38 x 10−23 j/°K)
= Temperature of the Source Resistance (°K)
= Source Resistance (Ohms)
en
In
K
T
RS
3.0 dB 4.0 dB
6.0 dB 10 dB
50
100
200
500
1k
10k
5k
20k
50k
100k
200k
2k
20 30 50 70 100 200 300 500 700 1k 10 20 30 50 70 100 200 300 500 700 1k
500k
100
200
500
1k
10k
5k
20k
50k
100k
200k
2k
1M
500k
50
100
200
500
1k
10k
5k
20k
50k
100k
200k
2k
20 30 50 70 100 200 300 500 700 1k
BANDWIDTH = 1.0 Hz
1.0 dB
2.0 dB 3.0 dB
5.0 dB
8.0 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
MMBT6521LT1G, SMMBT6521LT1G
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4
TYPICAL STATIC CHARACTERISTICS
Figure 9. DC Current Gain
IC, COLLECTOR CURRENT (mA)
400
0.004
h , DC CURRENT GAIN
FE
TJ = 125°C
-55°C
25°C
VCE = 1.0 V
VCE = 10 V
Figure 10. Collector Saturation Region
IC, COLLECTOR CURRENT (mA)
1.4
Figure 11. Collector Characteristics
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20 50
1.6
100
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1.0 V
*qVC for VCE(sat)
qVB for VBE
0.1 0.2 0.5
Figure 12. “On” Voltages
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.002
TJ = 25°C
IC = 1.0 mA 10 mA 100 mA
Figure 13. Temperature Coefficients
50 mA
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
40
60
80
100
20
0
0
IC, COLLECTOR CURRENT (mA)
TA = 25°C
PULSE WIDTH = 300 ms
DUTY CYCLE ≤ 2.0%
IB = 500 mA
400 mA
300 mA
200 mA
100 mA
*APPLIES for IC/IB ≤ hFE/2
25°C to 125°C
-55°C to 25°C
25°C to 125°C
-55°C to 25°C
40
60
0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 5.0 10 15 20 25 30 35 40
1.2
1.0
0.8
0.6
0.4
0.2
0-2.4
0.8
0
-1.6
-0.8
1.0 2.0 5.0 10 20 50 100
0.1 0.2 0.5
200
100
80
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
MMBT6521LT1G, SMMBT6521LT1G
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5
TYPICAL DYNAMIC CHARACTERISTICS
C, CAPACITANCE (pF)
Figure 14. Turn−On Time
IC, COLLECTOR CURRENT (mA)
300
Figure 15. Turn−Off Time
IC, COLLECTOR CURRENT (mA)
2.0 5.0 10 20 30 50
1000
Figure 16. Current−Gain — Bandwidth Product
IC, COLLECTOR CURRENT (mA)
Figure 17. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
Figure 18. Input Impedance
IC, COLLECTOR CURRENT (mA)
Figure 19. Output Admittance
IC, COLLECTOR CURRENT (mA)
3.01.0
500
0.5
10
t, TIME (ns)
t, TIME (ns)
f, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
T
h , OUTPUT ADMITTANCE ( mhos)
oe m
hie, INPUT IMPEDANCE (k )Ω
3.0
5.0
7.0
10
20
30
50
70
100
200
7.0 70 100
VCC = 3.0 V
IC/IB = 10
TJ = 25°C
td @ VBE(off) = 0.5 Vdc
tr
10
20
30
50
70
100
200
300
500
700
2.0 5.0 10 20 30 50
3.01.0 7.0 70 100
VCC = 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
ts
tf
50
70
100
200
300
0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
TJ = 25°C
f = 100 MHz
VCE = 20 V
5.0 V
1.0
2.0
3.0
5.0
7.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 500.05
TJ = 25°C
f = 1.0 MHz
Cib
Cob
2.0 5.0 10 20 50
1.0
0.2
100
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
0.1 0.2 0.5
hfe ≈ 200 @ IC = 1.0 mA
VCE = 10 Vdc
f = 1.0 kHz
TA = 25°C
2.0 5.0 10 20 50
1.0
2.0
100
3.0
5.0
7.0
10
20
30
50
70
100
200
0.1 0.2 0.5
VCE = 10 Vdc
f = 1.0 kHz
TA = 25°C
hfe ≈ 200 @ IC = 1.0 mA
MMBT6521LT1G, SMMBT6521LT1G
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6
Figure 20. Thermal Response
t, TIME (ms)
1.0
0.01
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k
D = 0.5
0.2
0.1
0.05
0.02
0.01 SINGLE PULSE
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN−569)
ZqJA(t) = r(t) RqJA
TJ(pk) − TA = P(pk) ZqJA(t)
t1
t2
P(pk)
FIGURE 21
Figure 21.
TJ, JUNCTION TEMPERATURE (°C)
104
-4
0
IC, COLLECTOR CURRENT (nA)
Figure 22.
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
400
2.0
IC, COLLECTOR CURRENT (mA)
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by
the model as shown in Figure 21. Using the model and the de-
vice thermal response the normalized effective transient ther-
mal resistance of Figure 20 was calculated for various duty
cycles.
T o find ZqJA(t), multiply the value obtained from Figure 20
by the steady state value RqJA.
Example:
The MPS6521 is dissipating 2.0 watts peak under the follow-
ing conditions:
t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)
Using Figure 20 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
The peak rise in junction temperature is therefore
DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see ON Semiconductor Application
Note AN569/D, available from the Literature Distribution
Center or on our website at www.onsemi.com.
The safe operating area curves indicate IC−VCE limits o f
the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 22 is based upon TJ(pk) = 150°C; TC or
TA is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk)
may be calculated from the data in Figure 20. At high case or
ambient temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
10-2
10-1
100
101
102
103
-2
0
0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160
VCC = 30 Vdc
ICEO
ICBO
AND
ICEX @ VBE(off) = 3.0 Vdc
TA = 25°C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1.0 ms
10 ms
TC = 25°C1.0 s
dc
dc
4.0
6.0
10
20
40
60
100
200
4.0 6.0 8.0 10 20 40
TJ = 150°C
100 ms
MMBT6521LT1G, SMMBT6521LT1G
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7
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE0.35 0.54 0.69 0.014 0.021 0.027
c0 −−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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