MMBT6521LT1G, SMMBT6521LT1G Amplifier Transistor NPN Silicon Features www.onsemi.com * S Prefix for Automotive and Other Applications Requiring Unique * Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant SOT- 23 (TO -236) CASE 318 -08 STYLE 6 MAXIMUM RATINGS Rating Symbol Value Unit Collector -Emitter Voltage VCEO 25 Vdc Collector -Base Voltage VCBO 40 Vdc Emitter -Base Voltage VEBO 4.0 Vdc IC 100 mAdc Collector Current -- Continuous COLLECTOR 3 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (Note 1) @TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) @TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Symbol Max Unit 225 1.8 mW mW/C 556 C/W 300 2.4 mW mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C MARKING DIAGRAM PD RqJA RO M G G PD Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR- 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 1 RO M G = Specific Device Code = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping MMBT6521LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel SMMBT6521LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2003 October, 2016 - Rev. 7 1 Publication Order Number: MMBT6521LT1/D MMBT6521LT1G, SMMBT6521LT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 25 - 4.0 - - 0.5 - 10 150 300 - 600 - 0.5 - 3.5 - 3.0 Unit OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = 0.5 mAdc, IB = 0) V(BR)CEO Emitter -Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO Vdc Vdc mAdc nAdc ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 10 Vdc) (IC = 2.0 mAdc, VCE = 10 Vdc) hFE Collector -Emitter Saturation Voltage (IC = 50 mAdc, IB = 5.0 mAdc) - VCE(sat) Vdc SMALL- SIGNAL CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo Noise Figure (IC = 10 mAdc, VCE = 5.0 Vdc, Power Bandwidth = 15.7 kHz, 3.0 dB points @ = 10 Hz and 10 kHz) pF NF dB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model EQUIVALENT SWITCHING TIME TEST CIRCUITS +3.0 V 300 ns DUTY CYCLE = 2% 275 +10.9 V +3.0 V 10 < t1 < 500 ms DUTY CYCLE = 2% t1 +10.9 V 10 k -0.5 V <1.0 ns 275 10 k 0 CS < 4.0 pF* -9.1 V < 1.0 ns 1N916 *Total shunt capacitance of test jig and connectors Figure 2. Turn-On Time Figure 3. Turn-Off Time www.onsemi.com 2 CS < 4.0 pF* MMBT6521LT1G, SMMBT6521LT1G TYPICAL NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25C) 20 100 BANDWIDTH = 1.0 Hz RS = 0 50 300 mA 10 In, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) IC = 1.0 mA 100 mA 7.0 5.0 10 mA 3.0 20 300 mA 100 mA 10 5.0 2.0 1.0 30 mA 0.5 30 mA BANDWIDTH = 1.0 Hz RS IC = 1.0 mA 10 mA 0.2 2.0 0.1 10 20 50 100 200 500 1k f, FREQUENCY (Hz) 2k 5k 10 10k 20 50 100 200 500 1k f, FREQUENCY (Hz) 2k 5k 10k Figure 5. Noise Current Figure 4. Noise Voltage NOISE FIGURE CONTOURS (VCE = 5.0 Vdc, TA = 25C) BANDWIDTH = 1.0 Hz 200k 100k 50k 20k 10k 5k 2.0 dB 2k 1k 500 3.0 dB 4.0 dB 6.0 dB 10 dB 200 100 50 RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) 500k 1M 500k BANDWIDTH = 1.0 Hz 200k 100k 50k 20k 10k 1.0 dB 5k 2.0 dB 2k 1k 500 5.0 dB 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1k 8.0 dB 10 20 500k 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1k Figure 7. Narrow Band, 1.0 kHz Figure 6. Narrow Band, 100 Hz RS , SOURCE RESISTANCE (OHMS) 3.0 dB 10 Hz to 15.7 kHz 200k 100k 50k Noise Figure is defined as: 20k NF + 20 log10 10k 5k 1.0 dB 2k 1k 500 en In K T RS 2.0 dB 3.0 dB 5.0 dB 200 100 50 20 30 50 70 100 200 300 500 700 1k IC, COLLECTOR CURRENT (mA) Figure 8. Wideband www.onsemi.com 3 en2 ) 4KTRS ) In 2RS2 12 4KTRS = Noise Voltage of the Transistor referred to the input. (Figure 3) = Noise Current of the Transistor referred to the input. (Figure 4) = Boltzman's Constant (1.38 x 10-23 j/K) = Temperature of the Source Resistance (K) = Source Resistance (Ohms) 8.0 dB 10 MMBT6521LT1G, SMMBT6521LT1G TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN 400 TJ = 125C 25C 200 -55C 100 80 60 VCE = 1.0 V VCE = 10 V 40 0.004 0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100 100 1.0 TJ = 25C IC, COLLECTOR CURRENT (mA) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 9. DC Current Gain 0.8 IC = 1.0 mA 0.6 10 mA 50 mA 100 mA 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) TA = 25C PULSE WIDTH = 300 ms 80 DUTY CYCLE 2.0% 300 mA 200 mA 40 100 mA 20 0 5.0 10 0 20 5.0 10 15 20 25 30 35 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) V, TEMPERATURE COEFFICIENTS (mV/C) TJ = 25C V, VOLTAGE (VOLTS) 1.2 1.0 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 40 Figure 11. Collector Characteristics 1.4 0.1 400 mA 60 Figure 10. Collector Saturation Region 0.8 IB = 500 mA 1.6 0.8 25C to 125C 0 *qVC for VCE(sat) - 55C to 25C -0.8 25C to 125C -1.6 qVB for VBE -2.4 0.1 100 *APPLIES for IC/IB hFE/2 Figure 12. "On" Voltages 0.2 - 55C to 25C 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 13. Temperature Coefficients www.onsemi.com 4 50 100 MMBT6521LT1G, SMMBT6521LT1G TYPICAL DYNAMIC CHARACTERISTICS 1000 VCC = 3.0 V IC/IB = 10 TJ = 25C 100 70 50 700 500 ts 300 200 t, TIME (ns) t, TIME (ns) 300 200 tr 30 20 td @ VBE(off) = 0.5 Vdc 10 7.0 5.0 100 70 50 tf 30 VCC = 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25C 20 3.0 1.0 2.0 20 30 5.0 7.0 10 3.0 IC, COLLECTOR CURRENT (mA) 50 70 10 1.0 100 2.0 3.0 500 70 100 10 TJ = 25C f = 100 MHz TJ = 25C f = 1.0 MHz 7.0 300 VCE = 20 V 200 5.0 V 100 Cib 5.0 Cob 3.0 2.0 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 1.0 0.05 50 0.1 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 16. Current-Gain -- Bandwidth Product Figure 17. Capacitance hfe 200 @ IC = 1.0 mA 7.0 5.0 VCE = 10 Vdc f = 1.0 kHz TA = 25C hoe, OUTPUT ADMITTANCE (m mhos) 10 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 20 50 200 20 hie , INPUT IMPEDANCE (k ) 50 Figure 15. Turn-Off Time C, CAPACITANCE (pF) f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 14. Turn-On Time 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 100 70 50 VCE = 10 Vdc f = 1.0 kHz TA = 25C hfe 200 @ IC = 1.0 mA 30 20 10 7.0 5.0 3.0 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 2.0 0.1 100 Figure 18. Input Impedance 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) Figure 19. Output Admittance www.onsemi.com 5 50 100 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) MMBT6521LT1G, SMMBT6521LT1G 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 FIGURE 21 0.05 P(pk) 0.02 0.03 0.02 t1 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN-569) ZqJA(t) = r(t) RqJA TJ(pk) - TA = P(pk) ZqJA(t) t2 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k Figure 20. Thermal Response 104 DESIGN NOTE: USE OF THERMAL RESPONSE DATA IC, COLLECTOR CURRENT (nA) VCC = 30 Vdc A train of periodical power pulses can be represented by the model as shown in Figure 21. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 20 was calculated for various duty cycles. To find ZqJA(t), multiply the value obtained from Figure 20 by the steady state value RqJA. Example: The MPS6521 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2) Using Figure 20 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88C. For more information, see ON Semiconductor Application Note AN569/D, available from the Literature Distribution Center or on our website at www.onsemi.com. 103 102 ICEO 101 ICBO AND 100 ICEX @ VBE(off) = 3.0 Vdc 10-1 10-2 -4 0 -2 0 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (C) Figure 21. IC, COLLECTOR CURRENT (mA) 400 1.0 ms 200 100 60 40 TC = 25C dc dc TJ = 150C 10 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 6.0 2.0 10 ms 1.0 s TA = 25C 20 4.0 The safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 22 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 20. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 ms 4.0 6.0 8.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 40 Figure 22. www.onsemi.com 6 MMBT6521LT1G, SMMBT6521LT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.25 3 E 1 2 T HE DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0 INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 --- MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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