SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE BVcEO hee NE (v) Min.-Max. @1,Vce(V) (db) 2N3391A 5.0 . 2N3844 \ : " 10.2 2N3844A , : 8.5 2N3845 ae 10.2 2N3845A 8.5 Conditions Device Type 2N3900A 2N3901 2N5232A 2N5249A 2N5306A 2N5308A 2N5309 2N5310 2N5311 SILICON SIGNAL LOW NOISE AMPLIFIERS T0-92 PACKAGE BVcEO here NF Device Type (V) Min.-Max. @ Ico, VcE{V) (db) Conditions GES5827A GESS828A GES6000 GES6001 WWwon GES6004 GES6005 GES6010 GES6011 GES6014 WoW WwW GES6015 GES929 GES930 GES5306A GES5308A D3881-4 D38S87 D38S8-10 D38W8-10 D38W 13-14 GES6012 GES6013 GES6016 GES6017 109SILICON SIGNAL DARLINGTON TRANSISTORS TO-92 PACKAGE BVcEO hee VcE(SAT) (v) Min.-Max. @ lo, VceE (Vv) (V) Max. @ lo, Ip 200mA, 200uA 200mA, 200KuA 200mA, 200uA 200mA, 200uA 200mA, 200UA 200mA, 200HA 500mA, 500uA 500mA, 500uA 500mA, 500uA GES5305 GES5306 GES5306A GES5307 GES5308 GES5308A D38L1-3 D39C1-3 D39C4-6 an NUUO RARE RA TO-98 PACKAGE BVcEO hee VcE(SAT) (v) Min.-Max. @ lo,Vcge (Vv) (V) Max. @ lc. Ip 2N5305 200mA, 200HA 2N5306 200mA, 200HA 2N5306A 200mA, 200uUA 2N5307 ' 200mA, 200HA 2N5308 200mA, 200HA 2N5308A 200mA, 200HA D16P1 200mA, 200HA Type SILICON SIGNAL HIGH VOLTAGE TYPES TO-92 PACKAGE Device BVceo hee lcBo VcEISAT) NPN (V) Min.-Max. @ Ic, Voge (V) Max. @ Vog (Vv) (V) Max. @ lo, te GES6218 1.0 10mA, 1mA GES6219 2 1.0 1OmA, IMA GES6220 2.0 20mA, 2mA GES6221 i 2.3 20mA, 2mMA TO0-98 PACKAGE Device BVceo hee tcBo VcE(SAT) NPN (V) = Min.-Max. @ I, Voge (V) Max. @ Voe(V) (Vv) Max. @ lo. Ig 2N3877 20 2mA, 5 -125 10mA, 1mA 2N3877A 20 2mA, 5 125 10mA, 1mA 2N5174 40-600 10mA, 5 -950 10mA, 1mA 2N5175 55-160 10mA, 5 950 10mA, 1mA 2N5176 140-300 10mA, 5 -950 10mA, 1mA 111 HAAUUALULUULSilicon a Transistors 2N5307,8,8A EE ___ SSS The General! Electric 2N5307, 2N5308 and 2N5308A are NPN, silicon, planar, epitaxial, passivated Dar- lington monolithic amplifiers. These devices are especially suited for preamplifier input stages requiring input impedances of several megohms or extremely low level, high gain, low noise amplifier applications. Additional applications include medium speed switching circuits in consumer and industrial control appli- cations. absolute maximum ratings: (25C) (unless otherwise specified) Voltages Collector to Base Vono 40 Volts Collector to Emitter Vexo 40 Volts Emitter to Base Vino 12 Volts Current Collector (Steady State) Te 300 mA Collector (Pulsed) * Ic 500 mA Base (Steady State) In 50 mA Dissipation wore ft 2d Total Power (Ts & 25 C)+ Pr 400 mW == ' 4 s mm Total Power with Heatsink (T, S 25 C)}+ Pr 600 mW Serer * Pa Total Power with Heatsink (Tc S 25 C)t#t Pr 900 mW of Bemmaiase ~s Temperature Storage Tats 65 to +150 C Operating T; 65 to +125 C Lead, 146 + 142 from case for 10 sec, max. Ti +260 C 6 *Pulse conditions: 300 ywsec. pulse width, 2% duty cycle. Tone aeTwten, 70 ano" 290 row HE AEATNG +Derate 4.0 mW/ C for increase in ambient temperature above 25 C. oreatenne Tore SLE oem enTnOLtD mot Zot +tDerate 6.0 mW/ C for increase in ambient temperature above 25 C. E SETHEEN.30 a ENO OF LEAD aan OF oxo tttDerate 9.0 mW/ C for increase in case temperature above 25 C. Equiv. Circuit Son nesta choose mae ne STATIC CHARACTERISTICS Min. Max. Collector to Base Breakdown Voltage (Ic == 0.1uA, Ic = 0) Vipryceo 40 Volts Collector to Emitter Breakdown Voltage (Ic = 10mA, Is = 0) (BR)CEO 40 Volts Emitter to Base Breakdown Voltage (Is = 0.14A, Is = 0) (BR)EBO 12 Volts Forward Current Transfer Ratio (Ves = 5V, Ic = 2mA) 2N5307 hee 2000 20000 (Voce = 5V, Ic = 100mA) 2N5307 hee 6000 (Vee = 5V, Ic = 2mA) 2N5308, A hee 7000 70000 (Vcr = 5V, Ic = 100mA) 2N5308, A hee 20000 Collector Cutoff Current (Ves = 40V, Iz = 0) lego 100 nA (Ves = 40V, In = 0, Ta = 100 C) lego 20 BA Emitter Cutoff Current (Vis = 12V, Ic = 0) leso 100 nA Collector Emitter Saturation Voltage (Ic = 200mA, Is = 0.2mA) Vee(sat) 1.4 Volts Base Emitter Saturation Voltage (Ic = 200mA, Ip = 0.2mA) Vee(sat) 1.6 Volts Base Emitter Voltage (Vcx = 5V, Ic = 200mA) Vee 1.5 Volts DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio Min. Typ. Max. (Vce = 5V, Ic = 2mA, f = 1kHz) 2N5307 hye 2000 (Voce = 5V, Ic = 2mA, f = 1kHz) 2N5308, A hie 7000 (Vee = 5V, Ic = 2mA, f = 1kHz) |hfe| 15.6 dB Gain Bandwidth Product (Vce = 5V, Ic = 2mA, f = 10 MHz) fy 60 MHz Input Impedance (Voce 5V, Ic 2mA, f = 1 kHz) hie 650 kohms Collector Base Capacitance (Vos = 10V, f = 1 MHz) Cop 7.6 10 pF Emitter Capacitance (Vin = 0.5V, f = 1 MHz) Cop 10.5 pF 4822N5307, 8, 8A 2N5308A only Min. Typ. Max. Units Noise Voltage (Ic = 0.6 mA, Vee = 5V, Re = 160k2 f = 10Hz to 10kHz, B.W. = 15.7 kHz) er 195 230 nV/VHz_ NOTE: as measured on a Quan-Tech Model 2283/2181M test set with 10 Hz filter modified by Quan-Tech to a wideband (f = 10 Hz to 10 kHz, B.W. = 15.7 kHz) Vee (sat)~SASE-EMITTER SATURATION VOLTAGE - VOLTS filter. Typical hzg vs. Ic Typical Curves Normalized hyzs vs. Ic PTT T Veg 5.OVOLTS p CE __ ! 2N5307' | | I/ Ig: 1000 4 686! 2 4680 Ie COLLECTOR CURRENT (mA) Vee (gat) COLLECTOR-EMITTER VOLTAGE -VOLTS Vex(saty VS. Ic Tas-55C Tye 254C TIg- COLLECTOR CYRRENT- ma SSS t 4 -F t : Led a dd 4 20 Ig/Ig* 1000 Ta *- 55C Taseste Ta Ig- COLLECTOR CURRENT-mA Vee ~ BASE EMITTER VOLTAGE-VOLTS 483 35 TTT veers | IM an Par Tas B5C/ z Ul tas2src 2 23) 4 2 20 A N ! Zz Y L ~ 8 y Y Ta 2la0%C N zo. Le N t } a5 = = r eH Mat N N . 14 & 1.0 3 i Le N 8 jeanne rT Le 400 1000 wos or ml N oor 0.} 10 100 1000 I-COLLECTOR CURRENT-mA Vou vs. Ie Transconductance Characteristic, Vax vs. Ic Voce + 5 Tar-S8C Ta=l00C Ic-COLLECTOR CURRENT - mA2N5307, 8, 8A logo vs. Ts lsx0 vs. Ta hrp vs. Ts lego V* Vep"5V Icgo- COLLECTOR CUTOFF CURRENT-pA Tego- EMITTER CUTOFF CURRENT-pA higg NORMALIZED YO 25C VALUE ' +30 -20-40 0 10 20 30 40 SO 60 70 80 90 \ Ta~ AMBIENT TEMPERATURE -*C "30-20 40 0 20 30 40 50 60 7 80 90 Ta AMBIENT TEMPERATURE *C Ta -AMBIENT TEMPERATURE C Equivalent Input Noise Voltage and Current vs. Bias Current a Veg 2 5V Ta # 25C NOTE: OPTIMUM SOURCE RESISTANCE, Rg ~ in a 2 Ro Ti iz 3 33 = e@7 (10OHz) ta GOOH2) = : ww Ww 82 2 a 3 > % 2 3 24 L2 2: . owen ig (kHz) ah (lO Hz) (loKHz) ee etl 0 4 2 4 & 8 I 2 4 COLLECTOR CURRENT mA NOTE: Due to the noise characteristics of this device versus frequency, calculation of noise figure (N.F.) from es, is values is not accurate [as is the case with field effect transistors (F.E.T.s) ]. 484| 2N5307, 8, 8A | Typical Collector Characteristics Tye 100C pt 4a I-COLLECTOR CURRENT-mA Te~COLLECTOR CURRENT-mA TptlnA Vce-COLLECTOR-EMITTER VOLTAGE-VOLTS Voce COLLECTOR-EMITTER VOLTAGE -VOLTS Ig-COLLECTOR CURRENT-mA Ic-COLLECTOR CURRENT-mA Tas2sec Vop-COLLECTOR-EMITTER VOLTAGE -VOLTS Tas 25% Veg COLLECTOR-EMITTER VOLTAGE - VOLTS 485 Ta 55C Ig-COLLECTOR CURRENT-mA Vog-COLLECTOR-EMITTER VOLTAGE-VOLTS Ig-COLLECTOR CURRENT-mA Vee -COLLECTOR-EMITTER VOLTAGE -VOLTS