ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VRRM = 1700 V
IF=75A
Die size: 11.9 x 6.1 mm Doc. No. 5SYA1656-02 Apr. 02
•
Fast Recovery, Low losses
•
Soft reverse recovery
•
High ruggedness
Maximum Rated Values (Tj = 25°C, unless specified otherwise)
Parameter Symbol Conditions Values Unit
Maximum Reverse Voltage VRRM 1700 V
DC Forward Current IF75 A
Maximum Forward Current IFM Limited by Tjmax 150 A
Operating Temperature Tj-40 .. +150 °C
Characteristic Values (Tj = 25°C, unless specified otherwise)
Parameter Symbol Conditions min. typ. max. Unit
Tj = 25 °C 1.7 2.0 2.3 V
Forward Voltage VFIF = 75 A Tj = 125 °C 2.05 V
Tj = 25 °C 100 µAReverse leakage current IRVR = 1700 V Tj = 125 °C 1.5 mA
Reverse recovery current Irrm 66 A
Reverse recovery charge Qrr 19 µC
Reverse recovery time trr 600 ns
Reverse recovery energy Erec
IF = 75 A, VCC = 900 V,
di/dt = 800 A/µs, Lσ = 160 nH,
Tj = 125 °C, Inductive load,
Switch : 5SMX12K1700 10 mJ
Diode-Die
5SLX12G1700
5SLX12G1700
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1656-02 Apr. 02 page 2 of 3
Typical Performance Graphs
0
25
50
75
100
125
150
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VF [V]
IF [A]
125°C
25°C
-40°C
0
2
4
6
8
10
12
14
16
18
0 25 50 75 100 125 150
IF [A]
Erec [mJ]
0
10
20
30
40
50
60
70
80
90
Qrr [µC], Ir r [A]
Irr
Erec
Qrr
VCC = 900 V
di/dt = 800 A/µs
Tvj = 125 °C
Lσ = 160 nH
Fig. 1 Typical diode forward characteristics Fig. 2 Typical reverse recovery characteristics
vs forward current
-75
-50
-25
0
25
50
75
100
0 400 800 1200 1600
time [ns]
IR [A]
-1200
-1000
-800
-600
-400
-200
0
200
VR [V]
VR
IR
VCC = 900 V
IF = 75 A
di/dt = 800 A/µs
Tvj = 125 °C
Lσ = 160 nH
0
2
4
6
8
10
12
14
0 400 800 1200 1600 2000
di/dt [A/µs]
Erec [mJ]
0
20
40
60
80
100
120
140
Qrr [µC], Irr [A]
Erec
Qrr
Irr
VCC = 900 V
IF = 75 A
Tvj = 125 °C
Lσ = 160 nH
Fig. 3 Typical diode reverse recovery behaviour Fig. 4 Typical reverse recovery characteristics
vs di/dt
5SLX12G1700
Mechanical Characteristics
Parameter Unit
Overall die L x W 11.9 x 6.1 mm
Exposed
Front metal L x W 10.3 x 4.5 mm
Dimensions
Thickness 370 ± 15 µm
Front AISi1 4 µm
Metallization Back1) AI / Ti / Ni / Ag 1.2 µm
1) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA2033-01 April 02.
Outline Drawing
Note : All dimensions are shown in mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB S witzerlan d Ltd Doc. No. 5SYA1656-02 Apr. 02
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone+41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abbsem.com
