Low Distortion, 1.5 W Audio
Power Amplifier
SSM2211
Rev. E
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responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
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Fax: 781.461.3113 ©2008 Analog Devices, Inc. All rights reserved.
FEATURES
1.5 W output with THD + N < 1%
Differential bridge-tied load output
Single-supply operation: 2.7 V to 5.5 V
Functions down to 1.75 V
Wide bandwidth: 4 MHz
Highly stable phase margin: >80°
Low distortion: 0.2% THD + N @ 1 W output
Excellent power supply rejection
APPLICATIONS
Portable computers
Personal wireless communicators
Hands-free telephones
Speaker phones
Intercoms
Musical toys and talking games
FUNCTIONAL BLOCK DIAGRAM
V
OUT
B
IN–
IN+
SHUTDOWN
BYPASS
V
OUT
A
V– (GND)
BIAS
00358-001
SSM2211
Figure 1.
GENERAL DESCRIPTION
The SSM22111 is a high performance audio amplifier that
delivers 1 W rms of low distortion audio power into a bridge-
connected 8 Ω speaker load (or 1.5 W rms into a 4 Ω load).
The SSM2211 operates over a wide temperature range and is
specified for single-supply voltages between 2.7 V and 5.5 V.
When operating from batteries, it continues to operate down to
1.75 V. This makes the SSM2211 the best choice for unregulated
applications, such as toys and games.
Featuring a 4 MHz bandwidth and distortion below 0.2% THD
+ N @ 1 W, superior performance is delivered at higher power
or lower speaker load impedance than competitive units.
Furthermore, when the ambient temperature is at 25°C, THD +
N < 1%, and VS = 5 V on a four-layer PCB, the SSM2211
delivers a 1.5 W output.
The low differential dc output voltage results in negligible
losses in the speaker winding and makes high value dc blocking
capacitors unnecessary. The battery life is extended by using
shutdown mode, which typically reduces quiescent current
drain to 100 nA.
The SSM2211 is designed to operate over the −40°C to +85°C
temperature range. The SSM2211 is available in 8-lead SOIC
(narrow body) and LFCSP (lead frame chip scale) surface-
mount packages. The advanced mechanical packaging of the
LFCSP models ensures lower chip temperature and enhanced
performance relative to standard packaging options.
Applications include personal portable computers, hands-free
telephones and transceivers, talking toys, intercom systems, and
other low voltage audio systems requiring 1 W output power.
1 Protected by U.S. Patent No. 5,519,576.
SSM2211
Rev. E | Page 2 of 24
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Electrical Characteristics ................................................................. 3
Absolute Maximum Ratings ............................................................ 5
Thermal Resistance ...................................................................... 5
ESD Caution .................................................................................. 5
Pin Configurations and Function Descriptions ........................... 6
Typical Performance Characteristics ............................................. 7
Product Overview ........................................................................... 14
Thermal Performance—LFCSP ................................................ 14
Typical Applications ....................................................................... 15
Bridged Output vs. Single-Ended Output Configurations ... 15
Speaker Efficiency and Loudness ............................................. 15
Power Dissipation....................................................................... 16
Output Voltage Headroom ........................................................ 17
Automatic Shutdown-Sensing Circuit ..................................... 17
Shutdown-Circuit Design Example ......................................... 18
Start-Up Popping Noise ............................................................. 18
SSM2211 Amplifier Design Example .................................. 18
Single-Ended Applications ........................................................ 19
Driving Two Speakers Single Endedly ..................................... 19
Evaluation Board ........................................................................ 20
LFCSP PCB Considerations ...................................................... 20
Outline Dimensions ....................................................................... 21
Ordering Guide .......................................................................... 22
REVISION HISTORY
4/08—Rev. D to Rev. E
Changes to Features .......................................................................... 1
Changes to General Description .................................................... 1
Changes to Supply Current in Table 1 and Table 2 ...................... 3
Changes to Supply Current in Table 3 ........................................... 4
Changes to Absolute Maximum Ratings ....................................... 5
Changes to Figure 41 ...................................................................... 14
Changes to Equation 7, Equation 8, and Equation 10 ............... 16
Changes to Figure 47 ...................................................................... 17
Changes to Automatic Shutdown-Sensing Circuit Section ...... 18
Changes to SSM2211Amplifier Design Example Section ......... 19
Changes to Driving Two Speakers Single Endedly Section ...... 20
Changes to Figure 50 ...................................................................... 20
Changes to Evaluation Board Section .......................................... 20
Changes to Figure 51 ...................................................................... 20
Changes to Ordering Guide .......................................................... 22
11/06—Rev. C to Rev. D
Updated Format .................................................................. Universal
Changes to General Description .................................................... 1
Changes to Electrical Characteristics ............................................ 3
Changes to Absolute Maximum Ratings ....................................... 5
Added Table 6 .................................................................................... 6
Changes to Figure 32 ...................................................................... 11
Changes to the Product Overview Section ................................. 14
Changes to the Output Voltage Headroom Section ................... 17
Changes to the Start-Up Popping Noise Section ........................ 18
Changes to the Evaluation Board Section ................................... 20
Updated Outline Dimensions ....................................................... 21
Changes to Ordering Guide .......................................................... 21
10/04—Data Sheet Changed from Rev. B to Rev. C
Updated Format .................................................................. Universal
Changes to General Description ..................................................... 1
Changes to Table 5 ............................................................................. 4
Deleted Thermal Performance—SOIC Section ........................... 8
Changes to Figure 31 ...................................................................... 10
Changes to Figure 40 ...................................................................... 12
Changes to Thermal Performance—LFCSP Section ................. 13
Deleted Figure 52, Renumbered Successive Figures .................. 14
Deleted Printed Circuit Board Layout—SOIC Section ............. 14
Changes to Output Voltage Headroom Section ......................... 16
Changes to Start-Up Popping Noise Section .............................. 17
Changes to Ordering Guide .......................................................... 20
10/02—Data Sheet Changed from Rev. A to Rev. B
Deleted 8-Lead PDIP ......................................................... Universal
Updated Outline Dimensions ....................................................... 15
5/02—Data Sheet Changed from Rev. 0 to Rev. A
Edits to General Description ........................................................... 1
Edits to Package Type ....................................................................... 3
Edits to Ordering Guide ................................................................... 3
Edits to Product Overview ............................................................... 8
Edits to Printed Circuit Board Layout Considerations ............. 13
Added section Printed Circuit Board Layout
Considerations—LFCSP ................................................................ 14
SSM2211
Rev. E | Page 3 of 24
ELECTRICAL CHARACTERISTICS
VDD = 5.0 V, TA = 25°C, RL = 8 Ω, CB = 0.1 µF, VCM = VDD/2, unless otherwise noted.
Table 1.
Parameter Symbol Conditions Min Typ Max Unit
GENERAL CHARACTERISTICS
Differential Output Offset Voltage VOOS AVD = 2, −40°C ≤ TA ≤ +85°C 4 50 mV
Output Impedance ZOUT 0.1 Ω
SHUTDOWN CONTROL
Input Voltage High VIH ISY = <100 mA 3.0 V
Input Voltage Low VIL ISY = normal 1.3 V
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 4.75 V to 5.25 V 66 dB
Supply Current ISY V
OUTA = VOUTB = 2.5 V, −40°C ≤ TA ≤ +85°C 9.5 20 mA
Supply Current, Shutdown Mode ISD Pin 1 = VDD (see Figure 32), −40°C ≤ TA ≤ +85°C 0.1 1 μA
DYNAMIC PERFORMANCE
Gain Bandwidth Product GBP 4 MHz
Phase Margin ΦM 86 Degrees
AUDIO PERFORMANCE
Total Harmonic Distortion THD + N P = 0.5 W into 8 Ω, f = 1 kHz 0.15 %
Total Harmonic Distortion THD + N P = 1.0 W into 8 Ω, f = 1 kHz 0.2 %
Voltage Noise Density en f = 1 kHz 85 nV√Hz
VDD = 3.3 V, TA = 25°C, RL = 8 Ω, CB = 0.1 µF, VCM = VDD/2, unless otherwise noted.
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
GENERAL CHARACTERISTICS
Differential Output Offset Voltage VOOS AVD = 2, −40°C ≤ TA ≤ +85°C 5 50 mV
Output Impedance ZOUT 0.1 Ω
SHUTDOWN CONTROL
Input Voltage High VIH ISY = <100 μA 1.7 V
Input Voltage Low VIL ISY = normal 1 V
POWER SUPPLY
Supply Current ISY VOUTA = VOUTB = 1.65 V, −40°C ≤ TA ≤ +85°C 5.2 20 mA
Supply Current, Shutdown Mode ISD Pin 1 = VDD (see Figure 32), −40°C ≤ TA ≤ +85°C 0.1 1 μA
AUDIO PERFORMANCE
Total Harmonic Distortion THD + N P = 0.35 W into 8 Ω, f = 1 kHz 0.1 %
SSM2211
Rev. E | Page 4 of 24
VDD = 2.7 V, TA = 25°C, RL = 8 Ω, CB = 0.1 µF, VCM = VDD/2, unless otherwise noted.
Table 3.
Parameter Symbol Conditions Min Typ Max Unit
GENERAL CHARACTERISTICS
Differential Output Offset Voltage VOOS AVD = 2 5 50 mV
Output Impedance ZOUT 0.1 Ω
SHUTDOWN CONTROL
Input Voltage High VIH ISY = <100 mA 1.5 V
Input Voltage Low VIL ISY = normal 0.8 V
POWER SUPPLY
Supply Current ISY VOUTA = VOUTB = 1.35 V, −40°C ≤ TA ≤ +85°C 4.2 20 mA
Supply Current, Shutdown Mode ISD Pin 1 = VDD (see Figure 32), −40°C ≤ TA ≤ +85°C 0.1 1 μA
AUDIO PERFORMANCE
Total Harmonic Distortion THD + N P = 0.25 W into 8 Ω, f = 1 kHz 0.1 %
SSM2211
Rev. E | Page 5 of 24
ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
Absolute maximum ratings apply at TA = 25°C, unless
otherwise noted. θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 4.
Parameter Rating
Supply Voltage 6 V
Input Voltage VDD
Common-Mode Input Voltage VDD
ESD Susceptibility 2000 V
Storage Temperature Range −65°C to +150°C
Operating Temperature Range −40°C to +85°C
Junction Temperature Range −65°C to +165°C
Lead Temperature, Soldering (60 sec) 300°C
Table 5. Thermal Resistance
Package Type θJA Unit
8-Lead LFCSP_VD (CP-Suffix)1 50 °C/W
8-Lead SOIC_N (S-Suffix)2 121 °C/W
1 For the LFCSP_VD, θJA is measured with exposed lead frame soldered to the PCB.
2 For the SOIC_N, θJA is measured with the device soldered to a four-layer PCB.
ESD CAUTION
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
SSM2211
Rev. E | Page 6 of 24
PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS
00358-002
SHUTDOWN
1
BYPASS
2
IN+
3
IN–
4
V
OUT
B
8
V–
7
V+
6
V
OUT
A
5
SSM2211
TOP VIEW
(Not to Scale)
1SHUTDOWN
2BYPASS
3IN+
4IN–
7V–
8V
OUT
B
6V+
5V
OUT
A
00358-003
PIN 1
INDICATOR
TOP VIEW
(Not to Scale)
SSM2211
Figure 2. 8-Lead SOIC_N Pin Configuration (R-8) Figure 3. 8-Lead LFCSP_VD Pin Configuration (CP-8-2)
Table 6. Pin Function Descriptions
Pin No. Mnemonic Description
1 SHUTDOWN Shutdown Enable.
2 BYPASS Bypass Capacitor.
3 IN+ Noninverting Input.
4 IN− Inverting Input.
5 VOUTA Output A.
6 V+ Positive Supply.
7 V− Negative Supply.
8 VOUTB Output B.
SSM2211
Rev. E | Page 7 of 24
TYPICAL PERFORMANCE CHARACTERISTICS
FREQUENCY (Hz)
THD + N (%)
10
1
0.0120 100 20k
1k 10k
0.1
C
B
= 0
C
B
= 0.1μF
C
B
= 1μF
T
A
= 25°C
V
DD
= 5V
A
VD
= 2 (BTL)
R
L
= 8Ω
P
L
= 500mW
00358-004
Figure 4. THD + N vs. Frequency
FREQUENCY (Hz)
THD + N (%)
10
1
0.0120 100 20k
1k 10k
0.1
C
B
= 0
C
B
= 0.1μF
C
B
= 1μF
T
A
= 25°C
V
DD
= 5V
A
VD
= 10 (BTL)
R
L
= 8Ω
P
L
= 500mW
00358-005
Figure 5. THD + N vs. Frequency
FREQUENCY (Hz)
THD + N (%)
10
1
0.01
20 100 20k
1k 10k
0.1
C
B
= 0.1μF
C
B
= 1μF
T
A
= 25°C
V
DD
= 5V
A
VD
= 20 (BTL)
R
L
= 8Ω
P
L
= 500mW
00358-006
Figure 6. THD + N vs. Frequency
FREQUENCY (Hz)
THD + N (%)
10
1
0.01
20 100 20k
1k 10k
0.1
CB = 0
CB = 0.1μF
CB = 1μF
TA = 25°C
VDD = 5V
AVD = 2 (BTL)
RL = 8Ω
PL = 1W
00358-007
Figure 7. THD + N vs. Frequency
FREQUENCY (Hz)
THD + N (%)
10
1
0.01
20 100 20k
1k 10k
0.1
CB = 0
CB = 0.1μF
CB = 1μF
TA = 25°C
VDD = 5V
AVD = 10 (BTL)
RL = 8Ω
PL = 1W
00358-008
Figure 8. THD + N vs. Frequency
FREQUENCY (Hz)
THD + N (%)
10
1
0.01 20 100 20k
1k 10k
0.1
CB = 0.1μF
CB = 1μF
TA = 25°C
VDD = 5V
AVD = 20 (BTL)
RL = 8Ω
PL = 1W
00358-009
Figure 9. THD + N vs. Frequency
SSM2211
Rev. E | Page 8 of 24
P
OUTPUT
(W)
THD + N (%)
10
1
0.0120n 0.1 2
0.1
1
T
A
= 25°C
V
DD
= 5V
A
VD
= 2 (BTL)
R
L
= 8Ω
FREQUENCY = 20Hz
C
B
= 0.1μF
00358-010
Figure 10. THD + N vs. POUTPUT
P
OUTPUT
(W)
THD + N (%)
10
1
0.0120n 0.1 2
0.1
1
T
A
= 25°C
V
DD
= 5V
A
VD
= 2 (BTL)
R
L
= 8Ω
FREQUENCY = 1kHz
C
B
= 0.1μF
00358-011
Figure 11. THD + N vs. POUTPUT
P
OUTPUT
(W)
THD + N (%)
10
1
0.01
20n 0.1 2
0.1
1
T
A
= 25°C
V
DD
= 5V
A
VD
= 2 (BTL)
R
L
= 8Ω
FREQUENCY = 20kHz
C
B
= 0.1μF
00358-012
Figure 12. THD + N vs. POUTPUT
FREQUENCY (Hz)
THD + N (%)
10
1
0.0120 100 20k
1k 10k
0.1
C
B
= 0
C
B
= 0.1μF
C
B
= 1μF
T
A
= 25°C
V
DD
= 3.3V
A
VD
= 2 (BTL)
R
L
= 8Ω
P
L
= 350mW
00358-013
Figure 13. THD + N vs. Frequency
FREQUENCY (Hz)
THD + N (%)
10
1
0.01
20 100 20k
1k 10k
0.1
C
B
= 0
C
B
= 0.1μF
C
B
= 1μF
T
A
= 25°C
V
DD
= 3.3V
A
VD
= 10 (BTL)
R
L
= 8Ω
P
L
= 350mW
00358-014
Figure 14. THD + N vs. Frequency
FREQUENCY (Hz)
THD + N (%)
10
1
0.01
20 100 20k
1k 10k
0.1
C
B
= 0.1μF
C
B
= 1μF
T
A
= 25°C
V
DD
= 3.3V
A
VD
= 20 (BTL)
R
L
= 8Ω
P
L
= 350mW
00358-015
Figure 15. THD + N vs. Frequency
SSM2211
Rev. E | Page 9 of 24
P
OUTPUT
(W)
THD + N (%)
10
1
0.01
20n 0.1 2
0.1
1
T
A
= 25°C
V
DD
= 3.3V
A
VD
= 2 (BTL)
R
L
= 8Ω
FREQUENCY = 20Hz
C
B
= 0.1μF
00358-016
Figure 16. THD + N vs. POUTPUT
P
OUTPUT
(W)
THD + N (%)
10
1
0.0120n 0.1 2
0.1
1
T
A
= 25°C
V
DD
= 3.3V
A
VD
= 2 (BTL)
R
L
= 8Ω
FREQUENCY = 1kHz
C
B
= 0.1μF
00358-017
Figure 17. THD + N vs. POUTPUT
P
OUTPUT
(W)
THD + N (%)
10
1
0.01
20n 0.1 2
0.1
1
T
A
= 25°C
V
DD
= 3.3V
A
VD
= 2 (BTL)
R
L
= 8Ω
FREQUENCY = 20kHz
C
B
= 0.1μF
00358-018
Figure 18. THD + N vs. POUTPUT
FREQUENCY (Hz)
THD + N (%)
10
1
0.01
20 100 20k
1k 10k
0.1
C
B
= 0
C
B
= 0.1μF
C
B
= 1μF
T
A
= 25°C
V
DD
= 2.7V
A
VD
= 2 (BTL)
R
L
= 8Ω
P
L
= 250mW
00358-019
Figure 19. THD + N vs. Frequency
FREQUENCY (Hz)
THD + N (%)
10
1
0.01
20 100 20k
1k 10k
0.1
C
B
= 0
C
B
= 0.1μF
C
B
= 1μF
T
A
= 25°C
V
DD
= 2.7V
A
VD
= 10 (BTL)
R
L
= 8Ω
P
L
= 250mW
00358-020
Figure 20. THD + N vs. Frequency
FREQUENCY (Hz)
THD + N (%)
10
1
0.01
20 100 20k
1k 10k
0.1
C
B
= 0.1μF
C
B
= 1μF
T
A
= 25°C
V
DD
= 2.7V
A
VD
= 20 (BTL)
R
L
= 8Ω
P
L
= 250mW
00358-021
Figure 21. THD + N vs. Frequency
SSM2211
Rev. E | Page 10 of 24
P
OUTPUT
(W)
THD + N (%)
10
1
0.01
20n 0.1 2
0.1
1
T
A
= 25°C
V
DD
= 2.7V
A
VD
= 2 (BTL)
R
L
= 8Ω
FREQUENCY = 20Hz
00358-022
Figure 22. THD + N vs. POUTPUT
P
OUTPUT
(W)
THD + N (%)
10
1
0.01
20n 0.1 2
0.1
1
T
A
= 25°C
V
DD
= 2.7V
A
VD
= 2 (BTL)
R
L
= 8Ω
FREQUENCY = 1kHz
00358-023
Figure 23. THD + N vs. POUTPUT
P
OUTPUT
(W)
THD + N (%)
10
1
0.01
20n 0.1 2
0.1
1
T
A
= 25°C
V
DD
= 2.7V
A
VD
= 2 (BTL)
R
L
= 8Ω
FREQUENCY = 20kHz
00358-024
Figure 24. THD + N vs. POUTPUT
FREQUENCY (Hz)
THD + N (%)
10
1
0.01
20 100 20k
1k 10k
0.1
R
L
= 32Ω
P
O
= 60mW
R
L
= 8Ω
P
O
= 250mW
T
A
= 25°C
V
DD
= 5V
A
VD
= 10 SINGLE ENDED
C
B
= 0.1μF
C
C
= 1000μF
00358-025
Figure 25. THD + N vs. Frequency
FREQUENCY (Hz)
THD + N (%)
10
1
0.01
20 100 20k
1k 10k
0.1
R
L
= 32Ω
P
O
= 20mW
R
L
= 8Ω
P
O
= 85mW
T
A
= 25°C
V
DD
= 3.3V
A
VD
= 10 SINGLE ENDED
C
B
= 0.1μF
C
C
= 1000μF
00358-026
Figure 26. THD + N vs. Frequency
FREQUENCY (Hz)
THD + N (%)
10
1
0.01
20 100 20k
1k 10k
0.1
R
L
= 32Ω
P
O
= 15mW
R
L
= 8Ω
P
O
= 65mW
T
A
= 25°C
V
DD
= 2.7V
A
VD
= 10 SINGLE ENDED
C
B
= 0.1μF
C
C
= 1000μF
00358-027
Figure 27. THD + N vs. Frequency
SSM2211
Rev. E | Page 11 of 24
P
OUTPUT
(W)
THD + N (%)
10
1
0.01
20n 0.1 2
0.1
1
T
A
= 25°C
A
VD
= 2 (BTL)
R
L
= 8Ω
FREQUENCY = 20Hz
C
B
= 0.1μF
V
DD
= 2.7V
V
DD
= 5V
V
DD
= 3.3V
00358-028
Figure 28. THD + N vs. POUTPUT
P
OUTPUT
(W)
THD + N (%)
10
1
0.01
20n 0.1 2
0.1
1
T
A
= 25°C
A
VD
= 2 (BTL)
R
L
= 8Ω
FREQUENCY = 1kHz
C
B
= 0.1μF
V
DD
= 2.7V
V
DD
= 5V
V
DD
= 3.3V
00358-029
Figure 29. THD + N vs. POUTPUT
P
OUTPUT
(W)
THD + N (%)
10
1
0.01
20n 0.1 2
0.1
1
V
DD
= 2.7V
V
DD
= 5V
V
DD
= 3.3V
T
A
= 25°C
A
VD
= 2 (BTL)
R
L
= 8Ω
FREQUENCY = 20kHz
C
B
= 0.1μF
00358-030
Figure 30. THD + N vs. POUTPUT
AMBIENT TEMPERATURE (°C)
MAXIMUM POWER DISSIPATION (W)
00358-031
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
–40 –30 –20 –10 0 10 30 7020 40 50 60 9080 110100 120
T
J,MAX
= 150°C
FREE AIR, NO HEAT SINK
SOIC θ
JA
= 121°C/W
LFCSP θ
JA
= 50°C/W
8-LEAD SOIC
8-LEAD LFCSP
Figure 31. Maximum Power Dissipation vs. Ambient Temperature
SHUTDOWN VOLTAGE AT PIN 1 (V)
SUPPLY CURRENT (µ
A
)
10k
8k
005
1234
6k
4k
2k
T
A
= 25°C
V
DD
= 5V
00358-032
Figure 32. Supply Current vs. Shutdown Voltage at Pin 1
SUPPLY VOLTAGE (V)
SUPPLY CURRENT (mA)
14
0
01 6
2345
12
10
8
4
2
6
T
A
= 25
°
C
R
L
= OPEN
00358-033
Figure 33. Supply Current vs. Supply Voltage
SSM2211
Rev. E | Page 12 of 24
LOAD RESISTANCE (Ω)
OUTPUT POWER (W)
1.6
0.6
0
48 4812 16 20 24 28 32 36 40 44
1.4
0.8
0.4
0.2
1.2
1.0
5V
3.3V
2.7V
00358-034
Figure 34. POUTPUT vs. Load Resistance
FREQUENCY (Hz)
GAIN (dB)
80
–60
–80
–40
–20
0
20
40
60
100 1k 100M
10k 100k 1M 10M
PHASE SHIFT (Degrees)
180
–135
–180
–90
–45
0
45
90
135
00358-035
Figure 35. Gain and Phase Shift vs. Frequency (Single Amplifier)
OUTPUT OFFSET VOLTAGE (mV)
NUMBER OF UNITS
25
20
0
–20 –15 25–10 –5 0 10 15 205
15
10
5
V
DD
= 2.7V
SAMPLE SIZE = 300
00358-036
Figure 36. Output Offset Voltage Distribution
OUTPUT OFFSET VOLTAGE (mV)
NUMBER OF UNITS
20
16
0
–30 –20 30–10 0 10 20
12
8
4
V
DD
= 3.3V
SAMPLE SIZE = 300
00358-037
Figure 37. Output Offset Voltage Distribution
SSM2211
Rev. E | Page 13 of 24
OUTPUT OFFSET VOLTAGE (mV)
20
16
0–30 –20 30
–10 0 10 20
12
8
4
VDD = 3.3V
SAMPLE SIZE = 300
NUMBER OF UNITS
V
DD
= 5V
SAMPLE SIZE = 300
00358-038
Figure 38. Output Offset Voltage Distribution
SUPPLY CURRENT (mA)
NUMBER OF UNITS
600
300
06 7 8 9 10 11 12 13 14 15
500
400
200
100
V
DD
= 5V
SAMPLE SIZE = 1,700
00358-039
Figure 39. Supply Current Distribution
FREQUENCY (Hz)
PSRR (dB)
–70
20 100 30k1k 10k
T
A
= 25
°
C
V
DD
= 5V
±
100mV
C
B
= 15
μ
F
A
VD
= 2
–65
–60
–55
–50
00358-040
Figure 40. PSRR vs. Frequency
SSM2211
Rev. E | Page 14 of 24
PRODUCT OVERVIEW
The SSM2211 is a low distortion speaker amplifier that can run
from a 2.7 V to 5.5 V supply. It consists of a rail-to-rail input
and a differential output that can be driven within 400 mV of
either supply rail while supplying a sustained output current of
350 mA. The SSM2211 is unity-gain stable, requiring no
external compensation capacitors, and can be configured for
gains of up to 40 dB. Figure 41 shows the simplified schematic.
4
3
SHUTDOWN
V
OUT
A
V+
A2
A1
2
IN– 20kΩ
20k
Ω
50kΩ
0.1µF
7
8
5
6
SSM2211
50kΩ
50kΩ
50kΩ
V
OUT
B
BIAS
CONTROL
00358-041
1
Figure 41. Simplified Schematic
Pin 4 and Pin 3 are the inverting and noninverting terminals
to A1. An offset voltage is provided at Pin 2, which should be
connected to Pin 3 for use in single-supply applications. The
output of A1 appears at Pin 5. A second operational amplifier,
A2, is configured with a fixed gain of AV = −1 and produces an
inverted replica of Pin 5 at Pin 8. The SSM2211 outputs at Pin 5
and Pin 8 produce a bridged configuration output to which a
speaker can be connected. This bridge configuration offers the
advantage of a more efficient power transfer from the input to
the speaker. Because both outputs are symmetric, the dc bias at
Pin 5 and Pin 8 are exactly equal, resulting in zero dc differential
voltage across the outputs. This eliminates the need for a coupling
capacitor at the output.
THERMAL PERFORMANCE—LFCSP
The LFCSP offers the SSM2211 user even greater choices when
considering thermal performance criteria. For the 8-lead,
3 mm × 3 mm LFCSP, the θJA is 50°C/W. This is a significant
performance improvement over most other packaging options.
SSM2211
Rev. E | Page 15 of 24
TYPICAL APPLICATIONS
SSM2211
A
UDIO
INPUT SPEAKER
8V
R
F
C
S
5V
2
7
18
5
6
4
3
–
+
C
C
R
I
C
B
–
+
00358-042
Figure 42. Typical Configuration
Figure 42 shows how the SSM2211 is connected in a typical
application. The SSM2211 can be configured for gain much like
a standard operational amplifier. The gain from the audio input
to the speaker is
I
F
VR
R
A×= 2 (1)
The 2× factor results from Pin 8 having an opposite polarity of
Pin 5, providing twice the voltage swing to the speaker from the
bridged-output (BTL) configuration.
CS is a supply bypass capacitor used to provide power supply
filtering. Pin 2 is connected to Pin 3 to provide an offset voltage
for single-supply use, with CB providing a low ac impedance to
ground to enhance power-supply rejection. Because Pin 4 is a
virtual ac ground, the input impedance is equal to RI. CC is the
input coupling capacitor, which also creates a high-pass filter
with a corner frequency of
C
I
HP CR
f×π
=2
1 (2)
Because the SSM2211 has an excellent phase margin, a feedback
capacitor in parallel with RF to band limit the amplifier is not
required, as it is in some competitor products.
BRIDGED OUTPUT VS. SINGLE-ENDED OUTPUT
CONFIGURATIONS
The power delivered to a load with a sinusoidal signal can be
expressed in terms of the peak voltage of the signal and the
resistance of the load as
L
PK
LR
V
P×
=2
2 (3)
By driving a load from a BTL configuration, the voltage swing
across the load doubles. Therefore, an advantage in using a BTL
configuration becomes apparent from Equation 3, as doubling
the peak voltage results in four times the power delivered to the
load. In a typical application operating from a 5 V supply, the
maximum power that can be delivered by the SSM2211 to an
8 Ω speaker in a single-ended configuration is 250 mW. By
driving this speaker with a bridged output, 1 W of power can be
delivered. This translates to a 12 dB increase in sound pressure
level from the speaker.
Driving a speaker differentially from a BTL offers another
advantage in that it eliminates the need for an output coupling
capacitor to the load. In a single-supply application, the quiescent
voltage at the output is half of the supply voltage. If a speaker is
connected in a single-ended configuration, a coupling capacitor
is needed to prevent dc current from flowing through the speaker.
This capacitor also needs to be large enough to prevent low
frequency roll-off. The corner frequency is given by
C
LCR
f×
=
−π2
1
dB3 (4)
where RL is the speaker resistance and CC is the coupling
capacitance.
For an 8 Ω speaker and a corner frequency of 20 Hz, a 1000 µF
capacitor is needed, which is physically large and costly. By
connecting a speaker in a BTL configuration, the quiescent
differential voltage across the speaker becomes nearly zero,
eliminating the need for the coupling capacitor.
SPEAKER EFFICIENCY AND LOUDNESS
The effective loudness of 1 W of power delivered into an 8 Ω
speaker is a function of speaker efficiency. The efficiency is
typically rated as the sound pressure level (SPL) at 1 meter in
front of the speaker with 1 W of power applied to the speaker.
Most speakers are between 85 dB and 95 dB SPL at 1 meter at
1 W. Table 7 shows a comparison of the relative loudness of
different sounds.
Table 7. Typical Sound Pressure Levels
Source of Sound SPL (dB)
Threshold of Pain 120
Heavy Street Traffic 95
Cabin of Jet Aircraft 80
Average Conversation 65
Average Home at Night 50
Quiet Recording Studio 30
Threshold of Hearing 0
Consequently, Table 7 demonstrates that 1 W of power into a
speaker can produce quite a bit of acoustic energy.
SSM2211
Rev. E | Page 16 of 24
POWER DISSIPATION
Another important advantage in using a BTL configuration is
the fact that bridged-output amplifiers are more efficient than
single-ended amplifiers in delivering power to a load. Efficiency
is defined as the ratio of the power from the power supply to the
power delivered to the load
SY
L
P
P
=η
An amplifier with a higher efficiency has less internal power
dissipation, which results in a lower die-to-case junction
temperature compared with an amplifier that is less efficient.
This is important when considering the amplifier maximum
power dissipation rating vs. ambient temperature. An internal
power dissipation vs. output power equation can be derived to
fully understand this.
The internal power dissipation of the amplifier is the internal
voltage drop multiplied by the average value of the supply
current. An easier way to find internal power dissipation is to
measure the difference between the power delivered by the
supply voltage source and the power delivered into the load.
The waveform of the supply current for a bridged-output
amplifier is shown in Figure 43.
T
T
00358-043
V
OUT
V
PEAK
I
SY
I
DD, PEAK
TIME
I
DD, AVG
TIME
Figure 43. Bridged Amplifier Output Voltage and Supply Current vs. Time
By integrating the supply current over a period, T, and then
dividing the result by T, the IDD,AVG can be found. Expressed in
terms of peak output voltage and load resistance
L
PEAK
AVGDD R
V
Iπ
2
,= (5)
Therefore, power delivered by the supply, neglecting the bias
current for the device, is
L
PEAK
DD
SY R
VV
Pπ
×
=2 (6)
The power dissipated internally by the amplifier is simply the
difference between Equation 6 and Equation 3. The equation
for internal power dissipated, PDISS, expressed in terms of power
delivered to the load and load resistance, is
LL
L
DD
DISS PP
R
V
P−×
π
=22 (7)
The graph of this equation is shown in Figure 44.
OUTPUT POWER (W)
1.5
00 1.5
POWER DISSIPATION (W)
0.5 1.0
1.0
0.5
V
DD
= 5V
R
L
= 4Ω
R
L
= 8Ω
R
L
= 16Ω
00358-044
Figure 44. Power Dissipation vs. Output Power with VDD = 5 V
Because the efficiency of a bridged-output amplifier (Equation 3
divided by Equation 6) increases with the square root of PL, the
power dissipated internally by the device stays relatively flat and
actually decreases with higher output power. The maximum
power dissipation of the device can be found by differentiating
Equation 7 with respect to load power and setting the derivative
equal to zero. This yields
01
1
2=−×
π
=
∂
∂
LL
DD
L
DISS
PR
V
P
P (8)
and occurs when
L
DD
MAXDISS R
V
P2
2
,π
2
= (9)
Using Equation 9 and the power derating curve in Figure 31,
the maximum ambient temperature can be found easily. This
ensures that the SSM2211 does not exceed its maximum
junction temperature of 150°C. The power dissipation for a
single-ended output application where the load is capacitively
coupled is given by
LL
L
DD
DISS PP
R
V
P−×
π
=22 (10)
The graph of Equation 10 is shown in Figure 45.
SSM2211
Rev. E | Page 17 of 24
OUTPUT POWER (W)
0.35
0.30
0
0 0.40.1
POWER DISSIPATION (W)
0.2 0.3
0.20
0.15
0.10
0.05
0.25
V
DD
= 5V R
L
= 4Ω
R
L
= 8Ω
R
L
= 16Ω
00358-045
Figure 45. Power Dissipation vs. Single-Ended Output Power
with VDD = 5 V
The maximum power dissipation for a single-ended output is
L
DD
MAXDISS R
V
P2
2
,π2
= (11)
OUTPUT VOLTAGE HEADROOM
The outputs of both amplifiers in the SSM2211 can come within
400 mV of either supply rail while driving an 8 Ω load. As
compared with equivalent competitor products, the SSM2211
has a higher output voltage headroom. This means that the
SSM2211 can deliver an equivalent maximum output power
while running from a lower supply voltage. By running at a lower
supply voltage, the internal power dissipation of the device is
reduced, as shown in Equation 9. This extended output
headroom, along with the LFCSP, allows the SSM2211 to
operate in higher ambient temperatures than competitor
devices.
The SSM2211 is also capable of providing amplification even at
supply voltages as low as 2.7 V. The maximum power available at
the output is a function of the supply voltage. Therefore, as the
supply voltage decreases, so does the maximum power output
from the device. The maximum output power vs. supply voltage
at various BTL resistances is shown in Figure 46. The maximum
output power is defined as the point at which the output has 1%
total harmonic distortion (THD + N).
To find the minimum supply voltage needed to achieve a
specified maximum undistorted output power use Figure 46.
For example, an application requires only 500 mW to be output
for an 8 Ω speaker. With the speaker connected in a bridged-
output configuration, the minimum supply voltage required
is 3.3 V.
SUPPLY VOLTAGE (V)
01.5 5.02.0
MAX P
OUT
@ 1% THD (W)
2.5 3.0 3.5 4.0 4.5
1.6
1.0
0.8
0.4
0.2
1.4
1.2
0.6
R
L
= 4Ω
R
L
= 8Ω
R
L
= 16Ω
00358-046
Figure 46. Maximum Output Power vs. VSY
Shutdown Feature
The SSM2211 can be put into a low power consumption shut-
down mode by connecting Pin 1 to 5 V. In shutdown mode,
the SSM2211 has an extremely low supply current of less than
10 nA. This makes the SSM2211 ideal for battery-powered
applications.
Connect Pin 1 to ground for normal operation. Connecting Pin 1
to VDD mutes the outputs and puts the device into shutdown
mode. A pull-up or pull-down resistor is not required. Pin 1
should always be connected to a fixed potential, either VDD or
ground, and never be left floating. Leaving Pin 1 unconnected
can produce unpredictable results.
AUTOMATIC SHUTDOWN-SENSING CIRCUIT
Figure 47 shows a circuit that can be used to take the SSM2211
in and out of shutdown mode automatically. This circuit can
be set to turn the SSM2211 on when an input signal of a certain
amplitude is detected. The circuit also puts the device into low
power shutdown mode if an input signal is not sensed within
a certain amount of time. This can be useful in a variety of
portable radio applications, where power conservation is critical.
00358-047
NOTES
1. ADDITIONAL PINS OMITTED FOR CLARITY.
SSM2211
IN–
V
DD
C2
R5
R6
R1 R3
R2
D1
C1
R4
R7
4
V
DD
1
5
R8
A1
V
DD
8
V
OUT
A
V
OUT
B
–
+
AD8500
Figure 47. Automatic Shutdown Circuit
SSM2211
Rev. E | Page 18 of 24
The input signal to the SSM2211 is also connected to the non-
inverting terminal of A2. R1, R2, and R3 set the threshold
voltage at which the SSM2211 is to be taken out of shutdown
mode. The diode, D1, half-wave rectifies the output of A2,
discharging C1 to ground when an input signal greater than the
set threshold voltage is detected. R4 controls the charge time of
C1, which sets the time until the SSM2211 is put back into
shutdown mode after the input signal is no longer detected.
R5 and R6 are used to establish a voltage reference point equal
to half of the supply voltage. R7 and R8 set the gain of the
SSM2211. A 1N914 or equivalent diode is required for D1, and
A2 must be a rail-to-rail output amplifier, such as AD8500 or
equivalent. This ensures that C1 discharges sufficiently to bring
the SSM2211 out of shutdown mode.
To find the appropriate component values, the gain of A2 must
be determined by
THS
SY
MINV, V
V
A= (12)
where:
VSY is the single supply voltage.
VTHS is the threshold voltage.
AV must be set to a minimum of 2 for the circuit to work
properly.
Next, choose R1 and set R2 to
⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛−=
V
A
R1R2 2
1 (13)
Find R3 as
()
(14) 1−
+
×
=V
A
R2R2
R2R1
R3
C1 can be arbitrarily set but should be small enough to prevent
A2 from becoming capacitively overloaded. R4 and C1 control
the shutdown rate. To prevent intermittent shutdown with low
frequency input signals, the minimum time constant must be
LO
W
f
C1R4 10
≥× (15)
where fLOW is the lowest input frequency expected.
SHUTDOWN-CIRCUIT DESIGN EXAMPLE
In this example, a portable radio application requires the SSM2211
to be turned on when an input signal greater than 50 mV is
detected. The device needs to return to shutdown mode within
500 ms after the input signal is no longer detected. The lowest
frequency of interest is 200 Hz, and a 5 V supply is used.
The minimum gain of the shutdown circuit, from Equation 12, is
AV = 100. R1 is set to 100 kΩ. Using Equation 13 and Equation 14,
R2 = 98 kΩ and R3 = 4.9 MΩ. C1 is set to 0.01 µF, and based on
Equation 15, R4 is set to 10 MΩ. To minimize power supply
current, R5 and R6 are set to 10 MΩ. The previous procedure
provides an adequate starting point for the shutdown circuit.
Some component values may need to be adjusted empirically to
optimize performance.
START-UP POPPING NOISE
During power-up or release from shutdown mode, the midrail
bypass capacitor, CB, determines the rate at which the SSM2211
starts up. By adjusting the charging time constant of CB, the start-
up pop noise can be pushed into the subaudible range, greatly
reducing start-up popping noise. On power-up, the midrail
bypass capacitor is charged through an effective resistance of
25 kΩ. To minimize start-up popping, the charging time constant
for CB needs to be greater than the charging time constant for
the input coupling capacitor, CC.
CB × 25 kΩ > CC × R1 (16)
For an application where R1 = 10 kΩ and CC = 0.22 µF, CB must
be at least 0.1 µF to minimize start-up popping noise.
SSM2211 Amplifier Design Example
Maximum output power: 1 W
Input impedance: 20 kΩ
Load impedance: 8 Ω
Input level: 1 V rms
Bandwidth: 20 Hz − 20 kHz ± 0.25 dB
The configuration shown in Figure 42 is used. The first thing to
determine is the minimum supply rail necessary to obtain the
specified maximum output power. From Figure 46, for 1 W of
output power into an 8 Ω load, the supply voltage must be at
least 4.6 V. A supply rail of 5 V can be easily obtained from a
SSM2211
Rev. E | Page 19 of 24
voltage reference. The extra supply voltage also allows the
SSM2211 to reproduce peaks in excess of 1 W without clipping
the signal. With VDD = 5 V and RL = 8 Ω, Equation 9 shows that
the maximum power dissipation for the SSM2211 is 633 mW.
From the power derating curve in Figure 31, the ambient
temperature must be less than 50°C for the SOIC and 121°C for
the LFCSP.
The required gain of the amplifier can be determined from
Equation 17 as
8.2=
×
=
rmsIN,
LL
VV
RP
A (17)
From Equation 1
2
V
I
FA
R
R=
or RF = 1.4 × RI. Because the desired input impedance is 20 kΩ,
RI = 20 kΩ and R2 = 28 kΩ.
The final design step is to select the input capacitor. When
adding an input capacitor, CC, to create a high-pass filter, the
corner frequency needs to be far enough away for the design to
meet the bandwidth criteria. For a first-order filter to achieve a
pass-band response within 0.25 dB, the corner frequency must
be at least 4.14× away from the pass-band frequency. Therefore,
(4.14 × fHP) < 20 Hz. Using Equation 2, the minimum size of an
input capacitor can be found.
⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛
×
>
144
Hz20
k20π2
1
.
CC (18)
Therefore, CC > 1.65 µF. Using a 2.2 µF is a practical choice for CC.
The gain bandwidth product for each internal amplifier in the
SSM2211 is 4 MHz. Because 4 MHz is much greater than 4.14 ×
20 kHz, the design meets the upper frequency bandwidth criteria.
The SSM2211 can also be configured for higher differential
gains without running into bandwidth limitations. Equation 16
shows an appropriate value for CB to reduce start-up popping
noise.
(
)
(
)
F761
k25
k20F22 .
.
CB=> (19)
Selecting CB to be 2.2 µF for a practical value of capacitor
minimizes start-up popping noise.
To summarize the final design
VDD = 5 V
R1 = 20 kΩ
RF = 28 kΩ
C
SINGLE-ENDED APPLICATIONS
There are applications in which driving a speaker differentially
is not practical, for example, a pair of stereo speakers where the
negative terminal of both speakers is connected to ground.
Figure 48 shows how this can be accomplished.
SSM2211
5V
2
7
18
5
6
4
3
0.47μF
470μF+
–
+
–
10kΩ
10kΩ
250mW
SPEAKER
(8Ω)
AUDIO
INPUT
0.1μF
00358-048
SSM2211
5V
2
7
18
5
6
4
3
0.47μF
470μF+
–
+
–
10kΩ
10kΩ
250mW
SPEAKER
(8Ω)
AUDIO
INPUT
0.1μF
00358-048
Figure 48. Single-Ended Output Application
It is not necessary to connect a dummy load to the unused
output to help stabilize the output. The 470 µF coupling capa-
citor creates a high-pass frequency cutoff of 42 Hz, as given in
Equation 4, which is acceptable for most computer speaker
applications. The overall gain for a single-ended output config-
uration is AV = RF/R1, which for this example is equal to 1.
DRIVING TWO SPEAKERS SINGLE ENDEDLY
It is possible to drive two speakers single endedly with both
outputs of the SSM2211.
SSM2211
5V
2
7
18
5
6
4
3
1μF
470μF+
–
+
–
20kΩ
20kΩ
RIGHT
SPEAKER
(8Ω)
A
UDIO
INPUT
0.1μF
00358-049
470μF
+
–
LEFT
SPEAKER
(8Ω)
Figure 49. SSM2211 Used as a Dual-Speaker Amplifier
Each speaker is driven by a single-ended output. The trade-off
is that only 250 mW of sustained power can be put into each
speaker. In addition, a coupling capacitor must be connected in
series with each of the speakers to prevent large dc currents
from flowing through the 8 Ω speakers. These coupling
capacitors produce a high-pass filter with a corner frequency
given by Equation 4. For a speaker load of 8 Ω and a coupling
capacitor of 470 µF, this results in a −3 dB frequency of 42 Hz.
Because the power of a single-ended output is one-quarter that
of a BTL, both speakers together are still half as loud (−6 dB
SPL) as a single speaker driven with a BTL.
C = 2.2 µF
CB = 2.2 µF
TA, MAX = 85°C
SSM2211
Rev. E | Page 20 of 24
Recall that
The polarity of the speakers is important because each output is
180° out of phase with the other. By connecting the negative
terminal of Speaker 1 to Pin 5 and the positive terminal of
Speaker 2 to Pin 8, proper speaker phase can be established.
RPV ×=
Therefore, for POUT = 1 W and RL = 8 Ω, V = 2.8 V rms or
8 V pp. If the available input signal is 1.4 V rms or more, use
the PCB as is, with RF = RI = 20 kΩ. If more gain is needed,
increase the value of RF.
The maximum power dissipation of the device, assuming both
loads are equal, can be found by doubling Equation 11. If the
loads are different, use Equation 11 to find the power dissipa-
tion caused by each load, and then take the sum to find the total
power dissipated by the SSM2211. When the closed-loop gain required by your source level is
determined, it can develop 1 W across the 8 Ω load resistor with
the normal input signal level, replace the resistor with a speaker.
The speaker can be connected across the VOUTA and VOUTB posts
for bridged-mode operation only after the 8 Ω load resistor is
removed. For no phase inversion, VOUTB must be connected to
the positive (+) terminal of the speaker.
EVALUATION BOARD
An evaluation board for the SSM2211 is available. For more
information, call 1-800-ANALOGD.
V
+
8
4
SSM2211
5
3
2
1
V
OUT
B
6J1
J2
C1
0.1µF
7
C
IN
1µF
CW
ON
SHUTDOWN
R1
51kΩ
+
+
R
I
20kΩ
R
F
20kΩ
V
OUT
A
R
L
1W 8Ω
VOLUME
20kΩ POT.
AUDIO
INPUT
C1
0.1µF
C2
10µF
0
0358-050
8
SSM2211
5
V
OUT
B
V
OUT
A
GND
CH A
CH B
PROBES
CH B
INV. ON
DISPLAY
A+B
OSCILLOSCOPE
2.5V
COMMON
MODE
8Ω
1W
00358-051
Figure 51. Using an Oscilloscope to Display the Bridged-Output Voltage
Figure 50. Evaluation Board Schematic
The voltage gain of the SSM2211 is given by Equation 20.
I
F
VR
R
A×= 2 (20)
To use the SSM2211 in a single-ended-output configuration,
replace J1 and J2 jumpers with electrolytic capacitors of a suitable
value, with the negative terminals to the output Terminal VOUTA
and Terminal VOUTB. The single-ended loads can then be returned
to ground. Note that the maximum output power is reduced to
250 mW (one-quarter of the rated maximum), due to the maxi-
mum swing in the nonbridged mode being one-half and power
being proportional to the square of the voltage. For frequency
response down to 3 dB at 100 Hz, a 200 µF capacitor is required
with 8 Ω speakers.
If desired, the input signal can be attenuated by turning the
10 kΩ potentiometer in the CW (clockwise) direction. CIN
isolates the input common-mode voltage (VDD/2) present at
Pin 2 and Pin 3. With V+ = 5 V, there is a 2.5 V common-mode
voltage present at both output terminals, VOUTA and VOUTB, as well.
The SSM2211 evaluation board also comes with a shutdown
switch, which allows the user to switch between on (normal
operation) and the power-conserving shutdown mode.
LFCSP PCB CONSIDERATIONS
Caution: The ground lead of the oscilloscope probe, or any
other instrument used to measure the output signal, must not
be connected to either output because this shorts out one of the
amplifier outputs and may damage the device.
The LFCSP is a plastic encapsulated package with a copper lead
frame substrate. This is a leadless package with solder lands on
the bottom surface of the package, instead of conventional
formed perimeter leads. A key feature that allows the user to
reach the quoted θJA performance is the exposed die attach
paddle (DAP) on the bottom surface of the package. When
soldered to the PCB, the DAP can provide efficient conduction
of heat from the die to the PCB. To achieve optimum package
performance, consideration should be given to the PCB pad
design for both the solder lands and the DAP. For further
information, the user is directed to the Amkor Technology
document, Application Notes for Surface Mount Assembly of
Amkor’s MicroLead Frame (MLF) Packages. This can be
downloaded from the Amkor Technology website.
A safe method of displaying the differential output signal using
a grounded scope is shown in Figure 51. Connect Channel A
probe to the VOUTB terminal post. Connect Channel B probe to
the VOUTA post. Invert Channel B, and add the two channels
together. Most multichannel oscilloscopes have this feature built
in. If you must connect the ground lead of the test instrument
to either of the output signal pins, a power-line isolation
transformer must be used to isolate the instrument ground
from the power supply ground.
SSM2211
Rev. E | Page 21 of 24
OUTLINE DIMENSIONS
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.
COMPLIANT TO JEDEC STANDARDS MS-012-A A
060506-A
0.25 (0.0098)
0.17 (0.0067)
1.27 (0.0500)
0.40 (0.0157)
0.50 (0.0196)
0.25 (0.0099) 45°
8°
0°
1.75 (0.0688)
1.35 (0.0532)
SEATING
PLANE
0.25 (0.0098)
0.10 (0.0040)
4
1
85
5.00 (0.1968)
4.80 (0.1890)
4.00 (0.1574)
3.80 (0.1497)
1.27 (0.0500)
BSC
6.20 (0.2440)
5.80 (0.2284)
0.51 (0.0201)
0.31 (0.0122)
COPLANARITY
0.10
Figure 52. 8-Lead Standard Small Outline Package [SOIC_N]
Narrow Body, S-Suffix
(R-8)
Dimensions shown in millimeters and (inches)
1
0.50
BSC
0.60 MAX PIN 1
INDICATO
1.50
REF
0.50
0.40
0.30
2.75
BSC SQ
TOP
VIEW
12° MAX 0.70 MAX
0.65 TYP
SEATING
PLANE
PIN 1
INDICATOR
0.90 MAX
0.85 NOM
0.30
0.23
0.18
0.05 MAX
0.01 NOM
0.20 REF
1.89
1.74
1.59
4
1.60
1.45
1.30
3.00
BSC SQ
5
8
Figure 53. 8-Lead Lead Frame Chip Scale Package [LFCSP_VD]
3 mm × 3 mm Body, Very Thin, Dual Lead
(CP-8-2)
Dimensions shown in millimeters
SSM2211
Rev. E | Page 22 of 24
ORDERING GUIDE
Model Temperature Range Package Description Package Option Branding
SSM2211CP-R2 –40°C to +85°C 8-Lead LFCSP_VD CP-8-2 B5A
SSM2211CP-REEL –40°C to +85°C 8-Lead LFCSP_VD CP-8-2 B5A
SSM2211CP-REEL7 –40°C to +85°C 8-Lead LFCSP_VD CP-8-2 B5A
SSM2211CPZ-R21–40°C to +85°C 8-Lead LFCSP_VD CP-8-2 B5A#
SSM2211CPZ-REEL1
–40°C to +85°C 8-Lead LFCSP_VD CP-8-2 B5A#
SSM2211CPZ-REEL7 –40°C to +85°C 8-Lead LFCSP_VD CP-8-2 B5A#
SSM2211S –40°C to +85°C 8-Lead SOIC_N R-8 (S-Suffix)
SSM2211S-REEL –40°C to +85°C 8-Lead SOIC_N R-8 (S-Suffix)
SSM2211S-REEL7 –40°C to +85°C 8-Lead SOIC_N R-8 (S-Suffix)
SSM2211SZ1
–40°C to +85°C 8-Lead SOIC_N R-8 (S-Suffix)
SSM2211SZ-REEL1
–40°C to +85°C 8-Lead SOIC_N R-8 (S-Suffix)
SSM2211SZ-REEL71
–40°C to +85°C 8-Lead SOIC_N R-8 (S-Suffix)
SSM2211-EVAL Evaluation Board
SSM2211-EVALZ1
Evaluation Board
1 Z = RoHS Compliant Part; # denotes RoHS compliant product may be top or bottom marked.
SSM2211
Rev. E | Page 23 of 24
NOTES
SSM2211
Rev. E | Page 24 of 24
NOTES
©2008 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D00358-0-4/08(E)