SKKT132/22E - Semikron - Datasheet.Live

SEMIPACK

®

2

Thyristor/ Diode Modules

SKKT 132 SKKH 132

SKMT 132

1)

SKNH 132

1)

SKKT 162 SKKH 162

SKKT SKKH

SKMT SKNH

Features

•Heat transfer through aluminium

oxide ceramic isolated metal

baseplate

•Hard soldered joints for high

reliability

•UL recognized, file no. E 63 532

Typical Applications

•DC motor control (e. g. for

machine tools)

•Temperature control (e. g. fo r

ovens, chemical processes)

•Professional light dimming

(studios, theaters)

V

RSM

V

RRM

(dv/dt)

cr

I

TRMS

(maximum values for continuous op erat ion)

V

DRM

220 A 250 A 220 A 250 A

I

TAV

(sin. 180; T

case

= 80 °C)

VV V/µs 148 A 168 A 148 A 168 A

SKKT SKKT SKKH SKKH

900 800 500 132/08 D 162/08 D 132/08 D 162/08 D

1300 1200 1000 132/12 E 162/12 E 132/12 E 162/12 E

1500 1400 1000 132/14 E 162/14 E 132/14 E 162/14 E

1700 1600 1000 132/16 E 162/16 E 132/16 E 162/16 E

1900 1800 1000 132/18 E 162/18 E 132/18 E 162/18 E

2100 2000 1000 132/20 E – 132/20 E –

2300 2200 1000 132/22 E – 132/22 E –

Symbol Conditions SKKT 132 SKKT 162 Units

SKKH 132 SKKH 162

I

TAV

sin. 180; (T

case

= . . .) 130 (87 °C) 160 (83 °C) A

I

D

B2/B6 T

amb

= 45 °C, P3/180 77/100 – A

T

amb

= 35 °C, P3/180F 170/200 190/230 A

P 16/200F 250/320 290/360 A

I

RMS

W1/W3 P 3/180F 240/3x163 265/3x185 A

P 16/200F 305/3x250 333/3x312 A

I

TSM

T

vj

= 25 °C; 10 m s 4 700 5 400 A

T

vj

= 125 °C; 10 ms 4 000 5 000 A

i

2

tT

vj

= 25 °C; 8,3 ... 10 ms 110 000 145 000 A

2

s

T

vj

= 125 °C; 8,3 ... 10 ms 80 000 125 000 A

2

s

t

gd

T

vj

= 25 °C; I

G

= 1 A;

di

G

/dt = 1 A/µs1µs

t

gr

V

D

= 0,67 . V

DRM

2µs

(di/dt)

cr

T

vj

= 125 °C 200 A/µs

t

q

T

vj

= 125 °C typ. 50 . . . 1 5 0 µs

I

H

T

vj

= 25 °C typ. 150; max. 400 mA

I

L

T

vj

= 25 °C; R

G

= 33 Ωtyp. 0,3; max. 1 A

V

T

vj

= 25 °C; I

T

= 500 A max. 1,8 max. 1,6 V

V

T(TO)

T

vj

= 125 °C10,85V

r

T

vj

= 125 °C 1,6 1,5 mΩ

I

DD

; I

RD

T

vj

= 125 °C; V

DRM

; V

RRM

max. 40 max. 40 mA

V

GT

T

vj

= 25 °C; d. c. 2 V

I

GT

T

vj

= 25 °C; d. c. 200 mA

V

GD

T

vj

= 125 °C; d. c. 0,25 V

I

GD

T

vj

= 125 °C; d. c. 10 mA

R

thjc

cont. 0,18/0,09 0,17/0,085 °C/W

sin. 180 per thyristor 0,19/0,095 0,18/0,09 °C/W

rec.120 per m odule 0,21/0,105 0,20/0,10 °C/W

R

thch

0,10/0,05 °C/W

T

vj

, T

stg

– 40 . . . +125 °C

V

isol

a. c. 50 Hz; r.m.s.; 1 s/1 min 3600/3000 V∼

M

1

to heatsink SI (US) units 5 (44 lb. in.) ±15 %

2)

Nm

M

2

to terminals 5 (44 lb. in.) ±15 % Nm

a5

.

9,81 m/s

2

w approx. 250 g

Case → page B 1 – 94 SKKT: A 21 SKMT: A 50

SKKH: A 22 SKNH: A 61

















1)

SKMT 132, SKNH 132 available

on request

2)

See the assembly instructions

0896