IHW40N120R5 ResonantSwitchingSeries ReverseConductingIGBTwithmonolithicbodydiode Features: C *Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutation *TRENCHSTOPTMtechnologyoffering: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparallelswitchingcapabilityduetopositive temperaturecoefficientinVCEsat *LowEMI *QualifiedaccordingtoJESD-022fortargetapplications *Pb-freeleadplating;RoHScompliant *Halogenfree(accordingtoIEC61249-2-21) *CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: *Inductioncooking *Microwaveovens G C E KeyPerformanceandPackageParameters Type IHW40N120R5 Datasheet www.infineon.com VCE IC VCEsat,Tvj=25C Tvjmax Marking Package 1200V 40A 1.55V 175C H40MR5 PG-TO247-3 PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.1 2018-04-17 IHW40N120R5 ResonantSwitchingSeries TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Datasheet 2 V2.1 2018-04-17 IHW40N120R5 ResonantSwitchingSeries MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj25C VCE 1200 V DCcollectorcurrent,limitedbyTvjmax Tc=25C Tc=100C IC 80.0 40.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 120.0 A Turn off safe operating area VCE1200V,Tvj175C,tp=1s - 120.0 A Diodeforwardcurrent,limitedbyTvjmax Tc=25C Tc=100C IF 80.0 40.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 120.0 A Gate-emitter voltage TransientGate-emittervoltage(tp10s,D<0.010) VGE 20 25 V PowerdissipationTc=25C PowerdissipationTc=100C Ptot 394.0 197.0 W Operating junction temperature Tvj -40...+175 C Storage temperature Tstg -55...+150 C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics IGBT thermal resistance, junction - case Rth(j-c) - - 0.38 K/W Diode thermal resistance, junction - case Rth(j-c) - - 0.38 K/W Thermal resistance junction - ambient Rth(j-a) - - 40 K/W Datasheet 3 V2.1 2018-04-17 IHW40N120R5 ResonantSwitchingSeries ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. 1200 - - VGE=15.0V,IC=40.0A Tvj=25C Tvj=125C Tvj=175C - 1.55 1.80 1.90 1.85 - - 1.90 2.20 2.30 2.10 - Unit StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA Collector-emitter saturation voltage VCEsat V V Diode forward voltage VF VGE=0V,IF=40.0A Tvj=25C Tvj=125C Tvj=175C Gate-emitter threshold voltage VGE(th) IC=1.00mA,VCE=VGE 5.1 5.8 6.4 V Zero gate voltage collector current ICES VCE=1200V,VGE=0V Tvj=25C Tvj=175C - 800 100 - A Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=40.0A - 30.0 - S Integrated gate resistor rG V none ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 2370 - - 70 - - 60 - - 310.0 - nC - 13.0 - nH DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE VCE=25V,VGE=0V,f=1MHz VCC=960V,IC=40.0A, VGE=15V pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. Tvj=25C, VCC=600V,IC=40.0A, VGE=0.0/15.0V, RG(on)=10.0,RG(off)=10.0, L=175nH,C=40pF L,CfromFig.E Energy losses include "tail" and diode reverse recovery. - 420 - ns - 20 - ns - 1.60 - mJ dv/dt=200.0V/s - 0.22 - mJ IGBTCharacteristic,atTvj=25C Turn-off delay time td(off) Fall time tf Turn-off energy Eoff Turn-off energy, soft switching Eoff Datasheet 4 V2.1 2018-04-17 IHW40N120R5 ResonantSwitchingSeries SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. Tvj=175C, VCC=600V,IC=40.0A, VGE=0.0/15.0V, RG(on)=10.0,RG(off)=10.0, L=175nH,C=40pF L,CfromFig.E Energy losses include "tail" and diode reverse recovery. - 490 - ns - 90 - ns - 2.90 - mJ dv/dt=200.0V/s - 0.57 - mJ IGBTCharacteristic,atTvj=175C Turn-off delay time td(off) Fall time tf Turn-off energy Eoff Turn-off energy, soft switching Eoff Datasheet 5 V2.1 2018-04-17 IHW40N120R5 ResonantSwitchingSeries 400 100 360 320 Ptot,POWERDISSIPATION[W] IC,COLLECTORCURRENT[A] not for linear use 10 1 280 240 200 160 120 80 40 0.1 1 10 100 0 1000 25 VCE,COLLECTOR-EMITTERVOLTAGE[V] 50 75 100 125 150 175 TC,CASETEMPERATURE[C] Figure 1. Forwardbiassafeoperatingarea (D=0,TC=25C,Tvj175C;VGE=15V;tp=1s) Figure 2. Powerdissipationasafunctionofcase temperature (Tvj175C) 80 120 VGE = 20V 60 40 20 17V 15V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 100 13V 80 11V 9V 60 8V 7V 40 5V 20 0 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[C] Figure 3. Collectorcurrentasafunctionofcase temperature (VGE15V,Tvj175C) Datasheet 0 1 2 3 4 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 4. Typicaloutputcharacteristic (Tvj=25C) 6 V2.1 2018-04-17 IHW40N120R5 ResonantSwitchingSeries 120 120 Tvj = 25C Tvj =175C VGE = 20V 100 17V 15V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 100 13V 80 11V 9V 60 8V 7V 40 5V 80 60 40 20 0 20 0 1 2 3 4 0 5 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] 2 4 6 8 10 12 14 VGE,GATE-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=175C) Figure 6. Typicaltransfercharacteristic (VCE=20V) IC = 20A IC = 40A IC = 80A td(off) tf 1000 2.5 t,SWITCHINGTIMES[ns] VCEsat,COLLECTOR-EMITTERSATURATION[V] 3.0 2.0 100 1.5 1.0 25 50 75 100 125 150 10 175 Tvj,JUNCTIONTEMPERATURE[C] 0 10 20 30 40 50 60 70 Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof afunctionofjunctiontemperature collectorcurrent (VGE=15V) (inductiveload,Tvj=175C,VCE=600V, VGE=0/15V,rG=10,Dynamictestcircuitin Figure E) Datasheet 80 IC,COLLECTORCURRENT[A] 7 V2.1 2018-04-17 IHW40N120R5 ResonantSwitchingSeries 1E+4 1000 td(off) tf t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] td(off) tf 1000 100 10 0 10 20 30 40 100 10 50 25 rG,GATERESISTOR[] 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[C] Figure 9. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tvj=175C,VCE=600V, VGE=0/15V,IC=40A,Dynamictestcircuitin Figure E) Figure 10. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=600V,VGE=0/15V, IC=40A,rG=10,Dynamictestcircuitin Figure E) 7.0 7 6 6.2 E,SWITCHINGENERGYLOSSES[mJ] VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] Eoff typ. min. max. 5.4 4.6 3.8 5 4 3 2 1 3.0 25 50 75 100 125 150 0 175 Tvj,JUNCTIONTEMPERATURE[C] Figure 11. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=1mA) Datasheet 0 10 20 30 40 50 60 70 80 IC,COLLECTORCURRENT[A] Figure 12. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=175C,VCE=600V, VGE=0/15V,rG=10,Dynamictestcircuitin Figure E) 8 V2.1 2018-04-17 IHW40N120R5 ResonantSwitchingSeries 4.5 3.0 Eoff 4.1 3.7 3.3 2.9 2.5 2.7 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] Eoff 0 10 20 30 40 2.4 2.1 1.8 1.5 50 25 rG,GATERESISTOR[] 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[C] Figure 13. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tvj=175C,VCE=600V, VGE=0/15V,IC=40A,Dynamictestcircuitin Figure E) Figure 14. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=600V,VGE=0/15V, IC=40A,rG=10,Dynamictestcircuitin Figure E) 3.5 1.50 Tvj = 25C Tvj = 175C Eoff E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 1.25 3.0 2.5 1.00 0.75 0.50 0.25 2.0 400 450 500 550 600 650 700 750 800 0.00 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=175C,VGE=0/15V, IC=40A,rG=10,Dynamictestcircuitin Figure E) Datasheet 0 10 20 30 40 50 60 70 80 IC,COLLECTORCURRENT[A] Figure 16. Typicalturnoffswitchingenergylossfor softswitching (inductiveload,VCE=600V,VGE=0/15V, RG=10,DynamictestcircuitinFigureE) 9 V2.1 2018-04-17 IHW40N120R5 ResonantSwitchingSeries 16 1E+4 VCC=240V VCC=960V Cies Coes Cres 12 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 14 10 8 6 1000 100 4 2 0 0 40 80 120 160 200 240 280 10 320 QGE,GATECHARGE[nC] 15 20 25 30 1 Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W] Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W] 10 Figure 18. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.01 single pulse 1E-4 0.001 0.01 0.1 1 Figure 19. IGBTtransientthermalresistance (D=tp/T) D = 0.5 0.1 0.2 0.1 0.05 0.02 0.01 single pulse 0.01 0.001 1E-5 tp,PULSEWIDTH[s] Datasheet 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 17. Typicalgatecharge (IC=40A) 0.001 1E-5 0 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 20. Diodetransientthermalimpedanceasa functionofpulsewidth (D=tp/T) 10 V2.1 2018-04-17 IHW40N120R5 ResonantSwitchingSeries 120 4.0 Tvj = 25C Tvj = 175C IF = 20A IF = 40A IF = 80A 3.5 VF,FORWARDVOLTAGE[V] IF,FORWARDCURRENT[A] 100 80 60 40 20 0 3.0 2.5 2.0 1.5 0 1 2 3 4 1.0 5 VF,FORWARDVOLTAGE[V] Figure 21. Typicaldiodeforwardcurrentasafunction offorwardvoltage Datasheet 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[C] Figure 22. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature 11 V2.1 2018-04-17 IHW40N120R5 ResonantSwitchingSeries Package Drawing PG-TO247-3 Datasheet 12 V2.1 2018-04-17 IHW40N120R5 ResonantSwitchingSeries Testing Conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. Datasheet 13 V2.1 2018-04-17 IHW40N120R5 ResonantSwitchingSeries RevisionHistory IHW40N120R5 Revision:2018-04-17,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2018-04-17 Final Datasheet Datasheet 14 V2.1 2018-04-17 Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. Publishedby InfineonTechnologiesAG 81726Munchen,Germany (c)InfineonTechnologiesAG2018. AllRightsReserved. ImportantNotice Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ("Beschaffenheitsgarantie").Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer'scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer'sproductsandanyuseof theproductofInfineonTechnologiesincustomer'sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityof customer'stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication. Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest InfineonTechnologiesoffice(www.infineon.com). PleasenotethatthisproductisnotqualifiedaccordingtotheAECQ100orAECQ101documentsoftheAutomotive ElectronicsCouncil. Warnings Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestion pleasecontactyournearestInfineonTechnologiesoffice. ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorized representativesofInfineonTechnologies,InfineonTechnologies'productsmaynotbeusedinanyapplicationswherea failureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury.