Field effect transistors Transistors 4 effet de champ - Feldeffekt-Transistoren RATINGS _ . lp oO (at Tamb = 25 C) CHARACTERISTICS (at Tamb = 25 C, unless otherwise stated) ol ov at at at Conditions fa) at at |X t - : e| F f R| I TYPE !Ves!ps| 1p|Prot|Toper| tess |Ycs} Tpss |ps|%csore |ps|'o |ps |%cs| 4 \Yes| |Yos|| * [ies Re [RA 1 at at (a) (a) (a) 1) G Vpg70 Veg = 0 yl os v vijmal oW C nA Vv mA v Vv. Vv nA Vv. Vina mmho kHz|yumho [kHz pF |MHz| pF MHz dB | MHz I MQ maxjmax| max} max | max max min-max min - max min-max max max max max BFs76 {40 | 40] 50}360 0,25} 20] 8 - 80 |-15}0,8- 4 [15 |0,5 7 0 fio 1] 148 1 N] 110 BFS77 |30 | 30] 50/360 0,25] 15/50 15}4 -10 [15 Jo,5 | 0 fio is | ida 1 N| 110 BFS78 |30 | 30] 50/360 0,25] 15/20 -!100 | 15}2 - 6 |15 |o,5 | 0 |10 18 | 1] 8 I NR] 110E BFS79 |30 | 30] 50)360 0,25] 15] 8 - 80 | 15]0,8- 4 415 }o,5 | fio i | 1] 38 1 N] 110 BFS80 /30 | 30{10/300 I 20; 5 - $5 { 15{2,5- 6 ]ts ft 15 | 0 4,5-7,5 | 1 | 0,05} 3 4] Ep 2 1] 4 {400 fikaln} 104d BFT10 |40 | 40|25)300 | 150 |] 0,8 | 20/10 10 lo | 0 6 -20 1 4] 15) 1,5") 15] 1,48] 100 | ike} N|Ns274c BFTI! 25 | 25110/300 | 150 10 10 lo | 0 6-15 1 18 | 18] 6 15 PINS274c BFW10 |301| 30] 20/300 | 200 | 0,1 | 20) 8 - 20 | 15 8 {15 }o,5 | 15 | 0 3,5-6,5 | 1 185 1 5 14] o,a | 1 | 2,5 }100 |ikaln| 110aa BEW! | 30} 3952 300 || 200 | 0,1 | 20) 4 - 10 | 45 6 115 {0,5 | 15 | 0 3,0-6,5 | 1 {50 ! 5] 1] 0,8] 8 | 2,5 | 100 fike{N} 110aa an see Addens . BFWS4 150 , 501 /10/150 | 200, 0,1 | 30] 2- 10 | ts 6 {15 |o,5 | 15 | o 3,0-6,5 | 1 |20 1 6fr]3 1 |100 | 10 N| 110 BFW5S [50 | 50{ 10/150 | 200 | 0,1 | 30] 2- 10 | 15 6 |15 j0,5] 15 fo 3,0-6,5 | 1 120 1 6/1] 3 1] 40 | 10 N] si0 BFW56 [50 | 50] 10/150 | 200 | 0,1 | 30] 2 - 10 | 15 6 115 }o,5 | 15 | o 3,0-6,5 | 1 [20 t 6] 1] 3 1] 20 | 10 NI 110 BFW6t {25 | 25{ 20/300 {| 200] 20; 2- 20 {| 15 8 {15 fi 5 {0 2 -6,5 / 1 [es 1 6{ i {2 Nj 110Ad BFW96 |30 | 30! 50] 200 30 | 30}0 = 4,5/20 | 20ya} 20 5 11,3 1 6*) 1 | a4 N{ 110Ad BSR56 40] 50] 360 0,25} 20/50 - 15 0} 10 1] 178 1 N BSR57 401 50| 360 0,25] 20/20 -100 | 15 0 | 10 ie] 1] 8 1 N BSR58 40] 50| 360 0,25] 20] 8 - 80 | 15 0} 10 1] 1] 3 N BSV38 /25 | 25{ 10/300 } 150 | 0,25] 15]50 10/4 -10 {15 10,5 10,75; 0 |20 25 1 138 | 1 18 1 NINS148b BSV38P/25 | 25] 10;150 | 150 | 0,25] 15/50 1o]4 -10 [15 ]0,5 10,75] o [20 25 1 1] a [8 1 NINS142 Bsv39 |25 | 25] 10/300 | 150 | 0,5 | 15] 8-100 | 1olo,8- 6 15 0,5 10.75] 0 |20 70 1 18 | 1 |8 i NINS148b BSV39P/25 | 25] 10/150 | 150 | 0,5 | 15] 8 -100 | 1o/o,8- 6 |15 0,5 }0,5 | 0 |20 70 1 ig | 1 |8 1 NINS142 Bsv78 |40 | 40;50/350 | 175 | 0,251 20|50 15]3,75-11 J15 1 fo fio 2593) 4 io} 1 fs 1 N] 110 BsV79 [40 | 40/50/350 | 175 | 0,25] 20/20 15/2,0- 7715/1 (0 fio 4oa3{ 1 to} 1 15 1 Nj 110 Bsv80 |40 | 40/50]/350 | 175 | 0,25] 20] 10 15]1,0- 5/15 ]1 10 602 3) 4 lof 15 1 N| Hog Bsv8i |10 | 30/502)200 | 125 | 0,01] 10 5 to}t fo 5 0,5 1 N] 110ag Addendum: ome 30 ; 30) 10)150 | 200 | 0,1 io] 1-5 15 2,5/15 |0,5 | 15 0 2 1} 30 1 5 | t 10,8 1 NINS274c FWI , 30 | 30] 10/150 | 200 | 0,1 | 10f0,2-1,5 | 15 1,2}15 [0,5 ]15 | o 1 1} 10 i 5 | 1 Jo,s 1 NINS274e BF900' 20) 50/150 100 | 5] 3-30 | 15 5 415 |20u [15 | (8) } 10 ' ' BF905 20] 40/150 100 | 5] 2-25 4 15 5 15 |2on {15 & ? ott a. 1 10925 | 1 | 2 [200 J68 Jn Ns3so BF961 20) 30] 200 100] 5] 2-25] 45 4 (15 |20n 2) 10.3 7 tf ays 300 N |NS350 N|NS364 BFQ20 |40 } 40] 10] 38 0,3~ 1,5) 1510,5- 4 15 Brqzi [40 | 40/10) 38 03- 135| islotsea Ite 0,5) 15 300u) 0,85~1,2) 1 | 2" 1 7] 1 4}2 1 (AVgg =25mv) N} 118 BFQ25 251 101 300 10 240" dies : oe 0 poow 0585-12 1] 2! 1 71 3/2 1 (AVeg =50mv) NI its 740 - 1 - 16] 1] 100" 4 BFQ26 | see BFQIS but : Ip. /I,oe) = 0,9 min instead of 0,95'nin| yr yas || N} 118 i 1 | i i 4 : . ) typical value (a) The conditions apply to all parameters (1) Open drain (5) at Vg, = 10V 5 v,, =0 ") mini marked with (a), unless otherwise noted. bs Oo me ve , @) Peak (6) at Yyg 5 v . maxio um value (3) Max the (gny at Veg = 0 5 I= 0 (7) MOS-FET-TETRODE (4) at I = 1 ma = : D (8) at Vers ov; Voos = 4v